1SV277
Abstract: No abstract text available
Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)
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1SV277
1SV277
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Untitled
Abstract: No abstract text available
Text: Product specification 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25
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1SV277
OD-323
30Typ.
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Untitled
Abstract: No abstract text available
Text: 1SV277WT BAND SWITCHING DIODE PINNING Applications • Low loss band switching in VHF television tuners • Surface mount band-switching circuits PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T Top View Marking Code: "T" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC
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1SV277WT
OD-523
OD-523
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1SV277
Abstract: No abstract text available
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV277 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.30Typ. Low Series Resistance:rs = 0.42 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02
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1SV277
OD-323
30Typ.
1SV277
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1SV277
Abstract: No abstract text available
Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)
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1SV277
1SV277
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Abstract: No abstract text available
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package DESCRIPTION PIN • Continuous reverse voltage: max. 35 V 1 Cathode • Continuous forward current: max.100 mA 2 Anode • Low diode capacitance: max.1.2 pF 2 1 • Low diode forward resistance: max. 0.7 Ω
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1SV277WT
OD-523
OD-523
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Untitled
Abstract: No abstract text available
Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics
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1SV277
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Untitled
Abstract: No abstract text available
Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.3 typ. • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)
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1SV277
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1SV277
Abstract: No abstract text available
Text: 1SV277 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV277 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.3 標準 • 直列抵抗が小さい。 : rs = 0.42 Ω (標準) • 2 端子小型外囲器なので､チューナの小型化に適しています。
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1SV277
1SV277
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100MHZ
Abstract: marking code TS
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
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1SV277WT
100mA
OD-523
OD-523
100MHZ
marking code TS
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1SV277
Abstract: No abstract text available
Text: 1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.3 typ. · Low series resistance: rs = 0.42 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics
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1SV277
1SV277
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1SV277
Abstract: No abstract text available
Text: 20010110 1SV277 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V
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1SV277
508E-16
00E-04
466E-12
00E-09
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100MHZ
Abstract: No abstract text available
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
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1SV277WT
100mA
OD-523
OD-523
100MHZ
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV277
SV277
SV277
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1SV277
Abstract: No abstract text available
Text: 1SV277 TOSHIBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)
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1SV277
1SV277
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Untitled
Abstract: No abstract text available
Text: 1SV277 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 7 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5
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1SV277
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1SV277
Abstract: 900E
Text: 1SV277 TO SH IBA 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5
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1SV277
1SV277
900E
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV277 V C O FOR UHF B A N D R A D IO • • • High Capacitance Ratio : C i v /,C4 V = 2.3 Typ. Low Series Resistance : rs = 0.42O (Typ.) Small Package M A X IM U M RATIN G S (Ta = 25°C) CHARACTERISTIC
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1SV277
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV277 1 SV2 7 7 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV277
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Untitled
Abstract: No abstract text available
Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV277
SV277
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1SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV277
470MHz
1SV277
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE U• v V W 9 SILICON EPITAXIAL PLANAR TYPE 7 7 * VCO FOR UHF BAND RADIO U nit in mm • High Capacitance Ratio : C i y / C 4 v = 2.3 Typ. • Low Series Resistance • Sm all Package : r$ = 0 .4 2 il (Typ.)
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