VF175-88
Abstract: RF GAIN LTD VF175 mosfet vhf power amplifier H101X all mosfet vhf power amplifier 175 w low-vhf amplifier
Text: VF175-88 175 W Low-VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • 54 - 88 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min
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VF175-88
40W267
VF175-88
RF GAIN LTD
VF175
mosfet vhf power amplifier
H101X
all mosfet vhf power amplifier
175 w low-vhf amplifier
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2N6255
Abstract: 4 watt VHF
Text: 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and
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2N6255
To-39
56-570-65/3B
2N6255
4 watt VHF
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MRF237
Abstract: Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF1946A MRF transistor 237 MRF high power transistor
Text: Order this document by AN955/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN955 A COST EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF
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AN955/D
AN955
MRF1946A
MRF237
Transistor MRF237
MRF1946 equivalent
MRF transistor
VK200 mrf237
Motorola transistors MRF
High frequency MRF transistor
MRF transistor 237
MRF high power transistor
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mrf237 MOTOROLA
Abstract: choke vk200 VK200 inductor of high frequencies motorola MRF MRF237 motorola mrf237 Motorola transistors MRF vk200 choke VK200 mrf237 motorola application note amplifier power
Text: MOTOROLA Order this document by AN955/D SEMICONDUCTOR APPLICATION NOTE AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for Land Mobile Radios Prepared by: Ken Dufour
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AN955/D
AN955
MRF1946A
mrf237 MOTOROLA
choke vk200
VK200 inductor of high frequencies
motorola MRF
MRF237
motorola mrf237
Motorola transistors MRF
vk200 choke
VK200 mrf237
motorola application note amplifier power
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300w amplifier
Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Text: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.
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FM500-108C
125Wrms,
250Wrms
500Wrms
THV400
1-800-RF
G3000/BJ
MK040221
300w amplifier
500w audio amplifier assembling
LDU400C
300w class ab amplifier
RF Amplifier 500w 175 mhz
ldu05
uhf 1kw amplifier
fm mosfet amplifier 1kw
THU2604
HF300-0130
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NTE477
Abstract: No abstract text available
Text: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz
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NTE477
NTE477
175MHz
175MHz,
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MRF237
Abstract: mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 MRF1946A Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D AN955 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. A Cost Effective VHF Amplifier for
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AN955/D
AN955
MRF1946A
MRF237
mrf237 MOTOROLA
motorola mrf237
motorola MRF
VK200 mrf237
Transistor MRF237
Motorola transistors MRF
MRF transistor
High frequency MRF transistor
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BH Rf transistor
Abstract: AN-938 AN938
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB
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StF553
MRF553
BH Rf transistor
AN-938
AN938
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AN-938
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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MRF553
AN-938
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1h31
Abstract: J107 DIODE J57 diode j143
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum G ain = 11.5 dB
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MRF553
1h31
J107 DIODE
J57 diode
j143
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TP2314
Abstract: j644
Text: 1EE D I b3L?25M 0 0 0 0 2 5 0 MOTOROLA SC MOTOROLA T | XS TRS /R F SEMICONDUCTOR TECHNICAL DATA TP2314 The RF Line V H F P o w e r T ran sìsto r Designed for 6 V to 12 V VHF applications and is intended for Class A, B or C medium power amplifiers, frequency multipliers or oscillator circuits.
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TP2314
TP2314
j644
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2SC1946
Abstract: transistor 2sc1946
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN E P ITA X IA L PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions in mm FEATURES
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2SC1946
2SC1946
175MHz
175MHz.
T-31E
transistor 2sc1946
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2SC2237
Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC2237
175MHz
175MHz.
175MHz
2SC2237
8w RF POWER TRANSISTOR NPN
RF TRANSISTOR
RF POWER TRANSISTOR NPN vhf
7001k
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2SC2694
Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2694
2SC2694
175MHz
175MHz,
DATA transistor 2SC2694
2sc2694 application note
2SC2694 equivalent
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2SC2628
Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
NPN EPITAXIAL PLANAR TYPE 175mhz 1w
18W 12 transistor
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2SC2237
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES
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2SC2237
175MHz
175MHz.
22SUBISHI
2SC2237
175MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
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Granberg
Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers
Text: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola Semiconductor Products Sector Reprinted with permission of Microwaves & RF. November 1987 issue. 1987 Hayden Publishing Co. Inc., All rights reserved. MOTOROLA Semiconductor Products Inc.
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AR305/D
Granberg
AR305
create uhf vhf tv matching transformer
"Good RF Construction Practices and Techniques"
Practical Wideband RF Power Transformers
ar164
Design of H. F. Wideband Power Transformers
Building push-pull multioctave, VHF power amplifiers
300w amplifier
rf power transformers
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2540
2SC2540
175MHz
175MHz,
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BLF245
Abstract: sot123 package VHF transistor amplifier circuit
Text: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability
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BLF245
OT123
-SOT123
MBAJ79
BLF245
sot123 package
VHF transistor amplifier circuit
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SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
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BLF244
711002b
OT123
7110fi5b
T-39-11
SOT123 Package
SOT123
BLF244
International Power Sources
SOT-123
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Untitled
Abstract: No abstract text available
Text: GAE GREAT AMERICAN ELECTROINCS B2-8Z Silicon NPN power VHF transistor B2-8Z is designed for 8 volt power amplifier applications in communication equipment. Especially suited for portable transceivers where low battery voltage is used. Output Power: Frequency Range:
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2sc2094
Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES
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2SC2094
175MHz
175MHz.
IMD-30dBc
15WPEP
2SC2094
100mA
175MHz
transistor 2sc2094
PW150
15WPEP
transistor rf vhf
2SC209
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TRANSISTOR BV 32
Abstract: TRANSISTOR FQ
Text: GAE GREAT AMERICAN ELECTROINCS B2-8Z Silicon NPN power VHF transistor B2-8Z is designed for 8 volt power amplifier applications in communication equipment. Especially suited for portable transceivers where low battery voltage is used. Output Power: Frequency Range:
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