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    1802 NPN TRANSISTOR Search Results

    1802 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    1802 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1714-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: 1713-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: 1718-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: 1717-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: 1711-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Abstract: No abstract text available
    Text: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    A580-1802 Freq250k time10u PDF

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    Abstract: No abstract text available
    Text: 1716-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    AD558

    Abstract: AD558J AD558JN AD558JP AD558K interfacing of ad558 AD558KD
    Text: AD558–SPECIFICATIONS @ T = +25؇C, V A Model AD558J Typ Min = +5 V to +15 V unless otherwise noted AD558K Typ Max Units 8 8 8 Bits RELATIVE ACCURACY 2 0°C to +70°C –55°C to +125°C ± 1/2 ± 1/4 ± 1/2 ± 3/4 ± 1/4 ± 3/8 LSB LSB 0 to +2.56 0 to +10


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    AD558 AD558J AD558K AD558T1 AD558S1 AD558 C558f AD558J AD558JN AD558JP AD558K interfacing of ad558 AD558KD PDF

    AD558

    Abstract: AD558J AD558JN AD558JP AD558K interfacing of ad558
    Text: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V


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    16-Pin 20-Pin MIL-STD-883 AD558* AD558 C558f AD558 AD558J AD558JN AD558JP AD558K interfacing of ad558 PDF

    interfacing of ad558

    Abstract: AD558KP cdp 1802
    Text: BACK FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V


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    16-Pin 20-Pin MIL-STD-883 AD558* AD558 AD558 interfacing of ad558 AD558KP cdp 1802 PDF

    interfacing of ad558

    Abstract: ad558jn ad558sd AD558 CDP-1802 AD558J AD558K AD558S
    Text: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V


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    16-Pin 20-Pin MIL-STD-883 AD558* AD558 C558f AD558 interfacing of ad558 ad558jn ad558sd CDP-1802 AD558J AD558K AD558S PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage


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    BD8966FVM BD8966FVM 3000pcs PDF

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    Abstract: No abstract text available
    Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down High Efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage


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    BD8966FVM BD8966FVM PDF

    Equivalence transistor

    Abstract: FZ 76 capacitor BD8966FVM BD9106FVM CMD6D11B MCR10 VLF5014AT-4R7M1R1 rohm MCR10
    Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage


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    BD8966FVM BD8966FVM Equivalence transistor FZ 76 capacitor BD9106FVM CMD6D11B MCR10 VLF5014AT-4R7M1R1 rohm MCR10 PDF

    bta 05

    Abstract: BTA05
    Text: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05


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    Q68000-A3430 Q68000-A3428 OT-23 EHP00816 bta 05 BTA05 PDF

    2SA1802

    Abstract: 2SC4681
    Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)


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    2SC4681 2SA1802 PDF

    BD 61 9 40

    Abstract: No abstract text available
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


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    23StQS 617itter BD615 Q0Q43 TcaMS25' BD 61 9 40 PDF

    b0615

    Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


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    --25C BD618, Q62702-D946 Q62702-D948 Q62702-D950 Q62702-D952 Q62702-D954 611/BD 613/BD S250C b0615 b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


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    Q62702-F1681 OT-323 0122E04 900MHz D1525D5 PDF

    DLS-4201

    Abstract: fpm 250 airflow Warren GV 250fpm fp-m alarm DLS4203
    Text: THE NEW WARREN G-V "THERMUUOOR" SWITCH MONITORS FORCED AIR COOLING SYSTEMS WITH TWO LOGIC OUTPUTS _ * 6ENL SIG/ilARREN G-V S3E 1 • 3=11=1802 0 0 0 0 8 3 3 1T7 H i III AR D L S S e r ie s only from WARREN G-V -r- DESCRIPTION Warren G-V’s new thermal emulator, or


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DACPORT Low Cost, Complete ixP-Compatible 8-Bit DAC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output - 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: 1ms Voltage Settling to ±1/2LSB


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    AD558 16-Pin 20-Pin MIL-STD-883 AD558 200ns/DIV 500ns/DtV 100ns/DIV PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    gto Gate Drive circuit

    Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
    Text: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the


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    EB108 EB108/D gto Gate Drive circuit TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06 PDF

    interfacing of ad558

    Abstract: AD558KD
    Text: DACPORT Low Cost, Complete M-P-Compatible 8-Bit DflC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output — 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: Iju Voltage Settling to ±1/2LSB


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    AD558 16-Pin 20-Pin MIL-STD-883 AD558 AD558-- 200ns/DIV interfacing of ad558 AD558KD PDF