GT20J311
Abstract: No abstract text available
Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT20J311
2-16H1A
GT20J311
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Untitled
Abstract: No abstract text available
Text: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT30J311
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Kodak TDI
Abstract: Nippon capacitors MCM20006IC high frequency linear cmos IMAGE SENSOR stepper motor philips ID 35 Color Filter Array CFA
Text: MOTOROLA Order this document by MCM20006 SEMICONDUCTOR TECHNICAL DATA MCM20006 Advance Information ImageMOS Advanced Tri-linear CMOS Image Sensor Plus Image Capture Processing Engine RGB/Monochrome Sensor with Triple DPGA/ADC Features Features: • • •
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MCM20006
10-bit,
Kodak TDI
Nippon capacitors
MCM20006IC
high frequency linear cmos IMAGE SENSOR
stepper motor philips ID 35
Color Filter Array CFA
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Untitled
Abstract: No abstract text available
Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT20J311
2-16H1A
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GT20J311
Abstract: No abstract text available
Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT20J311
GT20J311
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GT10J311
Abstract: No abstract text available
Text: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT10J311
GT10J311
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GT30J311
Abstract: No abstract text available
Text: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT30J311
2-16H1A
GT30J311
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Untitled
Abstract: No abstract text available
Text: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT10J311
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ana 608
Abstract: SDA9388 EIA-744 HFP2 vga Picture-in-Picture Processor EIA-608 SDA9489X v-chip
Text: PRELIMINARY DATA SHEET SDA 9389X PIP III Plus Digital Picture-in-Picture Processor Edition March 23, 2001 6251-550-1PD Digital Picture-in-Picture PIP Processor PIP IIIplus SDA 9389X Version 1.04 CMOS General Description: SDA 9389X is a single chip Picture-in-Picture
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9389X
6251-550-1PD
9389X
P-DSO-28-1
ana 608
SDA9388
EIA-744
HFP2
vga Picture-in-Picture Processor
EIA-608
SDA9489X
v-chip
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Untitled
Abstract: No abstract text available
Text: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT10J311
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Untitled
Abstract: No abstract text available
Text: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30 s Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT30J311
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GT10J311
Abstract: 216H
Text: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT10J311
GT10J311
216H
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Untitled
Abstract: No abstract text available
Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT20J311
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GT30
Abstract: GT30J311
Text: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT30J311
GT30
GT30J311
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