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    1982B Search Results

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    1982B Price and Stock

    Vishay Dale RN55C1982BBSL

    RES 19.8K OHM 1/8W .1% AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RN55C1982BBSL Bulk 100
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    • 100 $3.4459
    • 1000 $3.4459
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    Vishay Dale RN55E1982BB14

    RES 19.8K OHM 1/8W .1% AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RN55E1982BB14 Bulk 100
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    • 100 $2.9557
    • 1000 $2.9557
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    Vishay Dale RNC60H1982BSRE7

    RES 19.8K OHM 0.1% 1/4W AXIAL
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    DigiKey RNC60H1982BSRE7 Reel 1,500
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    Vishay Dale RNC60J1982BSRE7

    RES 19.8K OHM 0.1% 1/4W AXIAL
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    DigiKey RNC60J1982BSRE7 Reel 1,500
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    KOA Speer Electronics Inc RN731ETTP1982B25

    RES 19.8K OHM 0.1% 1/16W 0402
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    DigiKey RN731ETTP1982B25 Reel
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    1982B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM256Q16T

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256Q16 EM256Q16 Family 256Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256Q16 is an integrated memory device containing a low power 4 Mbit Static Random


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    PDF 1982B EM256Q16 EM256Q16 256Kx16bit EM256V16 EM256Q16B EM256Q16T EM256Q16T

    N16T1618C2A

    Abstract: N16T1625C2A N16T1630C2A 1024Kx16bit
    Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2 1 A N16T1625C2(1)A N16T1618C2(1)A Advance 1024Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N16T1630C2A, N16T1625C2A


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    PDF 1982B N16T1630C2 N16T1625C2 N16T1618C2 1024Kx16bit N16T1630C2A, N16T1625C2A N16T1618C2A N16T1625C2A N16T1630C2A

    Untitled

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N08T1630C2 1 A N08T1625C2(1)A N08T1618C2(1)A Advance 512Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N08T16xxC2A, is a family of integrated memory devices containing a low power 8 Mbit SRAM


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    PDF 1982B N08T1630C2 N08T1625C2 N08T1618C2 512Kx16bit N08T16xxC2A,

    EM256Q16T

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256Q16 EM256Q16 Family 256Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256Q16 is an integrated memory device containing a low power 4 Mbit Static Random


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    PDF 1982B EM256Q16 EM256Q16 256Kx16 EM256V16 EM256Q16T

    1962a

    Abstract: lt1196 LTC1196 LTC1196-1AC LTC1196-1BC LTC1196-2AC LTC1198 LTC1198-1AC LTC1198-1BC LTC1198-2AC
    Text: LTC1196/LTC1198 8-Bit, SO-8, 1MSPS ADCs with Auto-Shutdown Options U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Sampling Rates: 1MHz LTC1196 750kHz (LTC1198) Low Cost SO-8 Plastic Package Single Supply 3V and 5V Specifications


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    PDF LTC1196/LTC1198 LTC1196) 750kHz LTC1198) 1962a lt1196 LTC1196 LTC1196-1AC LTC1196-1BC LTC1196-2AC LTC1198 LTC1198-1AC LTC1198-1BC LTC1198-2AC

    MIL-PRF-5606

    Abstract: MIL-PRF-7808 AS81531 skydrol 500-b4 LQ590 RW-2513 SAE-AS81531 TMS-SYSTEM-SIX-RIBBON-A SAE-AS-8243 1982BK04-RIBBON
    Text: TECHNICAL DATA SHEET Document number: TTDS-021 Issue: 3 Date: Nov’ 2008 CM-SCE CABLE MARKER DESCRIPTION: Extruded radiation cross-linked flame retarded polyolefin sheet, formed into punched organized cable markers. USE: Identification of cables and wire bundles by computer-based printing onto markers.


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    PDF TTDS-021 LQ590 AM6310 1982BK04-RIBBON LMS6000, LMS9000 MIL-PRF-5606 MIL-PRF-7808 AS81531 skydrol 500-b4 RW-2513 SAE-AS81531 TMS-SYSTEM-SIX-RIBBON-A SAE-AS-8243

    AVR314

    Abstract: pwm avr c language AT90S4414 DTMF STK200 pwm Sine wave generation 1982B PWM generator by using microcontroller atmel sine wave pwm circuit AT90S4414 STK500
    Text: AVR314: DTMF Generator 8-bit Microcontroller Features • • • • • • Generation of Sine Waves Using PWM Pulse-Width Modulation Combine Different Sine Waves to DTMF Signal Assembler and C High-level Language Code STK500 Top-Module Design 260 Bytes Code Size/128 Bytes Constants Table Size


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    PDF AVR314: STK500 Size/128 1982B AVR314 pwm avr c language AT90S4414 DTMF STK200 pwm Sine wave generation PWM generator by using microcontroller atmel sine wave pwm circuit AT90S4414

    uP 1981A

    Abstract: dg1u TMS320C25 schematic
    Text: / T i i n ü N ß _ LTC1196/LTC1198 TECHNOLOGY g-Bit, SO-8, 1MSPS ADCs with Auto-Shutdown Options F6DTURCS DCSCRIPTIOn • High Sampling Rates: 1MHz LTC1196 750kHz(LTC1198) ■ Low Cost ■ SO-8 Plastic Package ■ Single Supply 3V and 5V Specifications


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    PDF LTC1196/LTC1198 600ns, LTC1198 LTC1196 16-BIT TMS320C25 uP 1981A dg1u TMS320C25 schematic

    mt1198

    Abstract: MT119
    Text: i \ m \ LTCl 196/LTC1198 a TECH N O LO G Y 8-Bit, SO-8. 1MSPS AD Cs with Auto-Shutdown Options FCRTURCS DCSCRIPTIOn • High Sampling Rates: 1MHz LTC1196 750kHz(LTC1198) ■ Low Cost ■ SO-8 Plastic Package ■ Single Supply 3V and 5V Specifications ■ Low Power: 10mW at 3V Supply


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    PDF 196/LTC1198 LTC1196/LTC1198 600ns, LTC1198 LTC1196 mt1198 MT119

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p