mk06u
Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Text: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des
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5v dc to 220v ac inverter
Abstract: Panasonic elevator door controller 12V DC to 230V AC inverters circuit diagram panasonic - elevator door controller manual high frequency welder circuit diagram 12v dc 240v ac inverter inverter DC 12v to AC 220v 24v dc to 230v ac single inverter Panasonic elevator door controller Elevator Door 220v to 12v inverters circuit diagrams
Text: Short Form Relays 09/2007 Telecommunications, machine construction, measurement and control systems, automotive electronics, building security and installation – today there is virtually no branch of human activity that can exist without using modern relays. Panasonic Electric Works is able
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RM1205-9,
5v dc to 220v ac inverter
Panasonic elevator door controller
12V DC to 230V AC inverters circuit diagram
panasonic - elevator door controller manual
high frequency welder circuit diagram
12v dc 240v ac inverter
inverter DC 12v to AC 220v
24v dc to 230v ac single inverter
Panasonic elevator door controller Elevator Door
220v to 12v inverters circuit diagrams
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68w Transistor smd
Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W
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HG4100
HG4516
HG4507
HG4078B
SGR46G
125VAC
60VDC
150VDC
24VDC
68w Transistor smd
bbc 127 324 DIODE
TRANSISTOR SMD 13W
smd transistor yb
lamp indicator 115vac 400hz
18w smd transistor
RD 6BL
relay 12v 1c/o
kd smd transistor
SGR642H
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smd 1C
Abstract: No abstract text available
Text: Transistors IC SMD Type Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS ON = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25
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KDS4501H
smd 1C
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transistor smd 6a
Abstract: smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V
Text: Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS ON = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25
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KI4542DY
transistor smd 6a
smd 1C
2945A
m 830 smd
Transistor Mosfet N-Ch 30V
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smd 1C
Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V
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KDS8928A
smd 1C
1c smd transistor
1b smd transistor
SMD Transistor nc
KDS8928A
SMD Transistor 1c
1130 pch
Dual N & P-Channel MOSFET
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ch 306
Abstract: smd 1C kds8958 1b smd transistor 78 DIODE SMD smd transistor 26
Text: Transistors IC SMD Type Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS ON = 0.028 RDS(ON) = 0.040 @ VGS = 10 V @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 @ VGS =- 10 V @ VGS =-4.5V Fast switching speed
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KDS8958
ch 306
smd 1C
kds8958
1b smd transistor
78 DIODE SMD
smd transistor 26
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KDS4559
Abstract: smd 1C n-ch smd transistor ja Transistor Mosfet N-Ch 30V
Text: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS4559 Features N-Channel 4.5 A, 60 V RDS ON = 55m RDS(ON) = 75m @ VGS = 10 V @ VGS =4.5V P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V Absolute Maximum Ratings Ta = 25
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KDS4559
KDS4559
smd 1C
n-ch
smd transistor ja
Transistor Mosfet N-Ch 30V
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78 DIODE SMD
Abstract: smd transistor 26
Text: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).
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KDS8333C
78 DIODE SMD
smd transistor 26
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kds9
Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used
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KDS9952A
kds9
TRANSISTOR SMD 13W
SMD 13W
Transistor Mosfet N-Ch 30V
KDS9952A
1c smd transistor
SMD Transistor nc
Dual N & P-Channel MOSFET
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smd 1C
Abstract: marking 1c MMBTA20
Text: Transistors IC SMD Type General Purpose Amplifier MMBTA20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 General Purpose Amplifier. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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MMBTA20
OT-23
smd 1C
marking 1c
MMBTA20
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marking 1c
Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
Text: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max
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KC847S
BC847S)
OT-363
marking 1c
smd 1C
Transistors Diodes smd e2
smd diode marking 77
SMD MARKING E1
BC847S
BC847S Application
diode marking 1c
E2 SMD Transistor
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SMD Transistor 1c
Abstract: No abstract text available
Text: Part Number System x X SMD Ser lo«_ 2 = mlnIPack 1C 3 = mlniPack Component 4 = mlnIBag Passive 5 = mlniBag Discrete 6 = miniReel Passive 7 = miniReel Discrete 8 = miniReel 1C 9 = Other X Passives X X X Capacitor / Resistor 0 = Ceramic Capacitor 1 • 1% Resistor
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SOM16
OT223
SX3512
SX5020
SMD Transistor 1c
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transistor bc 855
Abstract: pth posistor pth9c32 Murata PTH pth9c32ar471 ultrasonic sensor qt pth9c32ar471q-t
Text: POSiSTOR POSISTOR' i a * * a and PTH are trademarks of Murata Manufacturing Co. Ltd. Chip PTC Thermistor POSISTOR for Temperature Sensor PTH9C32 Series Most Suitable for the Thermal Protection of Hybrid 1C Circuits Chip PTC Thermistor, PTH9C32 series, is a SMD
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PTH9C32
transistor bc 855
pth posistor
Murata PTH
pth9c32ar471
ultrasonic sensor qt
pth9c32ar471q-t
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Untitled
Abstract: No abstract text available
Text: SIEMENS Video and Sound IF with FM-PLL Demodulator, AFC and V & S SCART TDA 5950X Bipolar 1C Features • Features video and sound IF • Video and sound SCART • AFC • NTSC option Type Ordering Code Package TDA 5950X Q67000-A5112 P-DSO-24-1 SMD TDA 5950X
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5950X
Q67000-A5112
P-DSO-24-1
Q67007-A5112
P-DSO-24-1
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CDFP3-F20
Abstract: HS9-4080ARH-8 8 pin AHB HS9-4080ARH 5962F9961701QSC 5962F9961701VSC HS-4080ARH HS9-4080ARH-Q hs4080
Text: HS-4080ARH interrii F e b u a ry . Data Sheet mi File Number 4563.3 Features Radiation Hardened Full Bridge N-Channel FET Driver • Electrically Screened to SMD # 5962-99617 The HS-4080ARH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver 1C. The device
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HS-4080ARH
HS-4080ARH
HS-4080ARHs
CDFP3-F20
HS9-4080ARH-8
8 pin AHB
HS9-4080ARH
5962F9961701QSC
5962F9961701VSC
HS9-4080ARH-Q
hs4080
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Untitled
Abstract: No abstract text available
Text: Programmable Digital Timer •SAB 0529 Bipolar 1C Type ■ SAB 0529 ■ SAB 0529 G Ordering Code Package Q 67000-H 2176 P-DIP-18 Q67000-H2952 P-DSO-2Q SMD With the digital tim er SAB 0529, delay times between 1 second and 31 1/2 hours can be set. Time base is the 50 Hz line frequency. A triac may be triggered by the SAB 0529 IC.
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67000-H
P-DIP-18
Q67000-H2952
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PMBT3903
Abstract: transistor SMD t08 R35A MARKING CODE SMD IC transistor t08 smd PMBT3904 smd code marking ft sot23 IC SMD MARKING CODE ti 3c
Text: N AMER PH I L I P S / D I S C R E T E ObE D ^53^31 QDlhlDS 0 ! PMBT39Ö3 PMBT3904 r - 3 S - SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.
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bb53T3Ã
PMBT39Ã
PMBT3904
PMBT3903
r-35-a
PMBT3903
transistor SMD t08
R35A
MARKING CODE SMD IC
transistor t08 smd
PMBT3904
smd code marking ft sot23
IC SMD MARKING CODE ti 3c
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LA 5530
Abstract: 5962-9085401HPX "SMD Code" h8 la 5531 HCPL-6531 sc 6531 D
Text: Whp%H E W L E T T mütim P A C K A R D HCPL-5500 HCPL-5501 883B 5962-9085401HPX HCPL-5530 HC PL-5531 (883B) 5962-8767902PX (8-pin Dual In-Line Package) HCPL-6530 HCPL-6531 (883B) 5962-87679032A (20 Terminal Leadless Chip Carrier) Transistor Output, Hermetically Sealed
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MIL-STD-1772
QML-MIL-II-38534,
MIL-H-38534
6N13S/6,
HCPL-2530/31
5531/883B
HCPL-6530
HCPL-6531
962-87679032A
LA 5530
5962-9085401HPX
"SMD Code" h8
la 5531
sc 6531 D
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smd transistor P2D
Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Text: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.
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PMBTA92
PMBTA93
smd transistor P2D
p2d smd
smd code p2d
smd transistor marking PA
MARKING CODE SMD IC
smd P2D
PMBTA93
P2d MARKING CODE
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Untitled
Abstract: No abstract text available
Text: > N AMER PHILIPS/DISCRETE QbE D • bbS3T31 □QlblDS □ ■ _ / L PMBT3903 PMBT3904 r - 3 £ T - SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended fo r use in telephony and professional communication equipment.
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bbS3T31
PMBT3903
PMBT3904
PMBT3903
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PZTA42
Abstract: PZTA43
Text: •i bbsa^ai a o E b a m ^s t « a p x N AMER PHILIPS/DISCRETE PZTA42 PZTA43 b7E D SILICON EPITAXIAL TRANSISTORS NPN transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.
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PZTA42
PZTA43
OT-223)
PZTA42
PZTA43
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SSY20
Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3
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transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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