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    1AV MARKING Search Results

    1AV MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    1AV MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code 1AW

    Abstract: SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional polarity only


    Original     		SMB10 DO-214AA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C PDF

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    marking code 1BL Diode

    Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode 1bw 83 marking code 1AW J-STD-002B JESD22-B102D marking code 1ay PDF

    marking 1af

    Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		SMB10J5 DO-214AA 50mVp-p 11-Mar-04 marking 1af marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW PDF

    smb8j28

    Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 smb8j28 mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH PDF

    marking CODE 1BS

    Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		SMB10J5 DO-214AA DO-214AA 08-Apr-05 marking CODE 1BS 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 MARKING 1BW 1BW MARKING marking CODE 1BH PDF

    marking code 1BL Diode

    Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 marking code 1BL Diode marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    marking code 1BL Diode

    Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SMBJ vishay

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 J-STD-020, AEC-Q101 DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SMBJ vishay PDF

    mosfet 1ak

    Abstract: SMB8J17CA SMB8J14C marking 1AD JESD22-B102 J-STD-002 SMB10 SMB10J15 SMB8J40CA SMB10J16A
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 11-Mar-11 mosfet 1ak SMB8J17CA SMB8J14C marking 1AD JESD22-B102 J-STD-002 SMB10J15 SMB8J40CA SMB10J16A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 J-STD-020, DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    marking code 1AW

    Abstract: marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW marking code 1ay PDF

    marking code 1bx

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original     		SMB10 DO-214AA J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. marking code 1bx PDF

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMB10 J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA SSM6K07FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K07FU DC-DC CONVERTERS HIGH SPEED SWITCHING APPLICATIONS Unit in mm 2.1 ±0.1 • Small Package • R^UIl = isn = 1AVÌ — .O, m f lv : Ron = 220 mO max. @Vg S = 4 v Low Input Capacitance


    OCR Scan     		SSM6K07FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF A MPLIFIER APPLICATIONS Unit in nun 2.1 ±0.1 . High Gain : Gpe=24dB Typ. (f=200MHz) . Low Noise : N F = 2 .OdB(Typ.) (f=200MHz) . Excellent Forward AGC Characteristics _ CM o •n o -H CJ Iin •£> 1ft


    OCR Scan     		2SC4249 200MHz) M-15T M-25T 2S04249 PDF

    smd diode a7

    Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
    Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output


    OCR Scan     		DF30PC3M STO-220 smd diode a7 schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd PDF

    1RFP460

    Abstract: irfp460 i IRFP460
    Text: PD-9.512B International S ü R e ctifie r IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 2 7 0


    OCR Scan     		IRFP460 O-247 O-220 O-218 1RFP460 irfp460 i PDF

    2N1358

    Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
    Text: MIL-S-19500/122C >L ojiriUAiiLjL xyoy SUPERSEDING MIL-S-19500/122B 28 Ju ly 1965 M IL IT A R Y S PEC IFIC A T IO N SEM ICONDUCTOR D EV IC E, TRANSISTO R, PN P, GERM ANIUM , HIG H -PO W ER T Y P E 2N1358 This specification is mandatory for use bv a ll Departments


    OCR Scan     		MIL-S-19500/122C MIL-S-19500/122B 2N1358 MIL-S-19500/122C 2N1358 pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011 PDF