Untitled
Abstract: No abstract text available
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
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pc28f00ap30
Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F512P30
PC28F00AP30TF
pc28f00ap
PC28F512P30BF
PC28F00BP30EF
pc28f00ap30ef
PC28F00AP30BF
JS28F512P30BF
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pc28f00ap30
Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F00AP30TF
PC28F00AP30EF
PC28F512P30
JS28F512
PC28F512P30TF
JS28F512P30BF
pc28f00ap30bf
PC28F00BP30
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16G nand
Abstract: No abstract text available
Text: NANDxxGW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High density NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage applications ■
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16-Gbit,
4224-byte
16G nand
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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NAND08GW3F2A
Abstract: NAND08GW3F nand16gw3
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
NAND08GW3F
nand16gw3
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NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
transistor sr61
NAND08GW3F
NAND16GW3F2A
A20-A32
transistor SR60
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LGA52
Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
16gb
8Gb 64 gbit nand flash
NAND16GW3C4A
TSOP48 outline
16G nand
16G nand flash
NS4258
IBIS Models
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2B
NAND16GW3C4B
TSOP48
LGA52
LGA-52
ULGA52
nand 16g
16G nand flash
NAND08GW3C2B
NAND16GW3
NAND16GW3C4A
NAND16GW3C4B
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16G nand
Abstract: No abstract text available
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
16-Gbit
16G nand
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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Untitled
Abstract: No abstract text available
Text: TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
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TH58NVG4S0FTA20
TH58NVG4S0F
4328-byte
2011-07-01C
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NAND32G
Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
NAND32G
32-Gbit
nand32
NAND32GW3D4A
JESD97
NAND16GW3D2A
package tsop48
16 GBit flash
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TH58NVG*D
Abstract: No abstract text available
Text: TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
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TH58NVG4S0FBAID
TH58NVG4S0FBAID
4328-byte
2013-01-31C
TH58NVG*D
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Numonyx
Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications
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NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Byte/264
Numonyx
NAND01GWxA2B-KGD
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
AI07587
NAND01G
AI13144
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Untitled
Abstract: No abstract text available
Text: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
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TH58NYG4S0FBAID
TH58NYG4S0F
4328-byte
2014-03-12C
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Untitled
Abstract: No abstract text available
Text: TH58NVG4S0FTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
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TH58NVG4S0FTAK0
TH58NVG4S0F
4328-byte
2011-07-01C
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NAND16GW3D2A
Abstract: numonyx MLC NAND32GW3D4A
Text: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage
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32-Gbit,
4224-byte
NAND16GW3D2A
numonyx MLC
NAND32GW3D4A
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PC28F00AP30TF
Abstract: PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30
Text: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode
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P30-65nm
512-Mbit,
100ns
110ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
PC28F00AP30TF
PC28F00BP30EF
PC28F512P30BF
JS28F512P30
JS28F512
PC28F00AP30BF
PC28F00AP30EF
JS28F00AP30BF
Numonyx P30
PC28F512P30
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JS28F512P33BF
Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
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P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-ing
JS28F512P33BF
JS28F512
pc28f00ap33
PC28F00AP33BF
truth table NOT gate 74
JS28F512P33TF
PC28F00AP33TF
JS28F512P33EF
PC28F00BP33EF
JS28F00AP33BF
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Untitled
Abstract: No abstract text available
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
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P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-KByte
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NUMONYX DDR
Abstract: NAND16GW3D2B
Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications
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NAND16GW3D2B
16-Gbit,
4320-byte
NUMONYX DDR
NAND16GW3D2B
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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