100v 4p7
Abstract: m3181 bz 103 c24 561 1kv 222 3KV 333 1kv 1N00 8121N 8P20 8171M
Text: Radial Lead Capacitors Marking and Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. Example: 1000pF ±10% 50V 2X1 dielectric
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1000pF
100pF
100pF
100v 4p7
m3181
bz 103 c24
561 1kv
222 3KV
333 1kv
1N00
8121N
8P20
8171M
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8121M
Abstract: 8121N 1n00 8123Z
Text: Dipped Radial Lead Capacitors 50V - 200V Capacitance Table - Ultra-stable Dielectric C0G Size 8111M 50 Rated voltage d.c. Cap. range 3.9pF 4.7 5.6 6.8 8.2 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1.0nF 1.2 1.5 1.8
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8121M
8121N
8111M
8111N
8131M
8141M
8151M
8111M
8111N
8121M
8121N
1n00
8123Z
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syfer x7r capacitors variation over temperature
Abstract: CECC 32 100
Text: Multilayer Ceramic Capacitors Introduction Product Ranges Manufacturing Controls The standard Multilayer Ceramic product ranges offered by Syfer include: These ranges are available in a choice of dielectrics, voltages and capacitance tolerances. Particular importance is placed on the assurance of Quality
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Ceramic Singlelayer Capacitors
Abstract: IEC 384-14/2 X1 440 Y1 250 wkp 4n7 wko 400v 4n7 disc ceramic capacitor WKO 4n7 M X1 WYO 5n M 250 103 Ceramic Disc Capacitors 101 Ceramic Disc Capacitors 2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR wkp 2n2 m
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC SINGLELAYER CAPACITORS vishay DRALORIC vsD-db0012-0011 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0012-0011
Ceramic Singlelayer Capacitors
IEC 384-14/2 X1 440 Y1 250
wkp 4n7
wko 400v 4n7 disc ceramic capacitor
WKO 4n7 M
X1 WYO 5n M 250
103 Ceramic Disc Capacitors
101 Ceramic Disc Capacitors
2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR
wkp 2n2 m
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BC846A-G
Abstract: BC847A-G BC848A-G BC846B-G BC847B-G BC848B-G BC847C-G BC848C-G Small Signal Transistor BC8468
Text: Small Signal Transistor BC846A-G Thru. BC848C-G NPN RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC
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BC846A-G
BC848C-G
BC846
BC847
BC848
OT-23
OT-23,
MIL-STD-750,
QW-BTR31
BC846A-G
BC847A-G
BC848A-G
BC846B-G
BC847B-G
BC848B-G
BC847C-G
BC848C-G
Small Signal Transistor
BC8468
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BC846AW-G
Abstract: No abstract text available
Text: Small Signal Transistor BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C
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BC846AW-G
BC848CW-G
BC846W
BC847W
BC848W
OT-323
OT-323,
MIL-STD-750,
QW-BTR35
BC846AW-G
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistor BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C
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BC846AW-G
BC848CW-G
BC846W
BC847W
BC848W
OT-323
OT-323,
MIL-STD-750,
QW-BTR35
BC846AW-G
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TRANSISTOR SMD MARKING CODE p1
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature
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BC846AW-G
BC848CW-G
BC846W
BC847W
BC848W
OT-323
OT-323,
MIL-STD-750,
QW-BTR35
BC846AW-G
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD CODE PACKAGE SOT323
TRANSISTOR SMD MARKING CODE d2
TRANSISTOR SMD MARKING CODE ce
TRANSISTOR SMD MARKING CODE oc
smd transistor marking code P
MARKING CODE SMD IC
TRANSISTOR SMD MARKING CODE 1l
SMD TRANSISTOR MARKING 1B
SMD TRANSISTOR MARKING 28
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistor BC846A-G Thru. BC848C-G NPN RoHS Device Features -Power dissipation PCM: 0.20W (@TA=25 OC) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC
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BC846A-G
BC848C-G
BC846
BC847
BC848
OT-23
OT-23,
MIL-STD-750,
QW-BTR31
BC846A-G
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top223y
Abstract: Voltage Doubler application schematic diagram 200v dc voltage regulator UPR2D TRANSFORMER EI25 10 Panasonic 1000uf 200v TSD-1144 tsd1144 ECA1HFG221 flyback transformer pin configuration
Text: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP223Y. REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE 3-1 VOLTAGE = 0.250Vrms FREQUENCY = 100 KHZ
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OP223Y.
250Vrms
PMCE-0330
33mHy
TSD-1144
VTP01001,
10uHY
TSD-1144
MUR160
350mA
top223y
Voltage Doubler application
schematic diagram 200v dc voltage regulator
UPR2D
TRANSFORMER EI25 10
Panasonic 1000uf 200v
tsd1144
ECA1HFG221
flyback transformer pin configuration
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MAX 7642
Abstract: 0911 TA 7642 Schurter 0035.5001 0035.5004 BF 0035.5004
Text: Signallampenfassungen BF Signal-lamps Ausführungen Models Abmessungen Dimensions 1. Elektrische Kennwerte / Electrical data Leistung / Power consumption Spannung Voltage 2. Sonstige Kennwerte / Other data Lagertemperatur / Storage temperature Bohrplan Drilling diagram
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capacitor 104 12KV
Abstract: 100v 4p7 capacitor 221 k 1kv capacitor 104 1KV 18NF 630V Y cap 10nF 1kV 220pf 15kv ceramic capacitor 10nF 1kV capacitor 560 pF 6kV 47NF 500V
Text: Radial Leaded capacitors Radial Leaded capacitors Dimensions - Dipped Radial Syfer Technology produces a wide range of dipped radial leaded capacitors. These are available in rated voltages of 50V up to 6kV. Although our catalogue range extends to 6kV, we are able to offer
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10kVdc
8111N
8121N
8121N
2500pcs
1000pcs
2000pcs
capacitor 104 12KV
100v 4p7
capacitor 221 k 1kv
capacitor 104 1KV
18NF 630V
Y cap 10nF 1kV
220pf 15kv
ceramic capacitor 10nF 1kV
capacitor 560 pF 6kV
47NF 500V
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17127
Abstract: EGNC210MK
Text: EGNC210MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 17.5dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGNC210MK
25deg
17127
EGNC210MK
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EGNC210MK
Abstract: No abstract text available
Text: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGNC210MK
Stora37
-j100
EGNC210MK
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Untitled
Abstract: No abstract text available
Text: EGNC105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 51dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 20dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGNC105MK
51dBm
25deg
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EGNC210MK
Abstract: JESD22-A114 EGNC210M EGNC210
Text: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGNC210MK
EGNC210MK
JESD22-A114
EGNC210M
EGNC210
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EGNC105MK
Abstract: hemt 105w JESD22-A114 0 280 130 094
Text: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGNC105MK
51dBm
Dissi11
EGNC105MK
hemt
105w
JESD22-A114
0 280 130 094
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Untitled
Abstract: No abstract text available
Text: SINGLE-PHASE FULL WAVE BRIDGE 6 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING PRV/Leg 50V 100 V 200V Type No. 6PH05 6PH10 6PH20 '1 400V 600V 800V 1000V 6PH40 6PH60 6PH80 6PH100 ELECTRICAL CHARACTERISTICS PER LEG at T a = 25 °C Unless Otherwise Specified
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6PH05
6PH10
6PH20
6PH40
6PH60
6PH80
6PH100
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON Allgemeine Angaben General Features Roederstein Einfuhrung / Introduction Scheibenkondensatoren / Disc capacitors Seite / Paqe 4 4 1. Nennwerte-Reihe / Nominal rate series 2. MeB- und Prufbedingungen Measuring and testing conditions 3. Kennzeichnung / Marking
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44358
Abstract: 107603 roederstein etqw capacitor tantalum ETQW 002D10 3G2216 Roederstein ELECTROLYTIC CAPACITOR tantalum roederstein tantalum ETQW1 68503
Text: VISHAY INTER/ ROEDERSTEIN b2E D • 7821^24 O Q O m L i D57 Tantalum Electrolytic Capacitor Sindered Anode, Solid Semiconductor Electrolyte, -125 C Tantalum capacitors with sintered anode and solid semiconductor electrolyte with flame retardant fluidized bed coating.
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7fl21b24
44358
107603
roederstein etqw capacitor tantalum
ETQW
002D10
3G2216
Roederstein ELECTROLYTIC CAPACITOR tantalum
roederstein tantalum
ETQW1
68503
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roederstein tantalum
Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
Text: VI SH AY INTER / R O E D E R S T E I N b2E D • 7fl21b24 O G ü n ß b lOfl ■ Tantalum Electrolytic Capacitors Sintered Anode, Solid Semiconductor Electrolyte, +125°C Tantalum capacitors with sintered anode and solid semiconductor electrolyte, with flame retardant fluidized bed coating.
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7fl21b24
roederstein tantalum
70511
roederstein capacitor tantalum
Roederstein
ZR4040-2.5
LM136-2.5
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Untitled
Abstract: No abstract text available
Text: Roederstein Tantalum Capacitors Dipped 43 Tantalum Electrolytic Capacitors Sintered Anode, Solid Sem iconductor Electrolyte, +125°C Tantalum capacitors with sintered anode arid solid semiconductor electrolyte, with flame retardant fluidized bed coating. The ETPW type is an ideal component
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1N4007
Abstract: TDA1175P
Text: ¿tZ » SGS-THOMSON Eiaö S (S [i[L[i T[S@K!lD®§ T D A 1175P LOW-NOISE VERTICAL DEFLECTION SYSTEM • COMPLETE VERTICAL DEFLECTION SYSTEM ■ LOW NOISE ■ SUITABLE FOR HIGH DEFINITION MONITORS ■ ESD PROTECTED DESCRIPTION The TDA1175Pis a monolithic integrated circuit in
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TDA1175P
TDA1175Pis
POWERDIP16
POWERDIP16
1N4007
TDA1175P
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8131M
Abstract: 180-nF 8121m capacitor npo 2.2NF 50V 5 470PF 8121N capacitor 33pF 6kV syfer 8151 CAP 12nF 50V 8165M
Text: Radial Leaded capacitors Syfer Technology produces a wide range of dipped radial leaded capacitors. These are available in rated voltages of 50V up to 6kV. Although our catalogue range extends to 6kV, we are able to offer a capability for specials up to 10kV. Our larger case
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10kVdc
8111M
8111nt
355t1
8131M
180-nF
8121m
capacitor npo 2.2NF 50V 5
470PF
8121N
capacitor 33pF 6kV
syfer 8151
CAP 12nF 50V
8165M
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