A43L4616
Abstract: RA12
Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM
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A43L4616
143MHz
133Mhz
A43L4616
RA12
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Untitled
Abstract: No abstract text available
Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM
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A43L4616
143MHz
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A43L4616AV-7F
Abstract: No abstract text available
Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary
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A43L4616A/A43L5608A
133MHz
100MHz
A43L4616AV-7F
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A43L4616AV
Abstract: No abstract text available
Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary
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A43L4616A/A43L5608A
A43L4616AV
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F9901
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F161622B-60/-70/-80
288-Word
MB81F161622B
16-bit
F9901
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-10 CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642D-75/-102/-10
576-Word
MB81F641642D
16-bit
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Untitled
Abstract: No abstract text available
Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version : 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-01
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622C-60/-70/-80/-80L CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F161622C-60/-70/-80/-80L
288-Word
MB81F161622C
16-bit
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MB81F161622B-10
Abstract: MB81F161622B-102 MB81F161622B-75
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-1E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CMOS 2 Banks of 524,288 × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11039-1E
MB81F161622B-75/-102/-10
MB81F161622B
16-bit
F9711
MP-SDRAM-DS-20638-12/97
MB81F161622B-10
MB81F161622B-102
MB81F161622B-75
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642D-75/-102/-102L
576-Word
MB81F641642D
16-bit
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MSM56V16160F
Abstract: active suspension
Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-02
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
active suspension
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CTRDIV16
Abstract: UT54ACS163 UT54ACTS163
Text: UT54ACS163/UT54ACTS163 Radiation-Hardened 4-Bit Synchronous Counters FEATURES PINOUTS 16-Pin DIP Top View Internal look-ahead for fast counting Carry output for n-bit cascading Synchronous counting Synchronously programmable radiation-hardened CMOS - Latchup immune
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UT54ACS163/UT54ACTS163
16-Pin
16-lead
UT54ACS163
UT54ACTS163
CTRDIV16
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Untitled
Abstract: No abstract text available
Text: KM716V689 64Kx16 Synchronous SRAM 64K X 16-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM716V689 is a 1,048,576-bit Synchronous Static • 2 Stage Pipelined operation with 4 Burst Random • On-Chip Address Counter.
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KM716V689
64Kx16
16-Bit
KM716V689
576-bit
i486/Pentium
0D2401S
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F641642C
Abstract: f64164
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access,Memory SDRAM containing
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
F641642C
f64164
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
MB81F641642B-103E/-103/-10/-103L/-1
54-pin
FPT-54P-M02)
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1N15
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
F9802
1N15
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
54-pin
FPT-54P-M02)
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F161622B-75/-102/-10
MB81F161622B
16-bit
50-pin
FPT-50P-M05)
F50005S-2C-1
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82c51
Abstract: 82C51A marking SAB 82C51AM 82c51ap
Text: SAB 82C51A Programmable Communications Interface Synchronous and asynchronous operation Synchronous 5-bit to 8-bit characters; internal or external character synchronization; automatic syn c insertion A synchronous 5-bit to 8-bit characters; clock rate 1, 16 or 64 tim es baud rate; break character
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82C51A
28-pin
P-DIP-28
82C51A
82C51A-P
Q67120-P216
82c51
marking SAB
82C51AM
82c51ap
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-1Û0/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811641642A is a CMOS Synchronous Dynamic RandomiiAccess Memory SDRAM containing
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MB811641642A-1
0/-84/-67/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
B811641642A
D-63303
F9802
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM M B81F641642B-103E/-103/-10/-103L/-1OL CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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B81F641642B-103E/-103/-10/-103L/-1OL
576-Word
MB81F641642B
16-bit
F641642B
D-63303
F9801
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F161622B-60/-70/-80
288-Word
MB81F161622B
16-bit
F161622B
50-pin
FPT-50P-M05)
F50005S-2C-1
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-103 CM OS 2-Bank x 524,288-W ord x 16 Bit Synchronous Dynam ic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AGcess:;Memory SDRAM containing
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MB81F161622B-75/-102/-103
MB81F161622B
16-bit
61622B
TheiMB81
F161622B
D-63303
F9712
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET A E 5E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit ; Synchronous Dynamic Random Access Memiôiry DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random AccessiMemory SDRAM containing
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MB81F161622B-70/-80
288-Word
MB81F161622B
16-bit
F161622B
50-pin
FPT-50P-M05)
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