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    1X1012 Search Results

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    1X1012 Price and Stock

    Bourns Inc 4611X-101-222LF

    RES ARRAY 10 RES 2.2K OHM 11SIP
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    DigiKey 4611X-101-222LF Bulk 1,980 1
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    Avnet Americas 4611X-101-222LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-222LF 1,232
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    RS 4611X-101-222LF Bulk 17 Weeks 2,000
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    TME 4611X-101-222LF 1,225
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    Avnet Abacus 4611X-101-222LF 18 Weeks 2,000
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    Master Electronics 4611X-101-222LF
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    Bourns Inc 4611X-101-271LF

    RES ARRAY 10 RES 270 OHM 11SIP
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    DigiKey 4611X-101-271LF Bulk 1,965 1
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    Avnet Americas 4611X-101-271LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-271LF 2,120
    • 1 $0.63
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    Newark 4611X-101-271LF Bulk 2,000
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    RS 4611X-101-271LF Bulk 17 Weeks 2,000
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    Avnet Abacus 4611X-101-271LF 18 Weeks 2,000
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    Master Electronics 4611X-101-271LF
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    Fix Supply 60211X-10-1-2

    Push to Connect Tube Fitting - S
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    DigiKey 60211X-10-1-2 Bulk 1
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    Fix Supply 60111X-10-1-2

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    DigiKey 60111X-10-1-2 Bulk 1
    • 1 $57.36
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    Bourns Inc 4611X-101-273LF

    RES ARRAY 10 RES 27K OHM 11SIP
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    DigiKey 4611X-101-273LF Reel 2,000
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    Avnet Americas 4611X-101-273LF Bulk 15 Weeks 2,000
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    Mouser Electronics 4611X-101-273LF
    • 1 $0.61
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    • 1000 $0.117
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    Newark 4611X-101-273LF Bulk 2,000
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    RS 4611X-101-273LF Bulk 17 Weeks 2,000
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    Bristol Electronics 4611X-101-273LF 1,700
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    Master Electronics 4611X-101-273LF
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    1X1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


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    PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


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    PDF 238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE

    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day


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    PDF HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


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    PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s


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    PDF HXNV01600 1x106 1x109 1x1012 1x10-10 1x1014 1x1015

    Untitled

    Abstract: No abstract text available
    Text: TLP351A Photocouplers GaAℓAs Infrared LED & Photo IC TLP351A 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP351A is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP351A TLP351A

    Untitled

    Abstract: No abstract text available
    Text: TLP220GA Photocouplers Photorelay TLP220GA 1. Applications • Mechanical relay replacements • Security Systems • Measuring Equipment • Factory Automation FA • Amusement Equipment • Smart Meters • Electricity Meters 2. General The TLP220GA photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It


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    PDF TLP220GA TLP220GA

    Untitled

    Abstract: No abstract text available
    Text: TLP700H Photocouplers GaAℓAs Infrared LED & Photo IC TLP700H 1. Applications • Transistor Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP700H is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode


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    PDF TLP700H TLP700H

    Untitled

    Abstract: No abstract text available
    Text: TLP714 Photocouplers GaAℓAs Infrared LED & Photo IC TLP714 1. Applications • Intelligent Power Module Signal Isolation • Factory Automation FA • Transistor Inverters 2. General The TLP714 is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode


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    PDF TLP714 TLP714

    Untitled

    Abstract: No abstract text available
    Text: TLP2768 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2768 1. Applications • Factory Automation FA • Plasma Display Panels (PDPs) • Measurement Instrumentation 2. General The Toshiba TLP2768 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,


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    PDF TLP2768 TLP2768

    11-4M1S

    Abstract: TLP175A
    Text: TLP175A Photocouplers Photorelay TLP175A 1. Applications • Mechanical relay replacements • Security Systems • Measuring Instruments • Factory Automation FA • Amusement Equipment • Smart Meters • Electricity Meters 2. General The TLP175A photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is


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    PDF TLP175A TLP175A 11-4M1S

    Untitled

    Abstract: No abstract text available
    Text: TLP2962 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2962 1. Applications • Factory Automation FA • High-Speed Digital Interfacing • Measurement Instrumentation 2. General The Toshiba TLP2962 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,


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    PDF TLP2962 TLP2962

    INF-8077i

    Abstract: INF8077i PLRXXL-SC-S43-C1 JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM
    Text: COMMUNICATIONS MODULES & SUBSYSTEMS RoHS Compliant XFP Optical Transceiver —850 nm for up to 300m Reach PLRXXL Series Key Features • 850 nm optical signals for up to 300 m reach over enhanced multimode fiber • Low power consumption < 1.5 W max • 0°C to 70°C case temperature operating range


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    PDF 10GBASE-SR 10GBASE-SW 1-800-498-JDSU 800-5378-JDSU PLRXXL-SC-S43-C1 10GbE 498-JDSU 5378-JDSU PLRXXL-SC-S43-C1 INF-8077i INF8077i JDSU 850nm VCSEL application SFf-8431 10 gb laser photodiode PIN photodiode 850nm schematic diagram for ac line voltage conditioner VCSEL 10g CHIP 850NM

    INF-8074

    Abstract: No abstract text available
    Text: AFBR-57J9AMZ Digital Diagnostic SFP, 850nm 6.144 Gb/s, RoHS OBSAI/CPRI Compatible Optical Transceiver Data Sheet Description Features Avago’s AFBR-57J9AMZ optical transceiver supports high speed serial links over multimode optical fiber at signaling rates up to 7.4 Gb/s for wireless base station applications involving the OBSAI or CPRI protocols, as well


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    PDF AFBR-57J9AMZ 850nm AFBR-57J9AMZ INF-8074 SFF-8472 21CRF AV02-3648EN

    TLP701H

    Abstract: No abstract text available
    Text: TLP701H Photocouplers GaAℓAs Infrared LED & Photo IC TLP701H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP701H is a photocoupler in a SDIP6 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP701H TLP701H

    FTM-8012C-L

    Abstract: Fiberxon FTM-8012C FTM-8012C-S Fiberxon FTM-8012C-L fiberxon 1.25G 8012c Fiberxon FTM-8012C 8012C
    Text: Dec. 20, 2003 FTM-8012C-S/FTM-8012C-L 1.25G 850nm SFP Transceiver Members Of FlexonTM Family Features 850nm VCSEL transmitter 550m with 50/125 µm MMF 275m with 62.5/125 µm MMF Multi-source package with LC receptacle Optional spring latch for high density application


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    PDF FTM-8012C-S/FTM-8012C-L 850nm FTM-8012C-S FTM-8012C-L 25Gbps FTM-8012C-S/FTM-8012C-L Fiberxon FTM-8012C Fiberxon FTM-8012C-L fiberxon 1.25G 8012c Fiberxon FTM-8012C 8012C

    fiberxon SFP

    Abstract: 1000base-sx MMF 850nm
    Text: Mar. 2, 2006 1~2.125Gbps Spring-Latch SFP Transceiver Without monitoring function, for 300m transmission Members of FlexonTM Family ‹ ‹ ‹ ‹ ‹ Compatible with IEEE 802.3 Compatible with FCC 47 CFR Part 15, Class B Compatible with FDA 21 CFR 1040.10 and


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    PDF 125Gbps GR-468-CORE 125Gbps; 25Gbps 850nm fiberxon SFP 1000base-sx MMF 850nm

    Untitled

    Abstract: No abstract text available
    Text: Nov. 25, 2005 1~2.125Gbps Lever-Latch SFP Transceiver With monitoring function, for 300m transmission Members of FlexonTM Family ‹ ‹ ‹ ‹ ‹ Channel Compatible with IEEE 802.3 Compatible with FCC 47 CFR Part 15, Class B Compatible with FDA 21 CFR 1040.10 and


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    PDF 125Gbps GR-468-CORE 850nm SFF-8472

    fiberxon sfp

    Abstract: FTM-8112C
    Text: Nov.13, 2006h, 1.25Gbps Lever-Latch SFP Transceiver With monitoring function, for 550m transmission Members of FlexonTM Family Compatible with IEEE 802.3 Compatible with FCC 47 CFR Part 15, Class B Compatible with FDA 21 CFR 1040.10 and 1040.11, Class I


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    PDF 2006h, 25Gbps GR-468-CORE 850nm SFF-8472 FTM-8112C-LE( 24hrs printed2007-01-15 fiberxon sfp FTM-8112C

    Untitled

    Abstract: No abstract text available
    Text: TLP759 IGM TENTATIVE TOSHIBA Photocoupler GaAℓAs Ired + Photo IC TLP759(IGM) Transistor Invertor Inverter For Air Conditioner Line Receiver IPM Interfaces Unit in mm The TOSHIBA TLP759(IGM) consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diodetransistor.


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    PDF TLP759

    GEC Plessey Semiconductors cross reference

    Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
    Text: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501


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    PDF MAS281 MIL-STD-1750A DS3563-4 MAS281 MIL-STD-1750A 16-bit MA17501 MA17502 MA17503 GEC Plessey Semiconductors cross reference BMA31751 MA17501 MA31751 AD00 TI E04A

    LT1012 spice model

    Abstract: LT1012 500E LT1024
    Text: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,


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    PDF U1012 LT1012 LT1024) 0E-05, 0E-11, 0E-01V/us, 9E-01V/us, 380uA LT1012 spice model 500E LT1024

    honeywell memory sram

    Abstract: 419B3E
    Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec


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    PDF HR2210 1x106 1x1012rad 1x101 honeywell memory sram 419B3E

    2N7268

    Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
    Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs


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    PDF IRHM7150 IRHM815Q IRHM8150 JANSRSN7S68 1x106 1x105 IRHM71500 IRHM7150U 2N7268 h206 h208