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IXYS Corporation IXGH16N170 IGBT NPT 1700V 32A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH16N170	Tube	2,549		1	1 $10.62 10 $10.62 100 $6.727 1000 $10.62 10000 $10.62	Buy Now
Mouser Electronics	IXGH16N170		971			1 $8.49 10 $8.39 100 $6.72 1000 $5.96 10000 $5.96	Buy Now
Newark	IXGH16N170	Bulk	432		1	1 $11.93 10 $11.13 100 $9.53 1000 $8.52 10000 $8.52	Buy Now
TTI	IXGH16N170	Tube	300		30	1 - 10 - 100 $8.11 1000 $8.11 10000 $8.11	Buy Now
TME	IXGH16N170				1	1 $10.54 10 $8.72 100 $8.42 1000 $8.42 10000 $8.42	Get Quote
IXYS Corporation IXYH16N170C IGBT 1.7KV 40A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH16N170C	Tube	1,213		1	1 $8.82 10 $8.82 100 $5.51533 1000 $4.71763 10000 $4.71763	Buy Now
Mouser Electronics	IXYH16N170C		298			1 $8.82 10 $8.59 100 $5.51 1000 $4.72 10000 $4.72	Buy Now
TTI	IXYH16N170C	Tube			300	1 - 10 - 100 - 1000 $4.91 10000 $4.91	Buy Now
TME	IXYH16N170C				1	1 $10.74 10 $8.53 100 $7.67 1000 $7.67 10000 $7.67	Get Quote
IXYS Corporation IXGT16N170A IGBT NPT 1700V 16A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT16N170A	Tube	556		1	1 $16.47 10 $16.47 100 $10.782 1000 $16.47 10000 $16.47	Buy Now
Mouser Electronics	IXGT16N170A		3,119			1 $16.43 10 $15.4 100 $10.78 1000 $10.35 10000 $10.35	Buy Now
TTI	IXGT16N170A	Tube	300		30	1 - 10 - 100 $14.34 1000 $14.34 10000 $14.34	Buy Now
TME	IXGT16N170A				1	1 $14.32 10 $11.38 100 $10.2 1000 $10.2 10000 $10.2	Get Quote
IXYS Corporation IXYH16N170CV1 IGBT 1.7KV 40A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH16N170CV1	Tube	294		1	1 $10.94 10 $10.94 100 $6.94833 1000 $10.94 10000 $10.94	Buy Now
Mouser Electronics	IXYH16N170CV1					1 $10.79 10 $10.78 100 $6.92 1000 $6.19 10000 $6.19	Get Quote
TTI	IXYH16N170CV1	Tube			300	1 - 10 - 100 - 1000 $6.2 10000 $6.2	Buy Now
TME	IXYH16N170CV1				1	1 $14.22 10 $11.16 100 $10.07 1000 $10.07 10000 $10.07	Get Quote
IXYS Corporation IXGH16N170A IGBT 1700V 16A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH16N170A	Tube	254		1	1 $11.04 10 $11.04 100 $7.01633 1000 $11.04 10000 $11.04	Buy Now
Mouser Electronics	IXGH16N170A		422			1 $11.04 10 $10.75 100 $6.92 1000 $6.26 10000 $6.26	Buy Now
TTI	IXGH16N170A	Tube			300	1 - 10 - 100 - 1000 $8.52 10000 $8.52	Buy Now
TME	IXGH16N170A				1	1 $11.16 10 $8.82 100 $7.92 1000 $7.92 10000 $7.92	Get Quote
New Advantage Corporation	IXGH16N170A		292		1	1 - 10 - 100 $17.61 1000 $16.43 10000 $16.43	Buy Now

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16N170 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
752 J 1600 V CAPACITOR Abstract: 16N170 BiMOSFET Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET
Untitled Abstract: No abstract text available Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	16N170 O-268 O-247
Untitled Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1
smd diode 819 Abstract: 16N170A mos 1200v to-247 Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	PDF	16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247
16N170A Abstract: TO-247 weight IXGH16N170A Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	16N170A 728B1 TO-247 weight IXGH16N170A
ixys ixgh 16n170 Abstract: S60A 16N170 DS98996 Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170 O-247 O-268 728B1 ixys ixgh 16n170 S60A DS98996
16N170AH1 Abstract: 16N170A robot control 16N170 Text: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	PDF	16N170A 16N170AH1 O-247 405B2 16N170A robot control 16N170
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1
16n170 Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170 O-247 O-268 728B1 123B1 728B1 065B1 16N170
16N170A Abstract: diode 22 161 smd Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	16N170A 16N170A diode 22 161 smd
ixys ixgh 16n170 Abstract: 16N170 IXGH 16N170 PF752 Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	16N170 O-268 O-247 ixys ixgh 16n170 16N170 IXGH 16N170 PF752
752 C 1600 V CAPACITOR Abstract: 16N170 Text: High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	16N170 O-268 O-247 752 C 1600 V CAPACITOR
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	PDF	16N170A 16N170A O-268 O-247
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	16N170AH1 ISOPLUS247 E153432 minute00 405B2 A1540 rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1

ad 161 transistor Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170 16N170 O-268 O-247 ad 161 transistor
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170AH1 W1700
16N170 Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	16N170A 16N170A O-268 O-247 16N170
Untitled Abstract: No abstract text available Text: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 338B2
IXGH16N170A Abstract: IXGT16N170A Text: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	PDF	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 16N170A DH10A-1800PA IXGH16N170A IXGT16N170A
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	PDF	16N170A 16N170 42N170 40N160 9N160 15N140
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	PDF	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

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16N170 Price and Stock

IXYS Corporation IXGH16N170

IXYS Corporation IXYH16N170C

IXYS Corporation IXGT16N170A

IXYS Corporation IXYH16N170CV1

IXYS Corporation IXGH16N170A

16N170 Datasheets Context Search

752 J 1600 V CAPACITOR

Untitled

Untitled

smd diode 819

16N170A

ixys ixgh 16n170

16N170AH1

16N170AH1

16n170

16N170A

ixys ixgh 16n170

752 C 1600 V CAPACITOR

Untitled

A1540

ad 161 transistor

Untitled

16N170

Untitled

IXGH16N170A

7N60B equivalent

40N160

50N60