180N Search Results

180N Result Highlights (5)

Part	Manufacturer	Description
NP180N04TUJ-E1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive, MP-25ZT, /Embossed Tape
NP180N04TUK-E1-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 40V 180A 1.05mohm MP-25ZT/7pin TO-263 Automotive
NP180N04TUJ-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP180N04TUG-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP180N055TUK-E1-AY	Renesas Electronics Corporation	Nch Single Power MOSFET 55V 180A 1.4mohm MP-25ZT/7pin TO-263 Automotive

180N Price and Stock

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TAIYO YUDEN LSMCA160808T180NGR FERRITE BEAD 18 OHM 0603 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LSMCA160808T180NGR	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.02687	Buy Now
Mouser Electronics	LSMCA160808T180NGR		15,064			1 $0.12 10 $0.064 100 $0.044 1000 $0.03 10000 $0.025	Buy Now
Avnet Abacus	LSMCA160808T180NGR			17 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPD180N10N3GATMA1 MOSFET N-CH 100V 43A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD180N10N3GATMA1	Cut Tape	5,925		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53652 10000 $0.53652	Buy Now
	IPD180N10N3GATMA1	Digi-Reel	5,925		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53652 10000 $0.53652	Buy Now
	IPD180N10N3GATMA1	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.4515	Buy Now
Avnet Americas	IPD180N10N3GATMA1	Reel		16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD180N10N3GATMA1		11,807			1 $0.65 10 $0.642 100 $0.539 1000 $0.452 10000 $0.451	Buy Now
Bristol Electronics	IPD180N10N3GATMA1		324			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPD180N10N3GATMA1				1	1 $0.5017 10 $0.5017 100 $0.4716 1000 $0.4264 10000 $0.4264	Buy Now

Chip1Stop	IPD180N10N3GATMA1	Cut Tape	2,273			1 - 10 $0.869 100 $0.58 1000 $0.421 10000 $0.421	Buy Now
EBV Elektronik	IPD180N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPD180N10N3GATMA1		23,700			1 - 10 - 100 $0.6683 1000 $0.5174 10000 $0.5174	Buy Now
Vishay Siliconix SIHD180N60E-GE3 MOSFET N-CH 600V 19A TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD180N60E-GE3	Tube	2,857		1	1 $3.08 10 $2.022 100 $3.08 1000 $1.28876 10000 $1.28876	Buy Now
New Advantage Corporation	SIHD180N60E-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $1.74	Buy Now
Nisshinbo Micro Devices R1180N331B-TR-FE IC REG LINEAR 3.3V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1180N331B-TR-FE	Cut Tape	2,091		1	1 $0.58 10 $0.408 100 $0.3182 1000 $0.27126 10000 $0.27126	Buy Now
	R1180N331B-TR-FE	Digi-Reel	2,091		1	1 $0.58 10 $0.408 100 $0.3182 1000 $0.27126 10000 $0.27126	Buy Now
Infineon Technologies AG IAUA180N08S5N026AUMA1 MOSFET_(75V 120V( PG-HSOF-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IAUA180N08S5N026AUMA1	Digi-Reel	1,490		1	1 $3.55 10 $2.322 100 $3.55 1000 $1.22949 10000 $1.22949	Buy Now
	IAUA180N08S5N026AUMA1	Cut Tape	1,490		1	1 $3.55 10 $2.322 100 $3.55 1000 $1.22949 10000 $1.22949	Buy Now
Mouser Electronics	IAUA180N08S5N026AUMA1		3,326			1 $3.17 10 $2.16 100 $1.54 1000 $1.23 10000 $1.2	Buy Now
Rochester Electronics	IAUA180N08S5N026AUMA1		15,175		1	1 $1.33 10 $1.33 100 $1.25 1000 $1.13 10000 $1.13	Buy Now
EBV Elektronik	IAUA180N08S5N026AUMA1			27 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 180N price and stock on Findchips.com

180N Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
180NQ	International Rectifier	Schottky Rectifier	Original	PDF
180NQ035	International Rectifier	35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package	Original	PDF
180NQ035	International Rectifier	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 35V 180A HALF-PAK	Original	PDF
180NQ035	Microsemi	Schottky Rectifier	Scan	PDF
180NQ035	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
180NQ035-1	SMC Diode Solutions	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 35V 180A PRM1-1	Original	PDF
180NQ040	International Rectifier	40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package	Original	PDF
180NQ040	Microsemi	Schottky Rectifier	Scan	PDF
180NQ040	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
180NQ040-1	SMC Diode Solutions	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 180A PRM1-1	Original	PDF
180NQ045	International Rectifier	45V 180A Schottky Discrete Diode in a D-67 HALF-Pak package	Original	PDF
180NQ045	International Rectifier	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 180A HALF-PAK	Original	PDF
180NQ045	Microsemi	Schottky Rectifier	Scan	PDF
180NQ045	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

180NQ045-1	SMC Diode Solutions	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 45V 180A PRM1-1	Original	PDF
180NQ045R	International Rectifier	45V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package	Original	PDF
180NQ045R	International Rectifier	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 45V 180A HALF-PAK	Original	PDF
180NQ045R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
180NQ... Series	International Rectifier	SCHOTTKY RECTIFIER 180 Amp	Original	PDF

180N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
I 508 V Abstract: 180N15P IXTK180N15P Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous	Original	PDF	180N15P I 508 V 180N15P IXTK180N15P
Untitled Abstract: No abstract text available Text: Pulse Jack SMT Power Inductors Power Beads - PA3779.XXXHL Series Electronics Current Rating: Over 86 Apk Inductance Range: 180nH to 350nH Height: 8.0 mm Max Footprint: 11.4mm x 7.0mm Max Halogen Free Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7	Original	PDF	PA3779 180nH 350nH 141HL 181HL 241HL
680-W Abstract: 180N15P IXFN180N15P Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous	Original	PDF	180N15P 03-23-06-C 680-W 180N15P IXFN180N15P
1N914 Abstract: M2764A M27C64A Text: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■	Original	PDF	M2764A 180ns M2764A M27C64A 1N914
Delta Electronics dps -300HB A Abstract: Delta Electronics dps -350MB A Delta Electronics DPS 350MB SFX12V Delta Electronics dps 100 Delta Electronics DPS-300HB Text: w w w. d e l t a w w. c o m DPS-180NB Series 80 W x 52 (H) x 210 (L) mm FEATURES Output V1 V2 V3 V4 V5 ELECTRICAL SPECIFICATIONS ENVIRONMENTAL FlexATX Complies with SFX12V V2.1 Remote On/Off High Reliability Low Acoustic Noise Built-in EMI Filter Meets IEC 60950: 1999/UL 60950 3rd Edition	Original	PDF	DPS-180NB SFX12V 1999/UL 115Vac 2100Vac 100mS 500mS, Delta Electronics dps -300HB A Delta Electronics dps -350MB A Delta Electronics DPS 350MB Delta Electronics dps 100 Delta Electronics DPS-300HB
180N055T Abstract: No abstract text available Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	180N055T O-220 180N055T
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1	Original	PDF	ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS	Original	PDF	180N06 180N06 247TM O-264
180N10 Abstract: No abstract text available Text: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient	Original	PDF	180N10 180N10 247TM O-264
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFK 180N07 IXFX 180N07 HiPerFETTM Power MOSFETs RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM 70 70 V V Continuous Transient ±20 ±30 V	Original	PDF	180N07 180N07 247TM O-264
HCF4585B Abstract: HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1 Text: HCC/HCF4585B 4-BIT MAGNITUDE COMPARATOR . . . . . EXPANSION TO 8, 12, 16 . 4 N BITS BY CASCADING UNITS MEDIUM-SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns typ. AT 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V, AND 15V PARAMETRIC RATINGS	Original	PDF	HCC/HCF4585B 180ns 100nA HCC4585BF HCF4585BM1 HCF4585BEY HCF4585BC1 HCC4585B HCF4585B HCC4585B HCC4585BF HCF4585BC1 HCF4585BEY HCF4585BM1
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	PDF	180N10 OT-227 E153432 125OC
Untitled Abstract: No abstract text available Text: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK1608R18J-T Features Item Summary 180nH(±5%), 300mA, 8, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table	Original	PDF	HK1608R18J-T 180nH( 300mA, 4000pcs 50MHz 300mA 400MHz
180n15p Abstract: 180N15 PLUS247 IXFX180N15P Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	180N15P -55ombs 180n15p 180N15 PLUS247 IXFX180N15P

Untitled Abstract: No abstract text available Text: VS-180NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability	Original	PDF	VS-180NQ045PbF E222165 VS-180NQ. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
HCF4585B Abstract: No abstract text available Text: HCF4585B 4-BIT MAGNITUDE COMPARATOR • ■ ■ ■ ■ ■ ■ ■ EXPANSION TO 8, 12, 16.4 N BITS BY CASCADING UNIT MEDIUM SPEED OPERATION : COMPARES TWO 4-BIT WORDS IN 180ns Typ. at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO	Original	PDF	HCF4585B 180ns 100nA JESD13B HCF4585B
180N10 Abstract: 125OC Text: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V	Original	PDF	180N10 125OC 180N10 125OC
180N06 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS	Original	PDF	180N06 180N06 247TM O-264
ixfn 180n20 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200	Original	PDF	180N20 OT-227 ixfn 180n20
TSOP 2-44 Abstract: km68 Text: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g	OCR Scan	PDF	V4000AL 512Kx8 100ns 180nW 144mW/MHz KM68V4000ALG/ALG-L 525mii) KM68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L TSOP 2-44 km68
180NQ Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER bSE D WÊÊ 4Ö55452 DOlTMm Slb M I N R PD-2.227A International Rectifier i s o n q . s e r i e s SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features Characteristics 180NQ. Units lF AV Rectangular	OCR Scan	PDF	180NQ. 180Apk TJ-125Â D-379 D-380 180NQ
Untitled Abstract: No abstract text available Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)	OCR Scan	PDF	2SK1266 180ns 2SKi266
Untitled Abstract: No abstract text available Text: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC	OCR Scan	PDF	KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD
2SK1267 Abstract: SC-65 Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.	OCR Scan	PDF	2SK1267 180ns 0D171ba -25tH 2SK1267 SC-65

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180N Search Results

180N Result Highlights (5)

180N Price and Stock

TAIYO YUDEN LSMCA160808T180NGR

Infineon Technologies AG IPD180N10N3GATMA1

Vishay Siliconix SIHD180N60E-GE3

Nisshinbo Micro Devices R1180N331B-TR-FE

Infineon Technologies AG IAUA180N08S5N026AUMA1

180N Datasheets (19)

180N Datasheets Context Search

I 508 V

Untitled

680-W

1N914

Delta Electronics dps -300HB A

180N055T

Untitled

Untitled

180N10

Untitled

HCF4585B

Untitled

Untitled

180n15p

Untitled

HCF4585B

180N10

180N06

ixfn 180n20

TSOP 2-44

180NQ

Untitled

Untitled

2SK1267