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    1N645 Price and Stock

    Microchip Technology Inc 1N645

    DIODE GEN PURP 225V 400MA DO35
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    Microchip Technology Inc 1N645A

    DIODE GEN PURP 225V 400MA DO35
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    Microchip Technology Inc 1N645-TR

    DIODE GP REV 225V 400MA DO35
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    Microchip Technology Inc 1N645UR-1

    DIODE GP 225V 400MA DO213AA
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    Microchip Technology Inc 1N645-1E3

    DIODE GEN PURP 225V 400MA DO35
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    1N645 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N645 Microsemi Silicon Rectifier Diode Original PDF
    1N645 Sussex Semiconductor .25 TO 16 Amp Standard Recovery Rectifier Flip-Die Original PDF
    1N645 BKC International General Purpose Silicon Rectifier, DO-35 Scan PDF
    1N645 General Diode Silicon Diode Selection Guide Scan PDF
    1N645 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    1N645 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N645 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N645 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N645 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N645 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N645 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N645 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N645 Unknown Shortform Electronic Component Datasheets Short Form PDF
    1N645 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    1N645 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
    1N645 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    1N645 Texas Instruments Discrete Devices 1978 Scan PDF
    1N645 Thomson-CSF Condensed Data Book 1977 Scan PDF
    1N645 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N645 ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF

    1N645 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS


    Original
    PDF 1N645-1N649 MIL-PRF-19500, 1N645 1N646 1N647 1N648 1N649 DO-35A

    DO-35 silicon Rectifier diodes

    Abstract: 1N649-1 1N647 1N648 1N649 DO-213AA 1N645 1N645-1 1N646 Purpose Rectifier Melf
    Text: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not


    Original
    PDF DO-35 1N645 1N645-1 1N645-1 1N649-1 DO-35 silicon Rectifier diodes 1N649-1 1N647 1N648 1N649 DO-213AA 1N646 Purpose Rectifier Melf

    Untitled

    Abstract: No abstract text available
    Text: 1N645UR-1 CDLL645 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25ºC


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    PDF 1N645UR-1 CDLL645 MIL-PRF-19500/240 IN645UR-1

    Untitled

    Abstract: No abstract text available
    Text: 1N645+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


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    PDF 1N645 Current400m Voltage225 Current15u StyleDO-14

    Untitled

    Abstract: No abstract text available
    Text: 1N645B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition).40 @Temp. (øC) (Test Condition)


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    PDF 1N645B Current400m Voltage225 Current25n

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


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    PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANS Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


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    PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


    Original
    PDF 1N645- 1N645-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35

    1N645UR-1

    Abstract: CDLL645 DO-213AA LL645
    Text: FEATURES 1N645UR-1 • 1N645UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL645, CDLL645, & MLL645 MAXIMUM RATINGS AT 25 °C


    Original
    PDF 1N645UR-1 1N645UR-1 LL645, CDLL645, MLL645 500mW 400mA, 150mA, MILPRF-19500/240 DO-213AA CDLL645 LL645

    Untitled

    Abstract: No abstract text available
    Text: 1N645-1+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


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    PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35

    1n645

    Abstract: 1N649 1n646 1n648
    Text: TYPES 1N645 THRU 1N649, 1N645A SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L -S 7 3 9 1 2 5 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 1 9 7 3 225 V to 600 V • 400 m A A V E R A G E • Rugged Double-Plug Construction m echa nica l d a ta


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    PDF 1N645 1N649, 1N645A 1N646 1N649 1n648

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


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    PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649

    JTX 1N649-1

    Abstract: DSAIH00025213 1n646
    Text: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


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    PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646

    Untitled

    Abstract: No abstract text available
    Text: JA N 1N645-1 thru JA N 1N649-1 M ierosemi Corp. f The d io a e e x p e r ts SANTA A N A, CA SC O TTSD A LE. A Z ☆JAN S* F o r m ore in fo rm a tio n call: 714 9 7 9-8220 FEA TU R ES MILITARY RECTIFIERS • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE


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    PDF 1N645-1 1N649-1 MIL-S-19500/240

    1n4948 Silicon Instrument

    Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
    Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio


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    PDF 1N483B 1N486B 1N645 1N649 MII-STD-202/208 from-65 1N4245 1N4249 1N5059 1N5062 1n4948 Silicon Instrument byw76 diodes RG3A General instrument 1n4948 byw76

    Untitled

    Abstract: No abstract text available
    Text: LL645-1 thru LL649-1 Silicon Rectifier Diodes Use Advantages E DO-213AA MELF SMD 1N645 1 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not


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    PDF LL645-1 LL649-1 DO-213AA 1N645 649UR-1 LL-34/35 DO-213AA) 150mAdc, 1N645/47/49UR-1

    diode 1N645

    Abstract: 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34
    Text: 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f - <^£micorzclucéoi± _ T e le x 948318 100 Eqmes Street (617 872-7520 Framingham, Massachusetts 01701 Low Current Diodes (DO-7) V RM (r e p ) V o lta V o lt ' GDC645 150 1N645 Type No. I0


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    PDF GDC645 1N645 1IT646 1N647 1N270* GDC270 1H273 GDC273 diode 1N645 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34

    Untitled

    Abstract: No abstract text available
    Text: I n ter n a tio n a l 1N645 thru 1N649 S e m ic o n d u c to r , I n c . GLASS PASSIVATED SILICON RECTIFIER VOLTAGE - 225 to 600 Volts FEATURES CURRENT - 400 Milliamperes MECHANICAL DATA • High te m p e r a tu re m e t a l lu r g ic a l^ bonded co m p re s s io n con tacts


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    PDF 1N645 1N649 1N645 1N647

    1N645

    Abstract: 1N645A 1N649 1N647 1N646 1N648 1N645 DO7
    Text: 1N645 THRU 1N649 1N645A Central semiconductor Corp. SILICON GENERAL PURPOSE DIODES 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N645 series types are Silicon Diodes designed for general purpose medium current applications.


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    PDF 1N645 1N649 1N645A 1N646 1N647 1N648 1N645 DO7

    1N6459

    Abstract: 1N6460 EE-165
    Text: Schottky PowerMod 1N6459 - 1N6460 - A - I- B - CD Dim. Inches | •$- CD ii J -m |_ Br - - F - - Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher P2cq P2CQ I —1 -1 -1.350 0.700


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    PDF 1N6459 1N6460 1/4-20UNC T0-244AB 1N6460 Amperes/40 1000E EE-165

    1N649-1

    Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
    Text: 1N645-1 thru 1N649-1 ITTIH ÎM Microsemi Corp. FEATURES • • • • • • • MILITARY RECTIFIERS Microm iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Standard recovery. PIV to 6 0 0 volts.


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    PDF 1N645-1 1N649-1 MIL-S-19500/240D. 1N649-1 400mAdc 1N645-1 N647-1 150mAdc, 1N647-1 1N645-1 JAN N647

    marking D9

    Abstract: DO-35 BLUE CATHODE 100C 1N645 BKC International
    Text: BKC INTERNATIONAL 30E P • 1 1 7 n ñ 3 GDG03bô T ■ ¡ '“ p g i-Q C BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET LAWRENCE , M A . 01841 DATA SHEET fo r 1N645 D O - 3 5 ) ABSOLUTE MAXIMUM RATING: SYMBOL VRM Io IFSM Po Tj TA PARAMETER REVERSE WORKING VOLTAGE


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    PDF 1N645 DO-35) 400mA VR-225V IR-100uA DO-35 marking D9 DO-35 BLUE CATHODE 100C 1N645 BKC International

    1n647

    Abstract: 1N647-1
    Text: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240


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    PDF 00123S5 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645-1 1n647 1N647-1

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 1N645-1 0.018' 0.46nn 0.0 2 2 ' •nr • 1N645-1 • • S il ic o n R e c t if ie r M e t a l l u r g ic a l l y B o n d e d • H e r m e t ic a l l y S e a l e d 0.56nn M a x im u m R a t in g s 1.00' 1.50' 25.4 m - 38.1nm - 0.180' 7 4.57nn at


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    PDF 1N645-1 500mW 400mA, 150mA, DO-35