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    1606 MOSFET Search Results

    1606 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1606 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode gp 946

    Abstract: schematic diagram PWM 12V 30a mosfet low vgs MOSFET and parallel Schottky diode parallel mosfet ANP20 GS 069 Power MOSfETs Portable applications Select schematic diagram converter 12v to 24v 30a BAT54WS T/R mosfet driver 5v to 30v
    Text: Solved by APPLICATION NOTE ANP20 TM Properly Sizing MOSFETs for PWM Controllers Fundamentals of Properly Sizing MOSFETs for Synchronous Buck Controllers and Their Effects on Efficiency INTRODUCTION Today’s electronic designs are focusing more on optimizing efficiency in an


    Original     		PDF ANP20 CA95035 diode gp 946 schematic diagram PWM 12V 30a mosfet low vgs MOSFET and parallel Schottky diode parallel mosfet ANP20 GS 069 Power MOSfETs Portable applications Select schematic diagram converter 12v to 24v 30a BAT54WS T/R mosfet driver 5v to 30v

    smd code c9f

    Abstract: H2 SOT-89 RF amplifier smd c7f C2f SOT-89 GRM1885C1H3R9CZ01 smd c8f H2 SOT-89 amplifier GRM1885C1H3R3CZ01 PD84001 smd c2f
    Text: STEVAL-TDR006V1 2 stage RF power amp: PD84001 + PD84008L-E + LPF N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.4 A ■ Input power < 10 dBm


    Original     		PDF STEVAL-TDR006V1 PD84001 PD84008L-E STEVAL-TDR006V1 smd code c9f H2 SOT-89 RF amplifier smd c7f C2f SOT-89 GRM1885C1H3R9CZ01 smd c8f H2 SOT-89 amplifier GRM1885C1H3R3CZ01 PD84001 smd c2f

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N03-04 S-71520Rev. 13-Aug-07

    SUB75N03-04

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ Ω rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF SUP/SUB75N03-04 05-Mar-98 SUB75N03-04

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N03-04

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N03-04 18-Jul-08

    SKY85703

    Abstract: SKY77758
    Text: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7


    Original     		PDF BRO399-14B SKY85703 SKY77758

    max 628 application sheet buck boost converter

    Abstract: SPICE QT 60 CIRCUIT DIAGRAMS SP6133 BUSSMANN MAX-40 QFN 8 CARSEM schematic diagram converter 12v to 24v 30a SD101AWS Si4320DY Si4394DY Si7214DN
    Text: SP6138 Solved by TM UV IN V IN BST 16 15 14 13 12 GH 1 SP6138 2 16 Pin QFN 3mm x 3mm 3 7 11 SWN 10 ISP 9 ISN 8 SS 6 PWRGD 5 EN 4 COMP FEATURES • 5V to 24V Input step down converter ■ Up to 3A output in a small form factor GL ■ Highly integrated design, minimal components


    Original     		PDF SP6138 16-Pin SP6133 MIL-STD-883E 100pF EIAJ-ED-17. 100mA max 628 application sheet buck boost converter SPICE QT 60 CIRCUIT DIAGRAMS BUSSMANN MAX-40 QFN 8 CARSEM schematic diagram converter 12v to 24v 30a SD101AWS Si4320DY Si4394DY Si7214DN

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 515D107M050BB6A

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi

    MRF6S9125N

    Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 MRF6S9125N CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 PCN12895

    RSN 3305

    Abstract: schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter SP6133 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM
    Text: SP6133 Solved by TM 2 GND 3 VFB 4 UV IN V IN BST 13 12 GH SP6133 16 Pin QFN 3mm x 3mm 5 6 7 11 SWN 10 ISP 9 ISN 8 SS PGND 14 PWRGD 1 15 EN GL 16 COMP FEATURES • 5V to 24V Input step down converter ■ Up to 30A output capability ■ Highly integrated design, minimal components


    Original     		PDF SP6133 16-Pin SP6133 MIL-STD-883E 100pF EIAJ-ED-17. 100mA RSN 3305 schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM

    GSM ic

    Abstract: BC857LT1 "GSM IC" Taiyo Yuden Duplexer capacitor 0603-NPO Duplexer 15 ghz MRFIC1818 0B8 diode zener Signal Path designer AN1602
    Text: MOTOROLA Order this document by AN1602/D SEMICONDUCTOR APPLICATION NOTE AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual-Band PA Application with DECT Capability Using Standard Motorola RFIC's Prepared by: Gilles Montoriol, Christophe Fourtet, Dominique Brunel, Jean Baptiste Verdier and Jacques Trichet


    Original     		PDF AN1602/D AN1602 GSM/DCS1800 MRFIC0913 MRFIC1818 DCS1800. MC33169 MMSF4N01HD GSM ic BC857LT1 "GSM IC" Taiyo Yuden Duplexer capacitor 0603-NPO Duplexer 15 ghz 0B8 diode zener Signal Path designer AN1602

    SCHEMATIC 5kw power supply 30A

    Abstract: schematic diagram converter input 12v to 24v 4a PowerPAK 1212-8 package, moisture sensitivity level mosfet ms 1307 SI2318 compensator for cuk converter CdS 18-50 kohm schematic diagram converter 12v to 24v 30a 10ME220SWG BAT54WS T/R
    Text: SP6136 VCC UV VI N BST 16 15 14 13 12 GH 1 SP6136 2 16 Pin QFN 3mm x 3mm 3 6 7 PWRGD 11 SWN 10 ISP 9 ISN 8 SS 5 EN 4 COM P FEATURES • 5V to 24V Input step down converter ■ Up to 7A output in a small form factor ■ Highly integrated design, minimal components


    Original     		PDF SP6136 16-Pin SP6133 MIL-STD-883E 100pF EIAJ-ED-17. 100mA SCHEMATIC 5kw power supply 30A schematic diagram converter input 12v to 24v 4a PowerPAK 1212-8 package, moisture sensitivity level mosfet ms 1307 SI2318 compensator for cuk converter CdS 18-50 kohm schematic diagram converter 12v to 24v 30a 10ME220SWG BAT54WS T/R

    MRFIC1817

    Abstract: "GSM IC" GSM ic AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0913 MRFIC0917 MRFIC1818
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1602/D SEMICONDUCTOR APPLICATION NOTE ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual-Band PA Application with DECT Capability Using Standard Motorola RFIC's


    Original     		PDF AN1602/D AN1602 GSM/DCS1800 MRFIC0913 MRFIC1818 DCS1800. MC33169 MMSF4N01HD MRFIC1817 "GSM IC" GSM ic AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0917

    smd c8f

    Abstract: GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E
    Text: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		PDF AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 AB-54003L-51and smd c8f GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E

    GRM1885C1H3R9CZ01

    Abstract: A1 AMP RF SOT89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E PD84001 SMD CODE vapc
    Text: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm


    Original     		PDF STEVAL-TDR001V1 PD84001 PD54003L-E STEVAL-TDR001V1 GRM1885C1H3R9CZ01 A1 AMP RF SOT89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E PD84001 SMD CODE vapc

    smd c8f

    Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
    Text: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm


    Original     		PDF STEVAL-TDR001V1 PD84001 PD54003L-E STEVAL-TDR001V1 smd c8f A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP

    "GSM IC"

    Abstract: AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0913 MRFIC0917 MRFIC1817 MRFIC1818 27dBmOutput
    Text: Order this document by AN1602/D AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual-Band PA Application with DECT Capability Using Standard Motorola RFIC's Prepared by: Gilles Montoriol, Christophe Fourtet, Dominique Brunel, Jean Baptiste Verdier and Jacques Trichet Wireless Subscriber Group, RF Semiconductor Division. Motorola Semiconductor S. A.


    Original     		PDF AN1602/D AN1602 GSM/DCS1800 MRFIC0913 MRFIC1818 DCS1800. MC33169 MMSF4N01HD RFAN1602/D "GSM IC" AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0917 MRFIC1817 27dBmOutput

    C2f SOT-89

    Abstract: AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603
    Text: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		PDF AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 C2f SOT-89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603

    smd transistor marking y2

    Abstract: catalog mosfet Transistor smd HERMETIC SMD OPTOCOUPLERS military optocoupler 8 channel optocouplers smd INCOMING INSPECTION procedure smd transistor marking hp
    Text: H Hermetic and Hi-Rel Optocouplers Data Sheet Index . 1-492 Product Selection Guide . 1-493 Applications . 1-606 1-489 1-489 Hermetic and Hi-Rel Optocouplers For Military, Space, Life


    Original     		PDF QML-38534. smd transistor marking y2 catalog mosfet Transistor smd HERMETIC SMD OPTOCOUPLERS military optocoupler 8 channel optocouplers smd INCOMING INSPECTION procedure smd transistor marking hp

    ATC 1084

    Abstract: pte10011
    Text: ERICSSON $ PTE 10011* 6 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF IEC-68-2-54 Std-002-A Po200 P4917-ND P5276 G-200 ATC 1084 pte10011

    Untitled

    Abstract: No abstract text available
    Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM


    OCR Scan     		PDF cr122 340F-03 O-247) O-251)