44-PIN
Abstract: M48T129V M48T129Y
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
44-PIN
M48T129V
M48T129Y
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SUM60N10-17
Abstract: No abstract text available
Text: SUM60N10-17 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 60 0.019 @ VGS = 6 V 56 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package
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SUM60N10-17
O-263
08-Apr-05
SUM60N10-17
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
SOH28
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Si2301
Abstract: Si2301BDS
Text: Si2301BDS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = -4.5 V -2.4 0.150 @ VGS = -2.5 V -2.0 VDS (V) -20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301BDS
O-236
OT-23)
Si2301
S-22048--Rev.
18-Nov-02
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THE M48Z
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
THE M48Z
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Si6969BDQ
Abstract: No abstract text available
Text: Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.030 @ VGS = -4.5 V -4.6 0.040 @ VGS = -2.5 V - 3.8 0.055 @ VGS = -1.8 V - 3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969BDQ G1 8 D2 7 S2
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Si6969BDQ
08-Apr-05
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Si6969BDQ
Abstract: No abstract text available
Text: Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.030 @ VGS = -4.5 V -4.6 0.040 @ VGS = -2.5 V - 3.8 0.055 @ VGS = -1.8 V - 3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969BDQ G1 8 D2 7 S2
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Si6969BDQ
S-22051--Rev.
18-Nov-02
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FP201
Abstract: FP200 FP202
Text: FP200, 201, 202 Vishay Thin Film Hermetic Flat-Pak Resistor Networks FEATURES Product may not be to scale Vishay Thin Film offers a broad line of precision resistor networks in hermetic Flat-Packs for surface mount requirements in military, space or other harsh environmental
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FP200,
18-Nov-02
FP201
FP200
FP202
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44-PIN
Abstract: M48T129V M48T129Y M48T201Y SOH44 129Y
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL YEAR 2000 COMPLIANT
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
44-PIN
M48T129V
M48T129Y
M48T201Y
SOH44
129Y
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44-PIN
Abstract: M48T129V M48T129Y SOH44 TSOP32
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
44-PIN
M48T129V
M48T129Y
SOH44
TSOP32
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15-V
Abstract: DG411HS DG412HS DG413HS 412HS
Text: DG411HS/412HS/413HS New Product Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance—r DS on : 25 W Fast Switching—tON: 68 ns
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DG411HS/412HS/413HS
DG411HS
HP4192A
S-22064--Rev.
18-Nov-02
15-V
DG412HS
DG413HS
412HS
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Untitled
Abstract: No abstract text available
Text: DG411HS/412HS/413HS New Product Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance—r DS on : 25 W Fast Switching—tON: 68 ns
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DG411HS/412HS/413HS
DG411HS
08-Apr-05
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M48Z128
Abstract: M48Z128V M48Z128Y SOH28 TSOP32
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
SOH28
TSOP32
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M48Z512A
Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
M48Z512A
M48Z512AV
M48Z512AY
M4Z32-BR00SH1
SOH28
M48Z51
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Untitled
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
D 4242
CP1621
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1N5817
Abstract: AN1012 M48Z512A M48Z512AV M48Z512AY M48Z512BV M68XXX
Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV*
M48Z512A:
M48Z512AY:
M48Z512AV:
M48Z512A/Y/V
304-bit
1N5817
AN1012
M48Z512A
M48Z512AV
M48Z512AY
M48Z512BV
M68XXX
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22062
Abstract: No abstract text available
Text: Si4423DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.0075 @ VGS = -4.5 V -14 0.009 @ VGS = -2.5 V - 13 0.0115 @ VGS = -1.8 V - 12 D TrenchFETr Power MOSFET APPLICATIONS D Game Station - Load switch
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Si4423DY
S-22062--Rev.
18-Nov-02
22062
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Si4804BDY
Abstract: No abstract text available
Text: Si4804BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FET Power MOSFET? D PWM Optimized APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter
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Si4804BDY
S-22049--Rev.
18-Nov-02
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WinFlink.exe
Abstract: UM0050 programming 80c51 counter with 7 segment lcd UPSD3251F dongle diagram flow design UPSD325X uPSD32xx nec mcu ABEL-HDL Reference Manual cut template DRAWING
Text: UM0050 USER MANUAL PSDsoft Express Design Software Tool for PSD and uPSD Families INTRODUCTION PSDsoft Express is the design software for the PSD and uPSD Programmable System Device families of parts. This new design tool allows you to easily integrate a PSD/uPSD into your design using a simple
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UM0050
WinFlink.exe
UM0050
programming 80c51 counter with 7 segment lcd
UPSD3251F
dongle diagram flow design
UPSD325X
uPSD32xx
nec mcu
ABEL-HDL Reference Manual
cut template DRAWING
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S-22063
Abstract: SUM60N10-17
Text: SUM60N10-17 New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 60 0.019 @ VGS = 6 V 56 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package
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SUM60N10-17
O-263
S-22063--Rev.
18-Nov-02
S-22063
SUM60N10-17
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M40Z300
Abstract: M48Z512A M48Z512AV M48Z512AY
Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z512A
M48Z512AY,
M48Z512AV*
32-pin
M48Z512A:
M48Z512AY:
M48Z512AV:
M40Z300
M48Z512A
M48Z512AV
M48Z512AY
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M48Z128
Abstract: M48Z128V M48Z128Y M40Z300
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
M40Z300
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re 04501
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - n 3 RELEASED TOR PUBLICATION “ f “ ALL RIGHT5 RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC DIST AF 50 LTR DESCRIPTION DATE REVISED PER 0 G 3 A - 0 6 9 2 - 0 2 4.32 [.1 70] D -34.92 [1 .375] 1 CONTINUOUS STRIP ON REELS.
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0G3A-0692-02
18NOV02
18NOV2002
18N0V2002
31MAR2000
re 04501
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