Untitled
Abstract: No abstract text available
Text: PcRam Description TS32MLE72V6K Dimensions The TS32MLE72V6K is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6K A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit
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TS32MLE72V6K
TS32MLE72V6K
36pcs
16Mx4
16bits
168-pin
432-word
72-bit
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Untitled
Abstract: No abstract text available
Text: PcRam Description TS32MLE72V6Y Dimensions The TS32MLE72V6Y is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit
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TS32MLE72V6Y
TS32MLE72V6Y
36pcs
16Mx4
16bits
168-pin
432-word
72-bit
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Untitled
Abstract: No abstract text available
Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory
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TS16MLE72V6W
TS16MLE72V6W
18pcs
16bits
168-pin
216-word
72-bit
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IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
IS42RM16160E
IS42VM16160E-75BLI
IS42VM16160E
is42vm16160
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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HY5V66EF6P
Abstract: HY5V66EF6
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 History Initial Draft Draft Date Remark Dec. 2004 Preliminary June. 2005 Preliminary 1. Editorial chage 0.80Typ -> 0.45 +/-0.05 page12, Ball Dimension
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16bits
80Typ
page12,
100MHz
11Preliminary
A10/AP
64Mbit
4Mx16bit)
HY5V66E
HY5V66EF6P
HY5V66EF6
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HY57V281620A
Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
HY57V281620ALT-HI
HY57V281620ALT-KI
HY57V281620ALT-PI
HY57V281620ALT-SI
HY57V281620AT-HI
HY57V281620AT-KI
HY57V281620AT-PI
HY57V281620AT-SI
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TC58DAM72A1FT00
Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58DVM72A1FT00/
TC58DVM72F1FT00
TC58DAM72A1FT00/
TC58DAM72F1FT00
128-MBIT
16BITS)
TC58DxM72x1xxxx
bytes/264
528-byte/264-words
TC58DAM72A1FT00
TC58DVM72A1FT00
TC58DAM72F1FT00
TC58DVM72F1FT00
TC58DAM72A1X
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IS42SM16800F-75BLI
Abstract: IS42SM16800F
Text: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are
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IS42SM16800F
16Bits
IS42SM16800F
-40oC
8Mx16
IS42SM16800F-75BLI
54-ball
IS42SM16800F-75BLI
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PDF
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HY57W2A1620HCT
Abstract: No abstract text available
Text: HY5W2A6C L/S F-F / HY57W2A1620HC(L/S)T-F HY5W26CF-F / HY57W281620HCT-F 4Banks x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 0.3 1. Datasheet separation (Normal & Low Power) 2. Page2 ~ Page23 : Part Number Change HY5W26CF -> HY5W2A6CF
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HY57W2A1620HC
HY5W26CF-F
HY57W281620HCT-F
16bits
Page23
HY5W26CF
HY57W281620HCT
HY57W2A1620HCT
Page18
Page24
HY57W2A1620HCT
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Untitled
Abstract: No abstract text available
Text: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N128D1618LPAW
16Bits
N128D1618LPAW
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Untitled
Abstract: No abstract text available
Text: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
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HY57Y281620HC
Abstract: HY57Y281620HCLT-H
Text: HY57Y281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57Y281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57Y281620HC(L)T is organized as 4banks of 2,097,152x16
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HY57Y281620HC
16bits
728bit
152x16
400mil
54pin
HY57Y281620HCLT-H
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AK4516A
Abstract: sound level meter VSOP 28 441K
Text: DIGITAL AUDIO PRODUCTS DIGITAL AUDIO and MULTIMEDIA SOUND CODECs AK4563A 28-pin VSOP 5.6 x 9.8 × 1.2 mm Low Power 16-Bit 4ch ADC & 2ch DAC with ALC ( 1 ) Resolution: 16bits ( 2 ) Recording Functions • 4ch Analog Input PGA (Programmable Gain Amplifier)
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AK4563A
28-pin
16-Bit
16bits
48kHz)
AK4516A
16bit
sound level meter
VSOP 28
441K
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HY57V281620HCT-HI
Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Text: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
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HY57V281620HC
16bits
728bit
152x16
400mil
54pin
HY57V281620HCT-HI
HY57V281620HCT-6I
HY57V281620HCT-7I
HY57V281620HCT-8I
HY57V281620HCT-KI
HY57V281620HCT-PI
HY57V281620HCT-SI
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TC58DVM82A1FT00
Abstract: TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00
Text: TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS/16M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM82x1xxxx is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58DVM82A1FT00/
TC58DVM82F1FT00
TC58DAM82A1FT00/
TC58DAM82F1FT00
256-MBIT
BITS/16M
16BITS)
TC58DxM82x1xxxx
bytes/264
TC58DVM82A1FT00
TC58DAM82A1FT00
TC58DAM82F1FT00
TC58DVM82F1FT00
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46LR16640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
IS43LR16640A-5BL
IS43LR16640A-6BL
60-ball
-40oC
64Mx16
46LR16640A
Mobile DDR SDRAM
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46LR16320C
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16320C
16Bits
IS43/46LR16320C
16-bit
-40oC
32Mx16
IS43LR16320C-5BLI
IS43LR16320C-6BLI
60-ball
46LR16320C
Mobile DDR SDRAM
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Untitled
Abstract: No abstract text available
Text: N128D1633LPAG2 Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1633LPAG2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N128D1633LPAG2
16Bits
N128D1633LPAG2
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Untitled
Abstract: No abstract text available
Text: IS42RM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are
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IS42RM16800F
16Bits
IS42RM16800F
54Ball
-25oC
8Mx16
IS42RM16800F-6BLE
IS42RM16800F-75BLE
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PDF
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Untitled
Abstract: No abstract text available
Text: IS42VM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are
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IS42VM16800F
16Bits
IS42VM16800F
54Ball
-25oC
8Mx16
IS42VM16800F-75BLE
IS42VM16800F-10BLE
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PDF
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Untitled
Abstract: No abstract text available
Text: SH67L17 24K 4-bit Micro-controller with LCD Driver Features SH6610D-based single-chip 4-bit micro-controller with LCD driver ROM: 24K X 16bits RAM: 4136 X 4 bits - 43 System Control Register - 4093 Data memory - 180 LCD RAM Operation Voltage: 1.2V - 1.7V Typical 1.5V
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SH67L17
SH6610D-based
16bits
768kHz
131kHz
500kHz
Opera-440
SEG54
SEG24
SEG55
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HY5S5A6
Abstract: No abstract text available
Text: Preliminary HY5S5A6D L/S F(P)-xE 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.
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16bits
456bit
304x16.
0mmx13
40BSC
HY5S5A6
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Untitled
Abstract: No abstract text available
Text: Preliminary Rev. 0.0 ,„ c . „ LG Semicon Co.,Ltd. Description The GMM2735233CTG is a 4M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 5 pieces o f 4M x 16bits Synchronous DRAMs in 54 pin TSOP I! package and one 2048 bit EEPROM in 8pin TSSOP
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GMM2735233CTG
72bits
16bits
2735233CTG
2735233CTG
GMM2735233CTG
x64bit
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