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    1BL3 Search Results

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    1BL3 Price and Stock

    Nexperia PESD3V3X1BL,315

    TVS DIODE 3.3VWM DFN1006-2
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    DigiKey PESD3V3X1BL,315 Digi-Reel 52,718 1
    • 1 $0.46
    • 10 $0.303
    • 100 $0.46
    • 1000 $0.116
    • 10000 $0.097
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    PESD3V3X1BL,315 Cut Tape 52,718 1
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    • 100 $0.46
    • 1000 $0.116
    • 10000 $0.097
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    PESD3V3X1BL,315 Reel 50,000 10,000
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    Mouser Electronics PESD3V3X1BL,315 40,878
    • 1 $0.35
    • 10 $0.236
    • 100 $0.148
    • 1000 $0.107
    • 10000 $0.088
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    Newark PESD3V3X1BL,315 Reel 20,000 10,000
    • 1 $0.075
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    TTI PESD3V3X1BL,315 Reel 10,000
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    • 10000 $0.079
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    Avnet Silica PESD3V3X1BL,315 10 Weeks 10,000
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    Chip1Stop PESD3V3X1BL,315 Cut Tape 3,569
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    • 10 $0.414
    • 100 $0.162
    • 1000 $0.109
    • 10000 $0.0979
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    EBV Elektronik PESD3V3X1BL,315 10 Weeks 10,000
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    Nexperia PESD5V0U1BL,315

    TVS DIODE 5VWM DFN1006-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PESD5V0U1BL,315 Cut Tape 23,114 1
    • 1 $0.2
    • 10 $0.139
    • 100 $0.2
    • 1000 $0.058
    • 10000 $0.051
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    PESD5V0U1BL,315 Digi-Reel 23,114 1
    • 1 $0.2
    • 10 $0.139
    • 100 $0.2
    • 1000 $0.058
    • 10000 $0.051
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    Mouser Electronics PESD5V0U1BL,315 16,917
    • 1 $0.2
    • 10 $0.139
    • 100 $0.065
    • 1000 $0.055
    • 10000 $0.032
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    Rochester Electronics PESD5V0U1BL,315 2,205,100 1
    • 1 $0.0275
    • 10 $0.0275
    • 100 $0.0259
    • 1000 $0.0234
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    TTI PESD5V0U1BL,315 Reel 50,000 10,000
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    Avnet Asia PESD5V0U1BL,315 6 Weeks 30,000
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    Avnet Silica PESD5V0U1BL,315 8 Weeks 10,000
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    EBV Elektronik PESD5V0U1BL,315 10,000 8 Weeks 10,000
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    Lumissil Microsystems IS31BL3508A-STLS2-TR

    IC LED DRV RGLTR PWM SOT23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS31BL3508A-STLS2-TR Cut Tape 4,438 1
    • 1 $0.58
    • 10 $0.515
    • 100 $0.3947
    • 1000 $0.2496
    • 10000 $0.2496
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    IS31BL3508A-STLS2-TR Digi-Reel 4,438 1
    • 1 $0.58
    • 10 $0.515
    • 100 $0.3947
    • 1000 $0.2496
    • 10000 $0.2496
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    Avnet Americas IS31BL3508A-STLS2-TR 20 Weeks 6,000
    • 1 $0.3
    • 10 $0.3
    • 100 $0.22
    • 1000 $0.22
    • 10000 $0.22
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    GLYN GmbH & Co. KG IS31BL3508A-STLS2-TR 2,424
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    EBV Elektronik IS31BL3508A-STLS2-TR 21 Weeks 3,000
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    Lumissil Microsystems IS31BL3508A-TTLS2-TR

    IC LED DRVR RGLTR PWM TSOT23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS31BL3508A-TTLS2-TR Cut Tape 2,439 1
    • 1 $0.7
    • 10 $0.618
    • 100 $0.4736
    • 1000 $0.29952
    • 10000 $0.29952
    		Buy Now
    IS31BL3508A-TTLS2-TR Digi-Reel 2,439 1
    • 1 $0.7
    • 10 $0.618
    • 100 $0.4736
    • 1000 $0.29952
    • 10000 $0.29952
    		Buy Now
    Mouser Electronics IS31BL3508A-TTLS2-TR 9,120
    • 1 $0.65
    • 10 $0.555
    • 100 $0.423
    • 1000 $0.277
    • 10000 $0.229
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    EBV Elektronik IS31BL3508A-TTLS2-TR 21 Weeks 3,000
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    Same Sky TS29-1212-1-BL-300-D

    SWITCH TACTILE SPST-NO 0.05A 12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TS29-1212-1-BL-300-D Tray 2,432 1
    • 1 $1.76
    • 10 $1.429
    • 100 $1.1567
    • 1000 $0.92967
    • 10000 $0.79527
    		Buy Now
    Mouser Electronics TS29-1212-1-BL-300-D 1,953
    • 1 $1.62
    • 10 $1.14
    • 100 $0.944
    • 1000 $0.788
    • 10000 $0.762
    		Buy Now
    TME TS29-1212-1-BL-300-D 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.98
    		Get Quote
    Find more 1BL3 price and stock on Findchips.com

    1BL3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*


    Original     		PDF MBRS130L SMB/DO-214AA

    6ES7223-1BL30-0XB0

    Abstract: 16DO SM1223 1223 digital transistor 16DI S7-1200
    Text: 6ES7223-1BL30-0XB0 Page 1 Product data sheet 6ES7223-1BL30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 16DI / 16DO, 16DI DC 24 V, SINK/SOURCE, 16DO, TRANSISTOR 0.5A Supply voltages Rated value 24 V DC Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)


    Original     		PDF 6ES7223-1BL30-0XB0 S7-1200, 6ES7223-1BL30-0XB0 16DO SM1223 1223 digital transistor 16DI S7-1200

    1bl3

    Abstract: diode 1bl3 JEDEC DO-214AA DO-214AA package power rating 18L3 CBVK741B019 F63TNR F924 MBRS130L SS22
    Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA COLOR BAND DENOTES CATHODE TOP MARK: 1BL3 1.0 Ampere Schottky Power Rectifiers


    Original     		PDF MBRS130L SMB/DO-214AA 12lopment. 1bl3 diode 1bl3 JEDEC DO-214AA DO-214AA package power rating 18L3 CBVK741B019 F63TNR F924 MBRS130L SS22

    1bl3

    Abstract: diode 1bl3 MBRS130L on 1bl3
    Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*


    Original     		PDF MBRS130L SMB/DO-214AA 1bl3 diode 1bl3 MBRS130L on 1bl3

    diode 1bl3

    Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 diode 1bl3 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3

    1bl3

    Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 MBRS130LT3/D 1bl3 diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D

    1BL3 marking code

    Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D 1BL3 marking code MBRS130LT3G 1bl3 diode MBRS130LT 1BL3

    1bl3 motorola

    Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original     		PDF MBRS130LT3/D MBRS130LT3 1bl3 motorola diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141

    1bl3 motorola

    Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBRS130LT3/D MBRS130LT3 1bl3 motorola diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA

    diode 1bl3

    Abstract: MBRS130LT3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 MBRS130LT3/D diode 1bl3 MBRS130LT3

    MBRS130LT3

    Abstract: 403A-03
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 MBRS130LT3/D MBRS130LT3 403A-03

    1bl3

    Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
    Text: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 MBRS130LT3/D 1bl3 diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D

    1bl3

    Abstract: on 1bl3 diode 1bl3 MBRS130L
    Text: MBRS130L MBRS130L Features • 0.185 4.699 0.160 (4.064) 0.083 (2.108) 0.075 (1.905 ) Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. 2 0.155 (3.937) 0.130 (3.302)


    Original     		PDF MBRS130L SMB/DO-214AA 1bl3 on 1bl3 diode 1bl3 MBRS130L

    diode 1bl3

    Abstract: MBRS130LT3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3 MBRS130LT3/D diode 1bl3 MBRS130LT3

    SM1223

    Abstract: S71200 S7-1200 simatic s7 - 1200 1PL30-0XB0 SM223 siemens S7-1200 siemens de 6es7 350
    Text: SM 1223 digital input/output module - Industry Mall - Siemens DE Page 1 of 6 Home Full Navigation Path Siemens Industry Catalogue Automation technology Automation Systems SIMATIC Industrial Automation Systems Controllers SIMATIC S7 modular controllers S7-1200


    Original     		PDF S7-1200 SM1223 S71200 S7-1200 simatic s7 - 1200 1PL30-0XB0 SM223 siemens S7-1200 siemens de 6es7 350

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    1bl3

    Abstract: No abstract text available
    Text: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high


    OCR Scan     		PDF MBRS130L 1bl3

    MG15G1AL3

    Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
    Text: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15


    OCR Scan     		PDF 2-22B1A MG15G1AL3 2-33F1A MG15H1AL1 2-33D1A MG25M1BK1 2-33C1A MG30G1BL3 H-101 MG15G1AL3 MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-22b1a MG200

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    as011

    Abstract: AD411 wt246
    Text: I T S lF t g ìQ ÌÌ ^ @ a { [R Ì® W a H Æ J MITSUBISHI LSIs M5M4V16409ATP-8r 10,-12,-15 Oct 26,1992 16MCDRAM:16M (4194304 - WORD BY 4 - BIT) Cache DRAM with 16k (4096-WORD BY4 -BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.


    OCR Scan     		PDF M5M4V16409ATP-8r 16MCDRAM 4096-WORD MDS-CDRAM-07-12/92/-IK as011 AD411 wt246

    403A-03

    Abstract: diode 1bl3 1BL3 1bl3 motorola
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with


    OCR Scan     		PDF MBRS130LT3/D 03A-03 403A-03 diode 1bl3 1BL3 1bl3 motorola

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.


    OCR Scan     		PDF MBRS130L