DG2002
Abstract: DG2002DL HP4192A SC70-6
Text: DG2002 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 8 ns, tOFF: 6 ns Low Charge Injection - QINJ: 5 pC
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DG2002
SC-70
DG2002
S-03501--Rev.
16-Apr-01
HP4192A
DG2002DL
HP4192A
SC70-6
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PDF
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Si4810DY
Abstract: 70-911
Text: SPICE Device Model Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET + Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4810DY
16-Apr-01
70-911
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PDF
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Si5433DC
Abstract: No abstract text available
Text: SPICE Device Model Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5433DC
16-Apr-01
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PDF
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Si6820DQ
Abstract: 16-Apr
Text: SPICE Device Model Si6820DQ Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET + Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6820DQ
16-Apr-01
16-Apr
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PDF
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Si6967DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6967DQ
16-Apr-01
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PDF
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Si3430DV
Abstract: Si3430DV SPICE Device Model
Text: SPICE Device Model Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3430DV
16-Apr-01
Si3430DV SPICE Device Model
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PDF
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Si4840DY
Abstract: No abstract text available
Text: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4840DY
16-Apr-01
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PDF
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Si4430DY
Abstract: No abstract text available
Text: SPICE Device Model Si4430DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4430DY
16-Apr-01
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PDF
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Si5853DC
Abstract: No abstract text available
Text: SPICE Device Model Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5853DC
16-Apr-01
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PDF
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Si4864DY
Abstract: No abstract text available
Text: Si4864DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.5-mW rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0035 @ VGS = 4.5 V 25 0.0047 @ VGS = 2.5 V
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Si4864DY
S-03484--Rev.
16-Apr-01
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PDF
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Si7450DP
Abstract: No abstract text available
Text: Si7450DP New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 5.3 0.090 @ VGS = 6 V 5.0 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
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Si7450DP
07-mm
S-03475--Rev.
16-Apr-01
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PDF
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Si5435DC
Abstract: No abstract text available
Text: SPICE Device Model Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5435DC
16-Apr-01
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PDF
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SUD35N05-26L
Abstract: No abstract text available
Text: SUD35N05-26L New Product Vishay Siliconix N-Channel 55-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 55 ID D TrenchFETr Power MOSFETS D 175_C Rated Maximum Junction Temperature D Low Input Capacitance (A)a 0.020 @ VGS = 10 V 35 APPLICATIONS
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SUD35N05-26L
O-252
08-Apr-05
SUD35N05-26L
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PDF
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DG2002
Abstract: DG2002DL HP4192A SC70-6
Text: DG2002 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 8 ns, tOFF: 6 ns Low Charge Injection - QINJ: 5 pC
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Original
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DG2002
SC-70
DG2002
08-Apr-05
DG2002DL
HP4192A
SC70-6
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PDF
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Si4484EY
Abstract: No abstract text available
Text: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4484EY
16-Apr-01
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PDF
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Si4896DY
Abstract: No abstract text available
Text: SPICE Device Model Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4896DY
16-Apr-01
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PDF
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Si4894DY
Abstract: No abstract text available
Text: SPICE Device Model Si4894DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4894DY
16-Apr-01
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PDF
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Si6404DQ
Abstract: No abstract text available
Text: Si6404DQ New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch
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Original
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Si6404DQ
S-03483--Rev.
16-Apr-01
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PDF
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Si4854DY
Abstract: diode G1
Text: Si4854DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.026 @ VGS = 10 V 6.9 0.030 @ VGS = 4.5 V 6.4 0.041 @ VGS = 2.5 V 5.5 FEATURES D LITTLE FOOT Plust—Dual TrenchFETr Power MOSFET Plus Integrated Schottky
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Original
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Si4854DY
S-03476--Rev.
16-Apr-01
diode G1
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PDF
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26 awg peak current
Abstract: 552967-2
Text: 501-140 Qualification Test Report 05Jan04 Rev A All Para Revised EC 0990-1788-03 AMP-BARREL* Terminals 1. INTRODUCTION 1.1. Purpose Testing was performed on AMP-BARREL* Terminals to determine their conformance to the requirements of Product Specification 108-6025, Revision F.
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05Jan04
22Oct90
06Mar91;
16Apr01
17Oct03.
26 awg peak current
552967-2
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING MADE THIS DRAWING 6 5 15 UNPUBLI 5HED COPYRIGHT 19 R E LE A SE D BY AMP FOR P U B L I C A T I O N INCORPORATED. 2 3 4 77 IN THIRD ANGLE P RO J EC TI O N DI ST LOC 19 AJ ALL INTERNATIONAL RIGHTS RESERVED. REV I 5 I0N5 16 LTR ZO N E DE5 C R [ R T IO N
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OCR Scan
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0U20-0072-01
16APR01
NIL-N-24519,
GPT-15F,
UL94V-0
0L94V-0
OC-Z-363.
QQ-B-750.
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 DRAWING THIS MADE IN THIRD DRAWING A NG L E IS 3 PROJECTION UNPUBLISHED COPYRIGHT 19 RELEASED BY ANP FOR 2 PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC 19 RIGHTS AJ RESERVED. DI S T REV I 5 IONS 16 P F Z ONE LTR c DESCRIPTION 0B5 -2 PER 0 U 2 0 - 0 0 7 2 - 0 1
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OCR Scan
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0U20-0072-01
6APR01
QG-B-750
QG-2-363
Q0-N-290,
NIL-G-45204,
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G 3H — 0 0 1 2 — 0 4 DATE DWN APVD 20JAN04 JR MS D D 1 30 1 ” C= • m ■ □
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OCR Scan
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20JAN04
40009CC
16APR01
31MAR2000
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PDF
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aj 312
Abstract: c246
Text: 4 DRAWING THIS MA D E IN THIRD DRAWING 2 ANGLE IS 3 UNP0BDI5HED. COPYRIGHT RE D E AS E D 19 BY AMP FOR PÜBDICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI ST L OC ,19 AJ RESERVED. 16 REV I 5 I 0 N5 P F Z O NE LTR DESCRIPTION E 0B5 - 1 3
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OCR Scan
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0U20-0072-01
16APR01
33bc4
16-APR-01
aj 312
c246
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PDF
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