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    Infineon Technologies AG IPD16CN10N-G

    MOSFET N-CH 100V 53A TO252-3
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    DigiKey IPD16CN10N-G Reel 2,500
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    Infineon Technologies AG IPB16CN10N-G

    MOSFET N-CH 100V 53A D2PAK
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    DigiKey IPB16CN10N-G Reel 1,000
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    Infineon Technologies AG IPP16CN10NGHKSA1

    MOSFET N-CH 100V 53A TO220-3
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    DigiKey IPP16CN10NGHKSA1 Tube 500
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    EBV Elektronik IPP16CN10NGHKSA1 71 Weeks 50
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    Infineon Technologies AG IPP16CN10NGXKSA1

    MOSFET N-CH 100V 53A TO220-3
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    DigiKey IPP16CN10NGXKSA1 Tube 500
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    Rochester Electronics IPP16CN10NGXKSA1 5 1
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    Infineon Technologies AG IPP16CN10NG

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    Bristol Electronics IPP16CN10NG 2
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    16CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16cn10n

    Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
    Text: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1

    16cn10n

    Abstract: 16cn10 IPB16CN10N 16CN1
    Text: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 16CN10N 16cn10n 16cn10 16CN1

    16cn10n

    Abstract: IEC61249-2-21 IPP16CN10N PG-TO220-3 infineon marking TO-252
    Text: 16CN10N G 16CN10N G 16CN10N G 16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 16 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPD16CN10N IPI16CN10N IPP16CN10N IEC61249-2-21 PG-TO263-3 16cn10n IEC61249-2-21 PG-TO220-3 infineon marking TO-252

    IPP16CN10N

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 16CN10N

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    16cn10n

    Abstract: IPP16CN10N PG-TO220-3
    Text: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n PG-TO220-3