c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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transistor 1850
Abstract: transistor s 623 1850 transistor
Text: 1719-35 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz Preliminary Issue GENERAL DESCRIPTION CASE OUTLINE The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1725 -1850 MHz. This transistor is
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1850MHz,
transistor 1850
transistor s 623
1850 transistor
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Untitled
Abstract: No abstract text available
Text: !" PRELIMINARY DATASHEET WS1413 Power Amplifier Module for CDMA PCS 1850-1910MHz DATASHEET (DEVICE : WS1413, 4x4 US-PCS PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-14 !" PRODUCT DESCRIPTION WS1413 Power Amplifier Module for CDMA PCS (1850-1910MHz)
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WS1413
1850-1910MHz)
WS1413,
WM0501-14
10pin
1850-1910MHz
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ACPM5
Abstract: No abstract text available
Text: ACPM-5202 UMTS Band2 1850-1910MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The
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ACPM-5202
1850-1910MHz)
ACPM-5202
10-pin
1850-1910MHz
28dBm
Rel99)
50ohm
ACPM5
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1718-32L
Abstract: No abstract text available
Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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1718-32L
1718-32L
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smd transistor rc1
Abstract: SMD MARKING CODE g25 SMD Transistor g25 ACPM5 AVAGO PA LTE
Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1915MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 (1850-1910MHz)
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ACPM-5002-TR1
1850-1915MHz)
ACPM-5002-TR1
10-pin
1850-1910MHz)
50ohm
AV02-2477EN
smd transistor rc1
SMD MARKING CODE g25
SMD Transistor g25
ACPM5
AVAGO PA LTE
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100 watt transistor
Abstract: No abstract text available
Text: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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1850MHz,
100 watt transistor
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CX77107
Abstract: ACP1H
Text: DATA SHEET CX77107: PA Module for CDMA / PCS 1850–1910 MHz The CX77107 Power Amplifier Module (PAM) is a fully matched 10-pin surface mount module developed for Personal Communications Service (PCS) and Wireless Local Loop (WLL) applications. This small and efficient Power Amplifier packs full 1850–1910 MHz
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CX77107:
CX77107
10-pin
ACP1H
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capacitor 226 20V
Abstract: ECJ-1VB1H102K RMPA2265 SN63 SN96
Text: RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description Features The RMPA2265 power amplifier module PAM is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to
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RMPA2265
RMPA2265
capacitor 226 20V
ECJ-1VB1H102K
SN63
SN96
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umts uplink
Abstract: No abstract text available
Text: ACPM-5202 UMTS Band2 1850-1910MHz 3x3mm Power Amplifier Module Data Sheet Description The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The ACPM-5202 meets stringent UMTS linearity requirements
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ACPM-5202
1850-1910MHz)
ACPM-5202
10-pin
1850-1910MHz
28dBm
Rel99)
50ohm
umts uplink
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LME49830
Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .
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SNAA058B
AN-1850
LME49830TB
LME49830
an1850
150W TRANSISTOR AUDIO AMPLIFIER
LM49830
SNAA058B
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Untitled
Abstract: No abstract text available
Text: Model 511075 COAXIAL RESONATOR OSCILLATOR 1850 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL
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MLO81100-01810
Abstract: No abstract text available
Text: Preliminary Specifications Surface Mount Voltage Controlled Oscillator PCS 1770 - 1850 MHz MLO81100-01810 V1.00 LSM1 Package Features ● ● ● ● Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Highly Linear Tuning 4.0 12.7 11.8
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MLO81100-01810
MLO81100-01810
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TRANSISTOR SMD MARKING CODE WM
Abstract: TRANSISTOR WM 9 smd electrolytic capacitors marking
Text: !" PRELIMINARY DATASHEET WS2411 Power Amplifier Module for UMTS1900 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS2411, 4x4 UMTS1900 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-06 !" PRODUCT DESCRIPTION
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WS2411
UMTS1900
1850-1910MHz)
WS2411,
UMTS1900
WM-0409-06
TRANSISTOR SMD MARKING CODE WM
TRANSISTOR WM 9
smd electrolytic capacitors marking
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SKY77157
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SUMMARY SKY77157: Smart System PA Module for CDMA / PCS 1850–1910 MHz APPLICATIONS • Personal Communications Services (PCS) • Full U.S. PCS coverage • Wireless local loop (WLL) FEATURES • Low voltage positive bias supply
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SKY77157:
10-pin
IS95/CDMA2000/EVDO
SKY77157
10-pin
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murata REEL label lot number
Abstract: TRANSISTOR SMD MARKING CODE WM ROHM polystyrene capacitor WS1401 smd transistor marking PA IPC-7711 smd rf transistor marking SMT code WM
Text: !" PRELIMINARY DATASHEET WS1401 Power Amplifier Module for CDMA PCS 1850-1910MHz DATASHEET (DEVICE : WS1401, 3x3 US PCS PAM) Issued Date : January 21, 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM-0501-10 !" PRODUCT DESCRIPTION WS1401
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WS1401
1850-1910MHz)
WS1401,
WM-0501-10
1850-1910MHz
murata REEL label lot number
TRANSISTOR SMD MARKING CODE WM
ROHM polystyrene capacitor
smd transistor marking PA
IPC-7711
smd rf transistor marking
SMT code WM
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IPC-7721
Abstract: J-STD-033 PCB JEDEC J-STD-033 TAPE AND REEL IPC-7711
Text: !" PRELIMINARY DATASHEET WS1411 Power Amplifier Module for CDMA PCS 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS1411, 4x4 US PCS PAM) Issued Date : July 5th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0407-03 !" PRODUCT DESCRIPTION
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WS1411
1850-1910MHz)
WS1411,
WM-0407-03
10pin
1850-1910MHz
IPC-7721
J-STD-033 PCB
JEDEC J-STD-033 TAPE AND REEL
IPC-7711
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Untitled
Abstract: No abstract text available
Text: 1719-8 8 Watts, 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and
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Untitled
Abstract: No abstract text available
Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and
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Untitled
Abstract: No abstract text available
Text: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W Gain 6.0 dB min. Silicon Nitride Passivated
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PTB20156B
PTB20156B
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transistor 1850
Abstract: No abstract text available
Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
transistor 1850
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RF POWER TRANSISTOR NPN
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP
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N4050
Abstract: 1350 transistor
Text: ERICSSON $ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Preliminary Key Features Description • • • • • The 20156 is a class C, NPN, common base RF PowerTransistor intended for 22 VDC operation across the 1350 -1850 MHz frequency band. It is rated at 8 Watts minimum output power
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