196N10NS Search Results

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Infineon Technologies AG BSC196N10NSGATMA1 MOSFET N-CH 100V 8.5A/45A TDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSC196N10NSGATMA1	Digi-Reel	45,761		1	1 $1.78 10 $1.134 100 $1.78 1000 $0.5521 10000 $0.50901	Buy Now
	BSC196N10NSGATMA1	Cut Tape	45,761		1	1 $1.78 10 $1.134 100 $1.78 1000 $0.5521 10000 $0.50901	Buy Now
	BSC196N10NSGATMA1	Reel	40,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.46725	Buy Now
Avnet Americas	BSC196N10NSGATMA1	Reel		16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	BSC196N10NSGATMA1	Bulk	4,046		1	1 $1.3 10 $1.06 100 $0.825 1000 $0.537 10000 $0.486	Buy Now
Bristol Electronics	BSC196N10NSGATMA1		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	BSC196N10NSGATMA1	Cut Tape	17,634			1 - 10 $0.926 100 $0.65 1000 $0.433 10000 $0.37	Buy Now

EBV Elektronik	BSC196N10NSGATMA1			17 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	BSC196N10NSGATMA1		23,270			1 - 10 - 100 $0.7169 1000 $0.478 10000 $0.478	Buy Now
Infineon Technologies AG BSC196N10NS G MOSFETs N-Ch 100V 45A TDSON-8 OptiMOS 2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BSC196N10NS G		3,895			1 $1.24 10 $0.965 100 $0.678 1000 $0.471 10000 $0.467	Buy Now
Bristol Electronics	BSC196N10NS G		459			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Velocity Electronics	BSC196N10NS G		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

196N10NS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
196n10ns Abstract: No abstract text available Text: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	BSC196N10NS 196N10NS 196n10ns	PDF
196n10ns Abstract: BSC196N10NS G IEC61249-2-21 JESD22 BSC196N10NSG BSC196 BSC196N10 BSC196N10NS Text: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature	Original	BSC196N10NS IEC61249-2-21 196N10NS 100act 196n10ns BSC196N10NS G IEC61249-2-21 JESD22 BSC196N10NSG BSC196 BSC196N10	PDF
196n10ns Abstract: JESD22 BSC196N10NS Text: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	BSC196N10NS 196N10NS 45act 196n10ns JESD22	PDF
196n10ns Abstract: No abstract text available Text: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	BSC196N10NS 196N10NS 196n10ns	PDF