K4115 toshiba
Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
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2SK4115
K4115 toshiba
TRANSISTOR K4115
k4115
2SK4115
K4115 toshiba transistor
DSAE002454
toshiba k4115
2SK4115* equivalent
k411
SC-65
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K2613
Abstract: toshiba k2613 2SK2613
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
910lled
K2613
toshiba k2613
2SK2613
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toshiba k2613
Abstract: K2613 K2613 TOSHIBA 2SK2613
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
toshiba k2613
K2613
K2613 TOSHIBA
2SK2613
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toshiba k2613
Abstract: 2SK2613 K2613
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
910lled
toshiba k2613
2SK2613
K2613
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Untitled
Abstract: No abstract text available
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
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Untitled
Abstract: No abstract text available
Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •
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2SK3905
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toshiba k2613
Abstract: K2613
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
toshiba k2613
K2613
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Untitled
Abstract: No abstract text available
Text: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •
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2SK3904
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K3903
Abstract: 2SK3903 SC-65 2SK3903(F)
Text: 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3903 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) •
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2SK3903
K3903
2SK3903
SC-65
2SK3903(F)
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k3878
Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •
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2SK3878
k3878
transistor Toshiba K3878
toshiba k3878
2SK3878
transistor k3878
APPLICATION NOTE K3878
2SK3878 equivalent
k3878 toshiba
K387
SC-65
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2SK2613
Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
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2SK2613
2SK2613
k2613
toshiba k2613
K2613 TOSHIBA
K261
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2SK3905
Abstract: SC-65 K3905
Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •
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2SK3905
2SK3905
SC-65
K3905
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K2313
Abstract: 2SK2313 jeita sc-65 2SK2313F
Text: 2SK2313 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2313 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 8mΩ (標準) z オン抵抗が低い。
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2SK2313
10VID
SC-65
2-16C1B
K2313
2002/95/EC)
K2313
2SK2313
jeita sc-65
2SK2313F
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K2398
Abstract: jeita sc-65 2SK2398
Text: 2SK2398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2398 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 22mΩ (標準) z オン抵抗が低い。
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2SK2398
10VID
SC-65
2-16C1B
K2398
2002/95/EC)
K2398
jeita sc-65
2SK2398
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k3904
Abstract: 2SK3904 SC-65
Text: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •
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2SK3904
k3904
2SK3904
SC-65
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K4115 toshiba
Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2
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2SK4115
K4115 toshiba
TRANSISTOR K4115
k4115
toshiba k4115
K4115 toshiba transistor
2SK4115
TRANSISTOR 2SK4115
2SK4115* equivalent
k411
SC-65
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k3878
Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •
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2SK3878
k3878
transistor Toshiba K3878
APPLICATION NOTE K3878
toshiba k3878
2SK3878
k3878 toshiba
2SK3878 equivalent
transistor k3878
SC-65
K3878 transistor
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K4115 toshiba
Abstract: TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65
Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
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2SK4115
K4115 toshiba
TRANSISTOR K4115
k4115
2SK4115
TRANSISTOR 2SK4115
K4115 toshiba transistor
k411
SC-65
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3p transistor
Abstract: 2-16C1B
Text: Transistor Outline Package New Type TO–3P (N) Package Outline Dimensions Outline Dimensions Unit: mm 1.8 max 15.9 max 3.3 max 2.0 ±0.3 1.0 +0.3 –0.25 5.45 ±0.2 20.5 ±0.5 9.0 2.0 20.0 ±0.3 4.5 φ3.2 ±0.2 3 4.8 max 2 2.8 1 (Bottom view) 0.6 +0.3 –0.1
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16D1A
16C1A
16C1B
16C1C
3p transistor
2-16C1B
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Untitled
Abstract: No abstract text available
Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A1234567898AAABCDCEFCAFB A AAA AAAAAAAAAAA AA AAAAA A AAAAAAAA A A CA3E AAA AA1EEAFBAFB3CBAA E C ACA 6 AFE CD!A" E#A CCCA988$
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234567898A
6789812345678194A1B4CD1AEF1D4178589421A6D
6B34B4
D3499831A6D
BF1C497836
4E3716C178C6
871D41
1C41F4
31234D4DF28C18ECF1E
71D34
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2SK3905
Abstract: SC-65 K3905
Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •
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2SK3905
2SK3905
SC-65
K3905
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K2173
Abstract: 2SK2173 jeita sc-65 25A1317
Text: 2SK2173 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2173 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 13mΩ(標準) z オン抵抗が低い。
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2SK2173
10VID
SC-65
2-16C1B
K2173
2002/95/EC)
K2173
2SK2173
jeita sc-65
25A1317
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2-16c1b
Abstract: S16C SC-65
Text: 2-16C1B Uniti rin 03. 2±0. 2 5, 45*0, 2 5, 45±0, 2 SO o Nane TD -3 P C N JEDEC - E I AJ Toshiba Discrete SC -6 5 2 -16 C 1B Circuit - ^ i- 1 • NiiQinNcnr Integrated Aug.2000
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S-16C1B
SC-65
2-16C1B
2000S-16C1B
2-16c1b
S16C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 16C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The 16C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1BEG-80L
216-WORD
72-BIT
THMY7216C1BEG
TC59S6408BFT
72-bit
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