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    1N695A Search Results

    1N695A Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N695A American Microsemiconductor Germanium Rectifiers Scan PDF
    1N695A BKC International 25 V, 500 mA, gold bonded diode Scan PDF
    1N695A International Semiconductor GERMANIUM GLASS DIODE Scan PDF
    1N695A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N695A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N695A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N695A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N695A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N695A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N695A Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF
    1N695A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N695A Thomson-CSF Condensed Data Book 1977 Scan PDF

    1N695A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: <^£.mi-dondu ikoi ^Pr , Line. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE FEATURES 1N695A Low forward voltage drop —low power consumption Thirty years of proven reliability —one million hours mean lime between failures (MTBF)


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    1N695A 500mA 100uA 100mA lr200uA PDF

    AA119 leakage current

    Abstract: No abstract text available
    Text: ^£,mi-L.onaactoi ^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. GERMANIUM DIODES TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1 Gold Bonded Germanium Diodes in DO-7 Package Peak Inverse Voltage (WIN.) (PIV) Type Volts 65 AA113


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    AA113 AA117 AA118 AA119 AA138 AA143 AA144 AAZ15 AAZ17 AAZ18 AA119 leakage current PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    1K60

    Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
    Text: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)


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    BA170 BAV17 BAV18 BAV19 BAV20 BAV21 BAX16 BAY71 BAY80 1N645 1K60 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645 PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


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    1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N34A reverse recovery

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge


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    1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery PDF

    IN34A

    Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
    Text: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5


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    1N137B 1N138B 1N200 1N201 1N202 1N203 1N204 1N205 1N206 1N207 IN34A 1N215 1N21 diode 1N218 1N87 uua 170 1N271 PDF

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p


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    1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    AA119

    Abstract: AA119 leakage current 1N38A OA91 1N3592 OA90 OA79 AA143 AA138 OA99
    Text: G G o ld B o n d e d G e rm a n iu m ermanium iodes MIIIH D io d e s in D O -7 Package Peak Inverse Voltage MIN. Maximum Reverse leakage current Maximum Forward Voltage Drop w lF Volts mA 1.1 0.18 1.0 1.5 1.5 0.5 1.0 0.45 0.45 0.75 0.45 2.2 1.0 1.0 1.0


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    AA113 AA117 AA118 AA119 AA138 AA143 AA144 AAZ15 AAZ17 AAZ18 AA119 leakage current 1N38A OA91 1N3592 OA90 OA79 OA99 PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


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    1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    1N34A do-35

    Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
    Text: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270


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    00003Q0 T-01-0 AA117 AA118 AA121 AA143 AA144 AAY30 AAY32 AAY33 1N34A do-35 1N34A reverse recovery OA47 AA143 oa90 OA90 AA218 1N60 LL 34 1N3467 PDF

    OA47 germanium

    Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
    Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276


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    AA117 AA118 AA121 AA130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 OA47 germanium AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    DSAIH0002555

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 30E D • 117e “=103 0G0033M 3 ■ H T - 0 3 - C > 7 ft Lake Street PO Box 1436 Lawrence, MA USA 01841 BKÇ International Electronics Inc. Telephone 617) 681-0392 • Telefax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE FEATURES


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    0G0033M 1N695A 500mA 100uA 100mA 200uA MIL-S-195 DSAIH0002555 PDF

    lN34A

    Abstract: Germanium itt
    Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap


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    1N34A 1N38A 1N388 lN34A Germanium itt PDF

    1N48 zener

    Abstract: 1N770 1N418 1N448 1N34 IN452 1N104 1N126 1N38A 1N46
    Text: AM ER I C A N M I C R O S E M I C O N D U C T BSE D • G 7 1 c1775 O O O O O C H b « A M R T - d - C H ZENER DIODES CAN YOU GET AN YO NES ATTENTION CUSTOM TOLERANCE Z ENE R * * TOLERANCES * Z E N ER * 1/2. * LARGE * EAST TO OR AND * 1 SMALL PROMPT, BETWEEN


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    000000e) IN108 1N450 1N995 1N97A 1N355 1N996 1N98A 1N417 1N3110 1N48 zener 1N770 1N418 1N448 1N34 IN452 1N104 1N126 1N38A 1N46 PDF

    1N770

    Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
    Text: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695


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    0DQQ333 1N695 500mA 25nded MIL-S-19500, 1N770 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International PDF

    1n45b

    Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
    Text: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45


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    3flL1750 1N34A 1N38B 1N52A 1N54A 1N251* 1N252. 1N434 1N458 1N456A 1n45b 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g PDF