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HUBER+SUHNER 32061SE-29171SVCR3-29171SVCR3-12 RF Cable Assemblies VITA 67.3 SMPS(f) to VITA 67.3 SMPS(f)
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1SV312 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
1SV312	Toshiba	RF Switch Diodes; Surface Mount Type: Y; Package: USQ; Number of Pins: 4; Application Scope: Switch	Original	PDF
1SV312	Toshiba	Diode Silicon Epitaxial PIN Type	Scan	PDF
1SV312	Toshiba	Silicon epitaxial PIN type diode for VHF-UHF band RF attenuator applications	Scan	PDF
1SV312TE85L	Toshiba	1SV312TE85L - Diode PIN Attenuator 50V 4-Pin USQ T/R	Original	PDF
1SV312TE85L	Toshiba	Rf Attenuator, VHF-UHF Band Rf Attenuator Applications, Tape and Reel	Scan	PDF

1SV312 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1SV312 Abstract: No abstract text available Text: 1SV312 東芝ダイオードシリコンエピタキシャルPIN形 1SV312 ○ VHF･UHF バンド減衰器用AGC 用単位: mm • 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており、超高密度実装に適しています。	Original	PDF	1SV312 1SV312
Untitled Abstract: No abstract text available Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.	Original	PDF	1SV312
1SV312 Abstract: No abstract text available Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.	Original	PDF	1SV312 1SV312
1SV312 Abstract: No abstract text available Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. · Low capacitance: CT = 0.25 pF typ.	Original	PDF	1SV312 1SV312
1SV312 Abstract: No abstract text available Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.	Original	PDF	1SV312 1SV312
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	PDF	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	PDF	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
RFM70U12D Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 Text: 東芝半導体製品総覧表 2009 年 7 月版高周波デバイス高周波バイポーラ小信号トランジスタ高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ高周波ダイオード小信号 MMIC 高周波セルパック	Original	PDF	SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
JDV2S31CT Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 Text: 製品カタログ 2009-9 東芝半導体製品カタログ高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。	Original	PDF	BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
2sc5108 Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,	Original	PDF	BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
sec 2sc5088 Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and	Original	PDF	BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
MT3S111P Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287	Original	PDF	2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	PDF	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
2fu smd transistor Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	PDF	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
DF2S3.6SC Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS Text: 東芝半導体製品総覧表 2010 年 1 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	PDF	SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Untitled Abstract: No abstract text available Text: T O S H IB A 1SV312 T O SH IB A D IO D E SILICON EPITAXIA L PIN TYPE 1 SV3 1 2 V H F -U H F B A N D RF A T T EN U A T O R A PP LIC A T IO N S U n it in mm 2.1 ± 0.1 Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.	OCR Scan	PDF	1SV312
1SV312 Abstract: No abstract text available Text: 1SV312 TOSHIBA 1 SV3 1 2 TO SHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F -U H F B AN D RF A TTE N U A TO R APPLICATIONS 2.1 ± 0.1 • • • Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.	OCR Scan	PDF	1SV312 1SV312
Untitled Abstract: No abstract text available Text: 1SV312 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV3 1 2 Unit in mm V H F -U H F B A N D RF A TTE N U A TO R APPLICATIONS 2.1 ± 0.1 • • • j 1-25±0.1j Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.	OCR Scan	PDF	1SV312
1SV312 Abstract: No abstract text available Text: 1SV312 TOSHIBA 1 SV3 1 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS 2.1 ± 0.1 • • Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. Low Capacitance	OCR Scan	PDF	1SV312 1SV312
Toshiba 1J Abstract: No abstract text available Text: 1SV312 TO SHIBA 1 S V 3 12 TO SHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F -U H F B A N D RF A TTE N U A TO R APPLICATIONS 2.1 ± 0.1 j1.25± 0.1j Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.	OCR Scan	PDF	1SV312 Toshiba 1J

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1SV312 Price and Stock

HUBER+SUHNER 32061SE-29171SVCR3-29171SVCR3-12

1SV312 Datasheets (5)

1SV312 Datasheets Context Search

1SV312

Untitled

1SV312

1SV312

1SV312

SCJ0004N

Variable Capacitance Diodes

RFM70U12D

JDV2S31CT

2sc5108

sec 2sc5088

MT3S111P

2sc5066

TOSHIBA RF Power Module S-AV24

3SK73

2fu smd transistor

DF2S3.6SC

BB 505 Varicap Diode

FET K161

Untitled

1SV312

Untitled

1SV312

Toshiba 1J