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    1DB01 Price and Stock

    Murata Manufacturing Co Ltd GJM0335C1E5R1DB01D

    CAP CER 5.1PF 25V C0G/NP0 0201
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    DigiKey GJM0335C1E5R1DB01D Digi-Reel 6,941 1
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    • 1000 $0.01073
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    GJM0335C1E5R1DB01D Cut Tape 6,941 1
    • 1 $0.1
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    Avnet Americas GJM0335C1E5R1DB01D Reel 15,000 10 Weeks 15,000
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    Mouser Electronics GJM0335C1E5R1DB01D 30,000
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    Avnet Asia GJM0335C1E5R1DB01D 8 Weeks 15,000
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    Murata Manufacturing Co Ltd GJM1555C1H5R1DB01D

    CAP CER 5.1PF 50V C0G/NP0 0402
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    DigiKey GJM1555C1H5R1DB01D Cut Tape 3,370 1
    • 1 $0.1
    • 10 $0.038
    • 100 $0.0222
    • 1000 $0.0139
    • 10000 $0.01056
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    GJM1555C1H5R1DB01D Digi-Reel 3,370 1
    • 1 $0.1
    • 10 $0.038
    • 100 $0.0222
    • 1000 $0.0139
    • 10000 $0.01056
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    Mouser Electronics GJM1555C1H5R1DB01D 33,369
    • 1 $0.1
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    • 100 $0.016
    • 1000 $0.012
    • 10000 $0.009
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    Avnet Abacus GJM1555C1H5R1DB01D Reel 15 Weeks 10,000
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    Torex Semiconductor LTD XC6901DB01MR-G

    IC REG LINEAR -11V 200MA SOT25
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    DigiKey XC6901DB01MR-G Reel 3,000
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    Avnet Americas XC6901DB01MR-G Reel 8 Weeks 3,000
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    Murata Manufacturing Co Ltd GJM0335C1E9R1DB01J

    CAP CER 9.1PF 25V C0G/NP0 0201
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    DigiKey GJM0335C1E9R1DB01J Reel 50,000
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    Murata Manufacturing Co Ltd GJM0335G2A6R1DB01J

    CAP CER 6.1PF 100V X8G 0201
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    DigiKey GJM0335G2A6R1DB01J Reel 50,000
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    1DB01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: R75PF2180CK30J 75PF2180CK30J Capacitor, film, 0.018 uF, +/-5% Tol, -55/+105C, General Purpose, 630V@85C, Lead Spacing=10 mm L General Information T Manufacturer: Miscellaneous Electrical: H KEMET Not for new design. Use series F461-F464


    Original
    PDF R75PF2180CK30J 75PF2180CK30J) F461-F464 250VAC 2000v/us 90000V 1db014e0-7bcc-4ed5-a61e-8dd3ba9573d2

    Untitled

    Abstract: No abstract text available
    Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A speed-70/85/100/120ns 1DB01-11-MAY94 HY6264AP HY6264ALP

    LD33

    Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
    Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A 70/85/100/120ns 330mil 1270J 1DB01-11-MAY95 HY6264AP LD33 ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70

    Untitled

    Abstract: No abstract text available
    Text: HY6264A-I Series •HYUNDAI 8K X 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A-I forAY95 330mll, HY6264ALLP-I HY6264ALJ-I

    HV6264A

    Abstract: hy6264a A12CE I0530
    Text: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A HV6264A 70/85/100/120ns 1DB01-11-MAY95 330mil 048W2 1DB01 A12CE I0530

    3l08

    Abstract: hy538
    Text: •HYUNDAI / H Y 6 3 8 1 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­


    OCR Scan
    PDF 128KX HY638100 15/17/20/25ns 1DB01-11-MAY94 HY53B10D 1DQG1-11-MAY94 HY5381D0J HY53A1DDU 3l08 hy538

    Untitled

    Abstract: No abstract text available
    Text: HY6264A Series ‘HYUNDAI 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A 70/85/100/120ns 330mil 1DB01-11-MAY95 HY6264AP HY6264ALP

    NCC 5551

    Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
    Text: HY6264A-I Series •HYUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit


    OCR Scan
    PDF HY6264A-I 1DB02-11-M 0000BSC 330mil 878ft 1DB02-11-MAY9S HY6264ALP-I HY6264ALLP-I NCC 5551 SS LSE 0530 HY6264AL ZT 5551 y626

    HY5264A

    Abstract: bd111 MCA-12 HY5254A
    Text: HY5264A Series -HYUNDAI BK X 8-blt CMOS SRAM DESCHI FTIDN ThB HYB2B4A is a high-speed, low power and B,192 » B-bils CMDS static HAM labricatBd using Hyundai's high perform ance tw in tub CMDS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY5264A HYS254Ahas HY5254A DO/120ns 01-11-M Q141D 50fll 1DBD1-11-MAYM bd111 MCA-12

    hy6264

    Abstract: No abstract text available
    Text: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    PDF HY6264A-I 1DB02-11-MAY95 100IP9C) OS3003 330mil 4b750flfl hy6264