M25P16 VDFPN8
Abstract: M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995
Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features n 16 Mbit of Flash memory n Page Program up to 256 bytes in 0.64 ms (typical) n Sector Erase (512 Kbit) in 0.6 s (typical) n Bulk Erase (16 Mbit) in 13 s (typical) n 2.7 V to 3.6 V single supply voltage
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Original
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M25P16
2015h)
M25P16 VDFPN8
M25P16
A21 SO8
MARKING CODE A21 SO8
Numonyx AN1995
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum
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Original
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M25P64
50MHz
64Mbit
512Kbit)
64Mbit)
2017h)
20-Year
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PDF
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M25P16 VDFPN8
Abstract: MARKING code mf stmicroelectronics VDFPN 8x6 M25P16-V vdfpn8 VDFPN8 package SO8N M25P16 MARKING CODE A21 SO8
Text: M25P16 16 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 17 s (typical)
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Original
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M25P16
2015h)
M25P16 VDFPN8
MARKING code mf stmicroelectronics
VDFPN 8x6
M25P16-V
vdfpn8
VDFPN8 package
SO8N
M25P16
MARKING CODE A21 SO8
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PDF
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VDFPN8
Abstract: No abstract text available
Text: M25P16 16 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 16Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (512 Kbit) ■ Bulk Erase (16Mbit) ■ 2.7 to 3.6V Single Supply Voltage
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Original
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M25P16
50MHz
16Mbit
16Mbit)
2015h)
VDFPN8
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PDF
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VDFPN8 package
Abstract: No abstract text available
Text: M25P32 32-Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode
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Original
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M25P32
32-Mbit,
2016h)
VDFPN8 package
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PDF
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A3 SOT223
Abstract: i-pak Package zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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Original
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
A3 SOT223
i-pak Package zener diode
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE
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Original
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M29DW640D
TSOP48
24Mbit
TFBGA63
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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Original
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M29DW640D
24Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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Original
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M29DW640D
TSOP48
24Mbit
TFBGA63
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PDF
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VDFPN8 package
Abstract: M25P32 SO8w
Text: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode
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Original
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M25P32
32-Mbit,
2016h)
VDFPN8 package
M25P32
SO8w
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PDF
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MLP8 package
Abstract: MLP8 m25p64 PACKAGE MARKING so16-300 MLP8 m25p64 PACKAGE MLP8 m25p64
Text: M25P64 64 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Features 64 Mbit of Flash memory 2.7 V to 3.6 V single supply voltage SPI bus compatible serial interface 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) Page Program (up to 256 Bytes)
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Original
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M25P64
2017h)
20-year
MLP8 package
MLP8 m25p64 PACKAGE MARKING
so16-300
MLP8 m25p64 PACKAGE
MLP8 m25p64
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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Original
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M29DW640D
TSOP48
24Mbit
TFBGA63
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PDF
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vdfpn8
Abstract: VFQFPN8 M25P16 VDFPN8 M25P16 VDFPN SO16-300
Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage
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Original
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M25P16
2015h)
vdfpn8
VFQFPN8
M25P16 VDFPN8
M25P16
VDFPN
SO16-300
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PDF
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24SER
Abstract: No abstract text available
Text: M25P16 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit)
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Original
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M25P16
16Mbit
16Mbit)
50MHz
2015h)
24SER
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PDF
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i-pak Package zener diode
Abstract: STN1NK60Z stn1nk60
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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Original
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
i-pak Package zener diode
STN1NK60Z
stn1nk60
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage
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Original
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M25P16
2015h)
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PDF
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MLP8 m25p64
Abstract: vdfpn8 wip 74 VDFPN 8x6 MLP8 m25p64 PACKAGE M25P64 ST10
Text: M25P64 64Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (64Mbit)
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Original
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M25P64
64Mbit,
64Mbit
512Kbit)
64Mbit)
50MHz
2017h)
20-Year
MLP8 m25p64
vdfpn8
wip 74
VDFPN 8x6
MLP8 m25p64 PACKAGE
M25P64
ST10
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PDF
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1NK60Z
Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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Original
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
OT-223
STQ1NK60ZR
1NK60Z
STN1NK60Z
1Nk60
JESD97
STD1LNK60Z-1
STQ1NK60ZR-AP
mosfet 600V 100A ST
std1lnk60z
Marking STMicroelectronics zener diode
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PDF
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1Nk60
Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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Original
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STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
1Nk60
1NK60Z
1nk60zr
JESD97
STD1LNK60Z-1
STN1NK60Z
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PDF
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MLP8
Abstract: M25P16 M25P16 VDFPN8
Text: Numonyx Forté Serial Flash Memory M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features 16 Mbit of Flash memory Page Program up to 256 bytes in 0.64 ms (typical) VFDFPN8 (MP) 6 x 5 mm (MLP8) Sector Erase (512 Kbit) in 0.6 s (typical)
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Original
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M25P16
2015h)
MLP8
M25P16
M25P16 VDFPN8
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PDF
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A11-A21
Abstract: A0-A21 M29DW640D M29DW640DB 3A800
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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Original
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M29DW640D
TSOP48
24Mbit
TFBGA63
A11-A21
A0-A21
M29DW640D
M29DW640DB
3A800
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PDF
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VDFPN 8x6
Abstract: 8x6mm M25P32 ST10 mlp 8x6
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)
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Original
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
VDFPN 8x6
8x6mm
M25P32
ST10
mlp 8x6
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PDF
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MIL-T-10727
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST FT R E V IS IO N S LTR F1 1.65 [.065] WHEN TINES ARE COMPRESSED TO 0 .25[.010] FROM BODY DESCRIPTION REV PER ECO—05—13552 DATE
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OCR Scan
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MIN50
15MAY2003
16MAY03
31MAR2000
MIL-T-10727
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PDF
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