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    Microchip Technology Inc 1N5803

    DIODE GEN PURP 75V 1A AXIAL
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    Microchip Technology Inc 1N5803US

    DIODE GEN PURP 80V 1A D-5A
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    Microchip Technology Inc 1N5803E3

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    Microchip Technology Inc 1N5803-TR

    DIODE GEN PURP 75V 1A
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    1N5803 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5803 EIC Semiconductor Fast Recovery Glass Passivated Rectifier Diodes Original PDF
    1N5803 Microsemi Ultra Fast Rectifier (less than 100ns); Package: A; IO (A): 2.5; IFSM (A): 35; Cj (pF): 15; Vrwm (V): 75; trr (nsec): 25; VF (V): 0.875; Original PDF
    1N5803 Sussex Semiconductor .25 TO 16 Amp Standard Recovery Rectifier Flip-Die Original PDF
    1N5803 Sussex Semiconductor RECTIFIER DIE Original PDF
    1N5803 BKC International 2.5 Amp Voidless Fast Switching Rectifiers Scan PDF
    1N5803 Microsemi Rectifiers - High Efficiency, ESP, 2.5 Amp to 20 Amp Scan PDF
    1N5803 Microsemi Data Book 1983 Scan PDF
    1N5803 Unknown Silicon Diode Scan PDF
    1N5803 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5803 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5803 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1N5803 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5803 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5803 OPTEK Technology FAST RECOVERY RECTIFIERS Scan PDF
    1N5803 OPTEK Technology Fast Recovery Rectifier Scan PDF
    1N5803 Semicon Components Ultra Fast Recovery Epoxy, 2A thru 6A Axial, 50V thru 800V Scan PDF
    1N5803 Unitrode International Semiconductor Data Book 1981 Scan PDF
    1N5803US Microsemi SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS Original PDF
    1N5803US Microsemi RECTIFIERS HIGH EFFICIENCY ESP 2.5 AMP TO 20 AMP Original PDF

    1N5803 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809


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    PDF 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 1N5802 1N5807 1N5812 1N5803 1N5808 1N5813 1N5804

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    1N5806

    Abstract: 1N5806 microsemi mil-prf-19500/477
    Text: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF19500/477 and is ideal for high-reliability applications where a failure cannot be


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    PDF 1N5802 1N5806 MIL-PRF19500/477 1N5802US 1N5806US) 1N5802 1N5806 1N5806 microsemi mil-prf-19500/477

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    1N5806US

    Abstract: 1N5802US 1N5803US 1N5804US 1N5805US
    Text: Certificate : TH97/10561QM 1N5802US - 1N5806US GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes SMA DO-214AC Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current


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    PDF TH97/10561QM 1N5802US 1N5806US DO-214AC) TW00/17276EM UL94V-O 1N5806US 1N5803US 1N5804US 1N5805US

    S25400

    Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
    Text: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE


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    PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    1N5805

    Abstract: No abstract text available
    Text: 1N5802 - 1N5806 GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes DO - 41 FEATURES : * * * * * * * * Glass passivated chip High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF 1N5802 1N5806 DO-41 UL94V-O MIL-STD-202, 1N5803 1N5804 1N5805 1N5806

    100 Amp current 1000 volt diode

    Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
    Text: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS


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    PDF

    mil-prf-19500/477

    Abstract: 1N5802 1N5802US 1N5803 1N5804 1N5805 1N5806 1N5806US JANTX 1N5804
    Text: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477 and are ideal for high-reliability applications where a failure cannot be tolerated. These


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    PDF 1N5802 1N5806 MIL-PRF-19500/477 1N5802US 1N5806US) 1N5802 mil-prf-19500/477 1N5803 1N5804 1N5805 1N5806 1N5806US JANTX 1N5804

    diodo zener 5,6 v

    Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
    Text: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating


    OCR Scan
    PDF 1N5663 DO-13 1N5663A 1N5664 1N5664A IN5665 1N5665A IN5666 1N5667 IN5668 diodo zener 5,6 v in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811

    1N4942

    Abstract: 1N4944 1N4946 1N4947 1N5614 1N5616 1N5618 1N5620 1N5622 11733
    Text: B K C INTERNATIONAL 30E D • 117^3 D0D03DM 5 ■ " P 03-13 1N5614 Series • General Purpose Rectifiers in “A ” Body Package Type 1N5614 1N5616 1N5618 1N5620 1N5622 Peak Inverse Voltage MIN. PIV Breakdown VoKage (MIN.) Bv @ 50pA Average Rectified Current


    OCR Scan
    PDF 1N5614 1N5616 1N5618 1N5620 1N5622 100pA 1N5802 1N5803 1N5804 1N4942 1N4944 1N4946 1N4947 11733

    A1W TRANSISTOR

    Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
    Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201


    OCR Scan
    PDF 403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822

    MB345

    Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
    Text: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316


    OCR Scan
    PDF 1N4150 1N4150-1 MB341 MB313 1N4148 1N4148-1 MB315 MB209 MB342 MB215 MB345 MB323 MB317 ES1303 MX4115 B338 914f MX3120 MB339

    IN5809

    Abstract: 1N5815 Diode
    Text: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FE A T U R E S DESCRIPTION • • • • Th is series of High Efficiency Power Rectifiers allows c ircu it designers to design high current, high frequency sup­


    OCR Scan
    PDF 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 1N5804 1N5806 IN5809 1N58II 1N5815 Diode

    BKC Semiconductors

    Abstract: USM35
    Text: 2.5 Amp Voidless Fast Switching Rectifiers 1N5802 thru 1N5806 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power $upplies.


    OCR Scan
    PDF 1N5802 1N5806 IL-S-19500 1N5802 1N5803 1N5804 1N5805 1NS806 BKC Semiconductors USM35

    IN649

    Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
    Text: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 |iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A


    OCR Scan
    PDF 1N645 DO-35 1N645-1 1N647-1 1N649-1 1N645 1N647 BES1304 BES1305 IN649 BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020

    SD5171

    Abstract: IN6095 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151
    Text: OPTEK TECHNOLOGY INC 4&E D • L^úSflO 0001427 TTl ■ OTK FAST RECOVERY RECTIFIERS 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 T 03-15 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is


    OCR Scan
    PDF 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 ta-17( SD51I6I SD5171I6I D0-203AB IN6095 IN6096 IN6097 SD5171 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151

    1N5A

    Abstract: SUES1110G SUES1309 MN5807 1N5804 SUES1310 SUES1102 SUES1306 SUES1104 SUES1105
    Text: SEUICON COMPONENTS INC 2BE D • 0135157 0000043 fl ■ T"'03-l3 RECTIFIERS EPOXY AXIAL 800V FEATURES: d e s c r ip t io n • 2 Amp to 6 Amp Axial Leaded • 50V to 800 V PIV • 25 nS to 70 nS T RR These rectifiers are used in switching power supplies and regulators


    OCR Scan
    PDF 13S157 1N5A SUES1110G SUES1309 MN5807 1N5804 SUES1310 SUES1102 SUES1306 SUES1104 SUES1105

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


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    PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702