uPD431018
Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature
|
Original
|
PD431018
64K-WORD
18-BIT
PD431018
44-pin
I/O10
I/O18)
uPD431018
uPD431018LE-15
UPD431018LE
IC 8821
uPD431018L
nec 44pin 1993
|
PDF
|
4108 RAM
Abstract: No abstract text available
Text: LH52256AS FEATURES CMOS 256K 32K x 8 Static RAM PIN CONNECTIONS • 32,768 × 8 bit organization • Access time: 500 ns (MAX.) 28-PIN SOP • Supply current: Operating: 36 mW (MAX.) 18 mW (tRC, tWC = 1 µs (TYP.) Standby: 72 µW (MAX.) TOP VIEW A14 1
|
Original
|
LH52256AS
28-PIN
28-pin,
450-mil
28TSOP
4108 RAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: «O V i C 1992 MEC il PD431018 65,536 x 18-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /1/PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology,
|
OCR Scan
|
PD431018
18-Bit
/1/PD431018
536-word
18-bit
44-Pin
XPD431018
PD431018
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SE C NEC Electronics Inc. fiPD431018 65,536 X 18-Bit Static CMOS RAM Description Pin Configurations The ¿¿PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem
|
OCR Scan
|
fiPD431018
18-Bit
PD431018
536-word
18-bit
44-Pin
HPD431018
/PD431018
IPD431018
|
PDF
|
NEC B 536
Abstract: uPD431018 lae42 Ic blz
Text: NEC ffPD431018 65,536 X 18-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology, unique CMOS peripheral circuits, and N-channel mem ory cells. It is suitable for cache memory and buffer
|
OCR Scan
|
uPD431018
18-Bit
/JPD431018
536-word
iPD431018
44-pin
HPD431018
JIPD431018
NEC B 536
lae42
Ic blz
|
PDF
|
118-TP
Abstract: No abstract text available
Text: MITSUBISHI LS Is , M5M5V1B118TP,RT-8,-10,-12 1179648-BIT 65536-WORD BY 18-BIT BiCMOS SYNCHRONOUS STATIC RAM DESCRIPTION The M 5 M 5V 1B 118 is a fam ily o f 6 5 536-w ord by 18-bit synchronous static R A M s, fabricated w ith the PIN CONFIGURATION (TOP VIEW)
|
OCR Scan
|
M5M5V1B118TP
1179648-BIT
65536-WORD
18-BIT)
536-w
18-bit
118-TP
|
PDF
|
HM62A168
Abstract: 8d15 62A168
Text: HM62A168/HM62A188 Series Prelim inary • PIN-OUT Direct M apped 8,192-Word x 16/18-Bit 2-Way 4,096-W ord x 16/18-Bit Static Cache RAM ■ DESCRIPTION T h e Hitachi H M 62 A 168 /H M 62A 1 88 is a high speed 128/144-kbit static cache RAM organized as 2-way set associative 4k x 16/18 or
|
OCR Scan
|
HM62A168/HM62A188
192-Word
16/18-Bit
128/144-kbit
52-pin
62A168/HM
62A188
HM62A168
8d15
62A168
|
PDF
|
4804B
Abstract: 4804 4804BCC semi 4804 4804a c 4804a TCO 706 1N3064 EMM Semi
Text: GENERAL DESCRIPTION FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power
|
OCR Scan
|
41024x1
4804B
4804
4804BCC
semi 4804
4804a
c 4804a
TCO 706
1N3064
EMM Semi
|
PDF
|
M2114A
Abstract: M2148H 1kx4 n irc 1028
Text: intei M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM MILITARY M2148H 70 Max. Access Time ns 180 Max. Active Current (mA) 30 Max. Standby Current (mA) HMOS E Technology High Density 18-Pin Package Completely Static Memory- •No Clock or Timing Strobe Required
|
OCR Scan
|
M2148H
18-Pin
M2114A
M2148H
4096-bit
1kx4
n irc 1028
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is t jw ^ M 5 M 5 V 1 B 0 1 8 J ,T P ,R T - 1 0 ,-1 2 ,-1 5 1179648-BIT 65536-WORD BY 18-BIT BICMOS STATIC RAM DESCRIPTION The M5M5V1B018 is a family of 65536-word by 18-bit PIN CONFIGURATION (TOP VIEW) static RAMs, fabricated with the high performance BiCMOS
|
OCR Scan
|
1179648-BIT
65536-WORD
18-BIT)
M5M5V1B018
18-bit
M5M5V1B018J
RT-10
|
PDF
|
IC 4804
Abstract: No abstract text available
Text: FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Common I/O Bus
|
OCR Scan
|
41024x1
IC 4804
|
PDF
|
M2147
Abstract: intel 2147
Text: in te i M2147 4096 X 1 BIT STATIC RAM M2147 Max. Access Time ns 85 180 Max. Active Current (mA) Max. Standby Current (mA) 30 HMOS Technology Automatic Power-Down Completely Static Memory — No Clock or Timing Strobe Required High Density 18-Pin Package
|
OCR Scan
|
M2147
18-Pin
M2147
4096-bit
M2147.
intel 2147
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION CMOS 64K x 18 Static RAM FEATURES • Fast Access Times: 20/25/30/35 ns • Space Saving 52-Pin PLCC • JEDEC Standard Pinout • Wide Word 18-Bits for: - Improved Performance - Reduced Component Count - Nine-bit Byte for Parity
|
OCR Scan
|
52-Pin
18-Bits)
LH521028
LH521028
52-pin,
PLCC52-P-750)
LH521028U-25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N M T 5 6C 0 41 6 DUAL 4Kx 16/18 SRAM, SINGLE 8Kx 16/18 CACHE DATA STATIC RAMS CONFIGURABLE CACHE DATA RAM FEATURES PIN ASSIGNMENT Top View • Operates as two 4K x 16/18 SRAMs with common addresses, common data and separate control signals.
|
OCR Scan
|
52-Pin
|
PDF
|
|
|
82385
Abstract: micron memory sram cache micron memory sram intel 82385 74LS373 A12 marking intel sram MT56C0416 1638C 1.2 Micron CMOS Process Family
Text: ADVANCE M IC R O N MT56C0416 DUAL 4Kx 16/18 SRAM, SINGLE 8Kx 16/18 CACHE DATA STATIC RAMS CO NFIGURABLE CACHE DATA RAM FEATURES PIN A SS IG N M E N T Top View • Operates as two 4K x 16/18 SRAMs with common addresses, common data and separate control signals.
|
OCR Scan
|
MT56C0416
MT56C0416
82385
micron memory sram cache
micron memory sram
intel 82385
74LS373
A12 marking
intel sram
1638C
1.2 Micron CMOS Process Family
|
PDF
|
5114 ram
Abstract: 5114 intel 2114a 2114a
Text: 5114 1024 x 4 BIT STATIC CM O S RAM • Fully Static Operation; No Clocks, Strobes or Latches ■ Data Retention at 2.0V ■ Identical Cycle and Access Times ■ High Performance; 150 ris Access Time ■ TTL Compatible Inputs and Outputs ■ Hi9 h Dens'ty 18-Pin Package
|
OCR Scan
|
18-Pin
4096-bit
5114 ram
5114
intel 2114a
2114a
|
PDF
|
M2114A
Abstract: M2148H
Text: in t e i M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM M ilitary M2148H-3 M2148H Max. Access Time ns 55 70 Max. Active Current (mA) 180 180 Max. Standby Current (mA) 30 30 HMOS III Technology High Density 18-Pin Package Completely Static Memory — No Clock
|
OCR Scan
|
M2148H
M2148H-3
18-Pin
M2114A
M2148H
4096-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3ÔE D MICRON TECHNOLOGY INC blllSM'l QGQ3G2Q 1 • MRN r - % - n - ìz aìa r CACHE DATA STATIC RAM DUAL 4Kx 18 SRAM, SINGLE 8Kx 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIG N M EN T Top View • Automatic WRITE cycle completion • Operates as two 4K x 18 SRAMs with common
|
OCR Scan
|
33MHz
25MHz
|
PDF
|
MK2147-70
Abstract: MK2147-55 vs5-24v MK2147 MK2147-85
Text: MOSTEK 4K x 1 -BIT STATIC RAM M K 2147 J -55/70/85 FEATURES □ Address Activated static m em ory— no clock or tim in g strobe required □ Sicaled Poly 5™ technology □ Industry standard 18-pin dip configuration □ Access tim e equal cycle tim e
|
OCR Scan
|
MK2147
18-pin
MK2147-55
180mA
MK2147-70
160mA
MK2147-85
vs5-24v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: intei M2148H HIGH SPEED 1024 x 4 BIT STATIC RAM Military M2148H-3 M2148H Max. Access Time ns 55 70 Max. Active Current (mA) 180 180 Max. Standby Current (mA) 30 30 H M O S III Technology High Density 18-Pin Package Completely Static Memory — No Clock or Timing Strobe Required
|
OCR Scan
|
M2148H
M2148H-3
18-Pin
M2114A
4096-bit
|
PDF
|
5104
Abstract: N5104 2141 ram 2141 intel 5104 dm
Text: A[WM1 I 0MF© GM¥0®M intéf 5104 4096 x 1 BIT STATIC CMOS RAM • Data Retention at 2.0V Fully Static Operation; No Clocks, Strobes or Latches High Performance; 150 ns Access Time ■ Identical Cycle and Access Times TTL Compatible Inputs and Outputs ■ High Density 18-Pin Package
|
OCR Scan
|
18-Pin
4096-bit
5104
N5104
2141 ram
2141 intel
5104 dm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Emm semi FEA TU R E S • Single +5V Power Supply ■ 4Kx1 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Separate Data In and Data Out
|
OCR Scan
|
41024x1
Number4801
40961-bit
|
PDF
|
4804B
Abstract: TCO 706 EMM Semi 4804 C 4804 c 4804a 4804 B 1N3064 4096 bit static RAM 4804BCC
Text: L - j L . m mm liiiis ii ‘« t e w s GENERAL DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Single +5 V Power Supply 1 Kx4 Organization Replaces 41024x1 Static RAMs Com pletely Static—No Clocks or Refresh 18 Pin Package A ccess/C ycle Times As Low As 400 nsec max
|
OCR Scan
|
41024x1
4804B
TCO 706
EMM Semi
4804
C 4804
c 4804a
4804 B
1N3064
4096 bit static RAM
4804BCC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1K Commercial X2212A Jtor 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles
|
OCR Scan
|
X2212A
18-Pin
X2212A
|
PDF
|
