Untitled
Abstract: No abstract text available
Text: Series REC 115 L www.vishay.com Vishay Sfernice Precision Linear Transducers, Conductive Plastic, up to 1000 mm FEATURES • Measurement range 25 mm to 1000 mm • High accuracy ± 1 % down to ± 0.025 % • Excellent repeatability • Essentially infinite resolution
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SMD DATASHEET
Abstract: No abstract text available
Text: TAS CNS www.vishay.com Vishay Sfernice Conformal Coating, Single-In-Line Thin Film Resistor, Through Hole Networks FEATURES • • • • • Actual Size These networks are designed to be used in analog circuits in conjunction with operational amplifiers. In addition to the
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SMD DATASHEET
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case
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Original
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VS-GB300TH120N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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fast diode for welder application
Abstract: No abstract text available
Text: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses
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Original
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VS-GB200TH120U
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
fast diode for welder application
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PDF
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ORNTA
Abstract: No abstract text available
Text: ORN Divider Vishay Dale Thin Film モールド50 mil ピッチ、 デュアルインライン抵抗器、表面実装ネットワーク 特徴 • 製品高さ 0.068" （1.73 mm）（最大） • 抵抗素子内部のはんだ付け作業を必要としない
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Original
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MS-012
2011/65/EU
2002/95/EC
JS709A
02-Oct-12
ORNTA
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 FO-55112-B HONEYWELL PART NUMBER 3 REV 1.372 12 31TW2 SERIES CHART 1 D 2 (.520 ) .620 .010 .035 -A- .015 FAA-PMA LISTING CATALOG LISTING FAA-PMA 31TW2-207 FAA-PMA 31TW2-62 31TW2-205 1 DOCUMENT 0093066 CIRCUIT MADE WITH TOGGLE LEVER IN CENTER INTERPHONE
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Original
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FO-55112-B
31TW2
31TW2-207
31TW2-62
31TW2-205
17SEP12
30VDC
01JUL02
5M-1982
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PDF
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SQM100N04-2m7
Abstract: No abstract text available
Text: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027
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Original
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SQM100N04-2m7
AEC-Q101
O-263
O-263
SQM100N04-2m7-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQM100N04-2m7
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PDF
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Untitled
Abstract: No abstract text available
Text: PLT www.vishay.com Vishay Dale Thin Film Precision Low TCR Thin Film Resistor, Surface Mount Chip, ± 5 ppm/°C TCR, 0.01 % Tolerance FEATURES • TCR of ± 5 ppm/°C standard • Tolerances to ± 0.01 % • Anti corrosion resistant film with SPM special
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-100BGQ100HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 175 °C max. operating junction temperature High frequency operation Low forward voltage drop Continuous high current operation
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Original
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VS-100BGQ100HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Series REC 110 L www.vishay.com Vishay Sfernice Precision Linear Transducers, Conductive Plastic, up to 450 mm FEATURES • Large measurement range • High accuracy ± 1 % down to ± 0.05 % • Essentially infinite resolution • Easy mounting • Material categorization: For definitions of compliance
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB75TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 s short circuit capability • VCE on with positive temperature coefficient • Low inductance case
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Original
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VS-GB75TP120N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM60N20-35 www.vishay.com Vishay Siliconix Automotive N-Channel 200 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 200 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.035
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Original
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SQM60N20-35
AEC-Q101
O-263
O-263
SQM60N20-35-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient
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Original
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VS-GB200LH120N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient
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Original
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VS-GB200NH120N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C
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Original
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VS-GT100TP60N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient
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Original
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VS-GB100NH120N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB150TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient
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Original
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VS-GB150TH120N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C
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Original
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VS-GB200TH120N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES • High short circuit capability • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C
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Original
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VS-GA200TH60S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-100BGQ045HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation
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Original
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VS-100BGQ045HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C
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Original
|
VS-GT100TP60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Series ECS www.vishay.com Vishay Sfernice Precision Rotative Transducers, Conductive Plastic, Economic Series ECS FEATURES • • • • • • Size 09: (7/8") 22.2 mm Long life: 5 million cycles Bush or servo mounting types available Rear comolded terminals
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Original
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0027
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Original
|
SQM100N04-2m7
AEC-Q101
O-263
SQM100N04-2m7-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VS-100BGQ030HF4 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation
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Original
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VS-100BGQ030HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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