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    16-BIT SYNCHRONOUS COUNTER Search Results

    16-BIT SYNCHRONOUS COUNTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54S163J/B Rochester Electronics LLC 54S163 - Synchronous 4-Bit Counters Visit Rochester Electronics LLC Buy
    54F191/QFA Rochester Electronics LLC BINARY COUNTER; 4-BIT SYNCHRONOUS UP/DOWN; PRESETTABLE Visit Rochester Electronics LLC Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet

    16-BIT SYNCHRONOUS COUNTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A43L4616

    Abstract: RA12
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


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    PDF A43L4616 143MHz 133Mhz A43L4616 RA12

    Untitled

    Abstract: No abstract text available
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


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    PDF A43L4616 143MHz

    A43L4616AV-7F

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


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    PDF A43L4616A/A43L5608A 133MHz 100MHz A43L4616AV-7F

    A43L4616AV

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


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    PDF A43L4616A/A43L5608A A43L4616AV

    F9901

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F9901

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-10 CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F641642D-75/-102/-10 576-Word MB81F641642D 16-bit

    Untitled

    Abstract: No abstract text available
    Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version :  2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


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    PDF FEDD56V16160F-01 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms

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    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F161622C-60/-70/-80/-80L 288-Word MB81F161622C 16-bit

    MB81F161622B-10

    Abstract: MB81F161622B-102 MB81F161622B-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CMOS 2 Banks of 524,288 × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF DS05-11039-1E MB81F161622B-75/-102/-10 MB81F161622B 16-bit F9711 MP-SDRAM-DS-20638-12/97 MB81F161622B-10 MB81F161622B-102 MB81F161622B-75

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F641642D-75/-102/-102L 576-Word MB81F641642D 16-bit

    MSM56V16160F

    Abstract: active suspension
    Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


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    PDF FEDD56V16160F-02 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms active suspension

    CTRDIV16

    Abstract: UT54ACS163 UT54ACTS163
    Text: UT54ACS163/UT54ACTS163 Radiation-Hardened 4-Bit Synchronous Counters FEATURES PINOUTS 16-Pin DIP Top View Internal look-ahead for fast counting Carry output for n-bit cascading Synchronous counting Synchronously programmable radiation-hardened CMOS - Latchup immune


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    PDF UT54ACS163/UT54ACTS163 16-Pin 16-lead UT54ACS163 UT54ACTS163 CTRDIV16

    Untitled

    Abstract: No abstract text available
    Text: KM716V689 64Kx16 Synchronous SRAM 64K X 16-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM716V689 is a 1,048,576-bit Synchronous Static • 2 Stage Pipelined operation with 4 Burst Random • On-Chip Address Counter.


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    PDF KM716V689 64Kx16 16-Bit KM716V689 576-bit i486/Pentium 0D2401S

    F641642C

    Abstract: f64164
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access,Memory SDRAM containing


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    PDF MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit F641642C f64164

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F641642B-103E/-103/-10/-103L/-1OL 576-Word MB81F641642B 16-bit MB81F641642B-103E/-103/-10/-103L/-1 54-pin FPT-54P-M02)

    1N15

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit F9802 1N15

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit 54-pin FPT-54P-M02)

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF MB81F161622B-75/-102/-10 MB81F161622B 16-bit 50-pin FPT-50P-M05) F50005S-2C-1

    82c51

    Abstract: 82C51A marking SAB 82C51AM 82c51ap
    Text: SAB 82C51A Programmable Communications Interface Synchronous and asynchronous operation Synchronous 5-bit to 8-bit characters; internal or external character synchronization; automatic syn c insertion A synchronous 5-bit to 8-bit characters; clock rate 1, 16 or 64 tim es baud rate; break character


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    PDF 82C51A 28-pin P-DIP-28 82C51A 82C51A-P Q67120-P216 82c51 marking SAB 82C51AM 82c51ap

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-1Û0/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811641642A is a CMOS Synchronous Dynamic RandomiiAccess Memory SDRAM containing


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    PDF MB811641642A-1 0/-84/-67/-100L/-84L/-67L 576-Word MB811641642A 16-bit B811641642A D-63303 F9802

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF B81F641642B-103E/-103/-10/-103L/-1OL 576-Word MB81F641642B 16-bit F641642B D-63303 F9801

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    PDF MB81F161622B-60/-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05) F50005S-2C-1

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-103 CM OS 2-Bank x 524,288-W ord x 16 Bit Synchronous Dynam ic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AGcess:;Memory SDRAM containing


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    PDF MB81F161622B-75/-102/-103 MB81F161622B 16-bit 61622B TheiMB81 F161622B D-63303 F9712

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET A E 5E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit ; Synchronous Dynamic Random Access Memiôiry DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AccessiMemory SDRAM containing


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    PDF MB81F161622B-70/-80 288-Word MB81F161622B 16-bit F161622B 50-pin FPT-50P-M05)