15w mosfet power amplifier
Abstract: THV15 Richardson Electronics thv15 15W-class all mosfet vhf power amplifier mosfet vhf power amplifier "2-30 mhz"
Text: THV15 15W Class A VHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear transistor and mosfet with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THV15
40W267
15w mosfet power amplifier
THV15
Richardson Electronics thv15
15W-class
all mosfet vhf power amplifier
mosfet vhf power amplifier
"2-30 mhz"
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PH0810-15
Abstract: No abstract text available
Text: PH0810-15 Wireless Power Transistor 15W, 850-960MHz, 26V Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting
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PH0810-15
850-960MHz,
PH0810-15
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2212 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • 960-1215 MHz GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 15W Gp = 8.1 dB MINIMUM
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MS2212
MS2212
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MS2212
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2212 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • 960-1215 MHz GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 15W Gp = 8.1 dB MINIMUM
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MS2212
MS2212
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Untitled
Abstract: No abstract text available
Text: This document was generated on 09/10/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 130108-0083 Active Super-Safeway 15W Fluorescent Hand Lamp With Handle Ballast Location and Switch, Cord Type 18/3 SJTW, Cord Length 15.24m 50.0'
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LR85374
E59049
130108Series
F15/T8
120VAC
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2212 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • 960-1215 MHz GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 15W Gp = 8.1 dB MINIMUM
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MS2212
MS2212
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POE-15
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Text: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP
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PH1819-15N
POE-15
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
18801
PH1819-15N
bipolar power transistor
wacom
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transistor j127
Abstract: PH1090-15L
Text: PH1090-15L Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-15L
transistor j127
PH1090-15L
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PH1819-15N
Abstract: No abstract text available
Text: PH1819-15N Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • • NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 15 W PEP
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PH1819-15N
PH1819-15N
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Untitled
Abstract: No abstract text available
Text: PH1090-15L Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH1090-15L
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THV15-V2
Abstract: 15w mosfet power amplifier CROMA MS1277 mosfet vhf power amplifier
Text: THV15-V2 15 W Class A VHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear transistor and mosfet whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THV15-V2
MS1277
GR00001
THV15-V2
15w mosfet power amplifier
CROMA
mosfet vhf power amplifier
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Erie feedthrough
Abstract: erie capacitor Electrolytic Capacitor 50v ERIE ceramic capacitor AM1011-070 AM1011-70 S042 FEEDTHRU capacitor ceramic capacitor 4.7 mf 50v
Text: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN
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AM1011-070
AM1011-70
AM1011-070
Erie feedthrough
erie capacitor
Electrolytic Capacitor 50v
ERIE ceramic capacitor
AM1011-70
S042
FEEDTHRU capacitor
ceramic capacitor 4.7 mf 50v
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ERIE ceramic capacitor
Abstract: erie capacitor AM1011-070 AM1011-70 S042 Erie feedthrough
Text: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 70 W MIN. WITH 6.7 dB GAIN
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AM1011-070
AM1011-70
AM1011-070
ERIE ceramic capacitor
erie capacitor
AM1011-70
S042
Erie feedthrough
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AM83135-050
Abstract: No abstract text available
Text: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM83135-050
AM83135-050
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erie feedthrough capacitors
Abstract: ERIE ceramic capacitor variable capacitor erie capacitor ERIE ceramic thomson capacitor AM80912-085 S042 CAPACITOR 1500 Erie feedthrough
Text: AM80912-085 . . . . RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN
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AM80912-085
AM80912-085
erie feedthrough capacitors
ERIE ceramic capacitor
variable capacitor
erie capacitor
ERIE ceramic
thomson capacitor
S042
CAPACITOR 1500
Erie feedthrough
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all mosfet vhf power amplifier
Abstract: MS1277 GR00001 15w mosfet power amplifier THV15-V2
Text: THV15-V2-R 15 W Class A VHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear transistor and mosfet whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.
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THV15-V2-R
MS1277
GR00001
all mosfet vhf power amplifier
GR00001
15w mosfet power amplifier
THV15-V2
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40w electronic ballast
Abstract: Electronic ballast 40W Electronic ballast 58W electronic ballast 36W SL-EB136 SL-EB236 SL-EB240 SL-EB140 electronic ballast 18w BALLAST 58W
Text: SPEC LIN Electronic Ballast Enterprise Co.,Ltd. Double Output series of Electronic Ballast Technical Characteristics Te c h n i c a l C h a r a c t e r i s t i c s Power Factor >0.90 Low total harmonic distortion Lumen Factor >0.95 High reliability,life-time >20000 hours
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SL-EB214
50Hz/60Hz
SL-EB215
SL-EB218
SL-EB221
SL-EB114
SL-EB115
40w electronic ballast
Electronic ballast 40W
Electronic ballast 58W
electronic ballast 36W
SL-EB136
SL-EB236
SL-EB240
SL-EB140
electronic ballast 18w
BALLAST 58W
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S0151
Abstract: No abstract text available
Text: am im m R F P ro du cts M ic m s e m m 140 Commerce Drive Montgomeryviile. PA 18936-1013 Tel: {215 631-9840 i pfO§f8£s> S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W T Y P IC A L C W 15W TYPICAL PULSED GOLD METALLIZATION m
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SD1511-8
s45/e
S0151
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP
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PH1819-15N
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12W92
Abstract: 4.25mhz s0151 25CC M105 SD1511-08 SD1511-8 sd1151 SD11511-8 12w 92
Text: M í ^Products M l l f f / v f j-im -i r - S f Jl P rog resa P o w ered b y T e c h no log y 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W TYPICAL CW 15W TYPICAL PULSED
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PA18936-1013
SD1511-8
SD1511-08
SD11511-8
S88SD1S11
425MHz
SB8S01S1VB
S88SD1511-8-0?
12W92
4.25mhz
s0151
25CC
M105
SD1511-8
sd1151
SD11511-8
12w 92
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PH0810-15
Abstract: No abstract text available
Text: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration
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-30dBc
PH0810-15
PH0810-15
10T/NO.
1N4245)
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RZ3135B15W
Abstract: RZ3135B30W
Text: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich
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RZ3135B15W
RZ3135B30W
RZ3135B30W
7Z88S11
RZ3135B15W
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sgs RF NPN POWER TRANSISTOR 3 GHZ
Abstract: m1416 AM1416-100 M14-16
Text: r= 7 S G S - T H O M S O N ^ 7#. M ia© g[L i@ T M []igS _ A M 1 4 1 6 -1 0 0 RF & MICROWAVE TRANSISTORS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED i LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY
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AM1416-100
AM1416-100
sgs RF NPN POWER TRANSISTOR 3 GHZ
m1416
M14-16
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-mOMSON A M80912-085 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTO RY/G OLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T MATCHING OVERLAY GEOM ETRY METAL/CERAMIC H ERM ETIC PACKAGE
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M80912-085
AM80912-085
13214F
J2CI237
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