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    Integrated Control Technology Limited PEEL18CV8P-25

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    Bristol Electronics PEEL18CV8P-25 2,624
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    Quest Components PEEL18CV8P-25 2,259
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    PEEL18CV8P-25 2,099
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    International CMOS Technology PEEL18CV8P-15

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    Integrated Control Technology Limited PEEL18CV8T7

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    Integrated Control Technology Limited ICT18CV8J-15

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    Integrated Circuit Technology Corp PEEL18CV8J-25

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    18CV8 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    18CV8 Unknown CMOS Programmable Electrically Erasable Logic Device Original PDF

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    PAL16V8

    Abstract: 18CV8Z PEEL18CV8ZJ-25
    Text: To Notfind recommended out if the package for New you designs need isavailable, contactcontact factoryCustomer for availability Service PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10%


    Original     		PDF 18CV8Z PAL16V8 PEEL18CV8ZJ-25

    ICT 18CV8

    Abstract: 18CV8 PEEL18CV8P-15 ICT 20 PIN PLASTIC 300 MIL DIP programmer EPLD 18cv8 programming free circuit eeprom programmer PEEL18CV PEEL18CV8J-5 PEEL18CV8P-7
    Text: Commercial/ Industrial PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz - Commercial and industrial versions available


    Original     		PDF 18CV8 25MHz 20-pin ICT 18CV8 PEEL18CV8P-15 ICT 20 PIN PLASTIC 300 MIL DIP programmer EPLD 18cv8 programming free circuit eeprom programmer PEEL18CV PEEL18CV8J-5 PEEL18CV8P-7

    ICT 18CV8Z

    Abstract: ICT PEEL18CV8ZP-25 18CV8Z-25 16V8 18CV8 PAL16V8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZJI-25
    Text: Commercial PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing


    Original     		PDF 18CV8Z-25 20-pin PEEL18CV8ZJ-25 PEEL18CV8ZS-25 PEEL18CV8ZT-25 PEEL18CV8ZPI-25 PEEL18CV8ZJI-25 ICT 18CV8Z ICT PEEL18CV8ZP-25 18CV8Z-25 16V8 18CV8 PAL16V8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZJI-25

    ict peel 18cv8

    Abstract: 18CV8 International CMOS Technology PEEL18CV8P-10 ICT Peel PEEL programming 18cv8 programming International CMOS Technology PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV8PI-25
    Text: International CMOS Technology Commercial/ Industrial PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz


    Original     		PDF 18CV8 25MHz 20-pin 04-02-004H ict peel 18cv8 International CMOS Technology PEEL18CV8P-10 ICT Peel PEEL programming 18cv8 programming International CMOS Technology PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV8PI-25

    PAL16V8

    Abstract: 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 18CV8Z-25
    Text: PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing


    Original     		PDF 18CV8Z-25 20-pin PEEL18CV8ZJ-25 PEEL18CV8ZS-25 PEEL18CV8ZT-25 PEEL18CV8ZPI-25 PEEL18CV8ZJI-25 PAL16V8 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 18CV8Z-25

    PAL16V8

    Abstract: 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 PEEL18CV8ZJ25 PEEL18CV8ZP-25L
    Text: PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz Architectural Flexibility - Enhanced architecture fits in more logic


    Original     		PDF 18CV8Z PAL16V8 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 PEEL18CV8ZJ25 PEEL18CV8ZP-25L

    pal16v8

    Abstract: dec mer PEEL18CV8ZP-25L
    Text: ic PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz Architectural Flexibility - Enhanced architecture fits in more logic


    Original     		PDF 18CV8Z Pro1-9600 pal16v8 dec mer PEEL18CV8ZP-25L

    18CV8

    Abstract: PEEL18CV8J-7 PEEL18CV8P-7 PEEL18CV8S-7 PEEL18CV8P-10
    Text: PEEL 18CV8 -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 7ns to 25 ns - Power as low as 37mA at 25MHz - Commercial and industrial versions available


    Original     		PDF 18CV8 25MHz 20-pin PEEL18CV8J-7 PEEL18CV8P-7 PEEL18CV8S-7 PEEL18CV8P-10

    PEEL18CV8P-15

    Abstract: PEEL18CV8S-7
    Text: Not recommended for New designs contact factory for availability PEEL 18CV8 -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility - Enhanced architecture fits in more logic - 74 product terms x 36 input AND array


    Original     		PDF 18CV8 25MHz PEEL18CV8P-15 PEEL18CV8S-7

    PEEL18CV8P-15

    Abstract: PEEL18CV8J-10 PEEL18CV8P 18CV8 PEEL18CV8P-25L PEEL18CV PEEL18CV8J-25 PEEL18CV8JI-25 PEEL18CV8P-25 PEEL18CV8J-7
    Text: PEEL 18CV8 -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility - Enhanced architecture fits in more logic - 74 product terms x 36 input AND array - 10 inputs and 8 I/O pins - 12 possible macrocell configurations


    Original     		PDF 18CV8 25MHz PEEL18CV8P-15 PEEL18CV8J-10 PEEL18CV8P PEEL18CV8P-25L PEEL18CV PEEL18CV8J-25 PEEL18CV8JI-25 PEEL18CV8P-25 PEEL18CV8J-7

    18cv8z-25

    Abstract: PEELTM18CV8Z PEEL18CV8ZJI PEEL18CV8ZJI-25
    Text: Commercial PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing


    Original     		PDF 18CV8Z-25 PEEL18CV8ZP-25 PEEL18CV8ZJ-25 PEEL18CV8ZS-25 PEEL18CV8ZT-25 PEEL18CV8ZPI-25 PEEL18CV8ZJI-25 PEEL18CV8ZSI-25 PEEL18CV8ZTI-25 20-pin PEELTM18CV8Z PEEL18CV8ZJI

    hy18cv8s

    Abstract: low cost eeprom programmer circuit diagram altera EP300 Altera ep310 EP300 HYUNDAI i10 10L8 16H8 HY18CV8 R1-48-*-F
    Text: AL 18CV8 HYUNDAI SEMICONDUCTOR CMOS EEPLD DESCRIPTION FEATURES T he H Y 18CV8 is a CM O S E lectrically E ra sa­ ble P rogram m able Logic Device E E P L D th at provides a high perform ance; low power, re­ program m able and architecturally flexible alter­


    OCR Scan     		PDF HY18CV8 Y18CV8 HY18CV8 20pin hy18cv8s low cost eeprom programmer circuit diagram altera EP300 Altera ep310 EP300 HYUNDAI i10 10L8 16H8 R1-48-*-F

    Untitled

    Abstract: No abstract text available
    Text: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology


    OCR Scan     		PDF 18CV8Z-25 20-Pin 0001fl3fl 407D7

    ICT 18CV8

    Abstract: No abstract text available
    Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options Architectural Flexibility - Vcc = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz


    OCR Scan     		PDF 18CV8 25MHz 20-pin ICT 18CV8

    Untitled

    Abstract: No abstract text available
    Text: S4E D 4ÖM0707 0001037 3t>2 « I C T I C T INC Preliminary Information INC. PEEL 18CV8L-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — Independently programmable 12-con­


    OCR Scan     		PDF M0707 18CV8L-15 12-con 25MHz

    18CV8

    Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
    Text: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI 18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 18CV8 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 AMI PEEL18CV8

    Untitled

    Abstract: No abstract text available
    Text: • > GOULD AMI CM OS Programmable Electrically Erasable Logic Device Prelim inary Data Sheet Semiconductors PEEL 18CV8-10 Features — Synchronous preset, asynchronous clear — Independent output enables • A dvanced C M O S E EPRO M Technology • A pplication Versatility


    OCR Scan     		PDF 18CV8-10 120mA PEEL18CV8

    Untitled

    Abstract: No abstract text available
    Text: A im • P EEL 18CV8L STANDARD PRODUCTS American Microsystems, Inc. March 1994 CMOS Programmable E lectrically Erasable Logic Device Features General Description The AMI 18CV8L is a low voltage CMOS Programmable Electrically Erasable Logic device that


    OCR Scan     		PDF 18CV8L PEEL18CV8L

    Untitled

    Abstract: No abstract text available
    Text: HÔM07Ü7 0Q003SD 7 M I C I 37E D INTERNATIONAL C M O S Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T -4 6 -1 9 - o T 18CV8-1 0/PEECm 18CV8-12 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • 1-Micron CMOS EEPROM Technology


    OCR Scan     		PDF 0Q003SD PEEC18CV8-1 0/PEECm8CV8-12 12-configuration 18CV8P-10 18CV8P-12 PEEL18CV8

    Untitled

    Abstract: No abstract text available
    Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • - ■ Architectural Flexibility Multiple Speed Power, Temperature Options - Enhanced architecture fits in m ore logic - 74 product te rm s x 36 input AN D array


    OCR Scan     		PDF 18CV8 20-Pin 0001fl3fl 407D7

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL. 18CV8 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — Independent configurable I/O macro cells — Synchronous preset, asynchronous clear


    OCR Scan     		PDF 18CV8

    PEEL18CV815

    Abstract: No abstract text available
    Text: ET INC. PEEL 18CV8-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • Industrial Grade Operation — — — Low Power Consumption — — CMOS:9C mA standby +0.5m A/M Hz max TTL: 105mA standby + 0.5mA/MHz max —


    OCR Scan     		PDF 18CV8-15 105mA V8-15: PEEL18CV815

    ICT 20 PIN PLASTIC 300 MIL DIP

    Abstract: ICT PEEL18CV8ZP-25 18cv8z
    Text: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 pA typical at standby - Ice = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology


    OCR Scan     		PDF 18CV8Z-25 ouZJ-25 EEL18C V8ZS-25 PEEL18CV8ZT-25 PEEL18CV8ZPI-25 EL18CV8ZJI-25 PEEL18CV8ZSI-25 PEEL18CV8ZTI-25 20-pin ICT 20 PIN PLASTIC 300 MIL DIP ICT PEEL18CV8ZP-25 18cv8z

    18CV825

    Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
    Text: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI 18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 464C2 480Kfi D014273 18CV825 PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell 18CV8-15