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    198A854 Search Results

    198A854 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    198A854 BAE Systems 128K x 72 x 2 Radiation Hardened Static RAM MCM - 3.3 V Original PDF

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    198A854

    Abstract: BAE Systems DQ72
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		198A854 1x106 1x1014 1x109 1x10-11 1x1012 308-Lead AS9000, 198A854 BAE Systems DQ72 PDF

    a3050

    Abstract: 86-65-3 D0950
    Text: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		198A854 308-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, a3050 86-65-3 D0950 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128K x 72 × 2 Radiation Hardened Static RAM MCM – 3.3 V 198A854 Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.5 µm Process • Read/Write Cycle Times ≤50 ns, -30°C to 90°C • Total Dose Hardness through 1×106 rad(Si)


    Original     		198A854 308-Lead AS9000, PUBS-01-B22-Q-013 MVA01-012 PDF