U4B R950
Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
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Original
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MPC8560
MPC8560UG
CH370
U4B R950
PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC
gigabyte MOTHERBOARD CIRCUIT diagram
C828 3-pin transistor
C1162
transistor C1162
gigabyte g31 MOTHERBOARD SERVICE MANUAL
emp3128
transistor C1162 Scheme
motorola r1009
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Untitled
Abstract: No abstract text available
Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors
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OCR Scan
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S29F4O0T-55TC
S29F4Q
-150T3
S29F400T-
9F400B
-150SI
S29F400T
-150SI
AS29F400B-5
S29F400T-5
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Untitled
Abstract: No abstract text available
Text: WM Y32K36V-XTQX WHITE /MICROELECTRONICS a 32Kx36 M onolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability ■ Packaging: ■ Clock Controlled, Registered, Address, Data and Control
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Y32K36V-XTQX
32Kx36
100-pin
30pFOutput
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Untitled
Abstract: No abstract text available
Text: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors
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OCR Scan
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8/128K
AS29F200T-120TI
AS29F200B-5SSC
AS29F200B-70SC
AS29F200B-70SI
AS29F200B-90SC
AS29F200B-90SI
AS29F200B-120SC
AS29F200B-120SI
AS29F200T-S5SC
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KM416S4030A
Abstract: km416s4031 KM416S4030AT-G
Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4030A/KM416S4031A
416S4031AT)
KM416S4030A
km416s4031
KM416S4030AT-G
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Untitled
Abstract: No abstract text available
Text: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. M T28F4°0B1 FLASH MEMORY S m artV o ltag e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Four m ain m em ory blocks
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110ns
44-PiLASH
48-PIN
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PDF
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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OCR Scan
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors
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OCR Scan
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AS29LL800
8/512Kx
speci20TC
S29LL800-120TI
S29LL800-150TC
S29LL800-150TI
AS29LL800-200TC
S29LL800-200TI
AS29LL800-120SC
AS29LL800-120SI
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Untitled
Abstract: No abstract text available
Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e
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512Kx8/256Kxl6
512Kx8/256Kx
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PDF
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1dq10
Abstract: No abstract text available
Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416C254B,
KM416V254B
256Kx16
0D23223
1dq10
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PDF
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ida5
Abstract: No abstract text available
Text: KM418C256B CMOS DRAM 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 18 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal
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KM418C256B
256Kx18
ida5
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PDF
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RA5E
Abstract: 100 CJB equivalent D0232
Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416C254D,
KM416V254D
256Kx16
RA5E
100 CJB equivalent
D0232
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):
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T28F800B5)
44-PIN
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PDF
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29LVS00
Abstract: 29LV800 AS29 AS29LV800 LI400
Text: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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8/512Kx
AS29LV800
1Mx8/512Kx16
64Kbyte
32Kword
AS29IV800T80SE
AS29D/800T-100SC
AS29D/800T-100SI
AS29LV800T-120SC
AS29LV800T-120SI
29LVS00
29LV800
AS29
AS29LV800
LI400
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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PDF
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S772
Abstract: tms44165
Text: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166C - AUGUST 1992 - REVISED JUNE 1995 DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS44165/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-92.
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OCR Scan
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TMS44165,
TMS44165P
262144-WORD
16-BIT
SMHS166C
TMS44165/Ps
1DQ14
S772
tms44165
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PDF
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KM416S4020
Abstract: KM416S4020AT-G
Text: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM416S4020AT
16Bitx
KM416S4020A/KM416S4021A
KM416S4020AT)
0D33D5S
KM416S4020
KM416S4020AT-G
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PDF
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MT4C16257
Abstract: No abstract text available
Text: PRELIMINARY |viic:noN 256K MT4C16256/7/8/9 16 WIDE DRAM X 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
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MT4C16256/7/8/9
512-cycle
MT4C16257/9
MT4C16258/9
40-Pin
MT4C16257
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PDF
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Untitled
Abstract: No abstract text available
Text: CYPRESS PRELIM INARY CY82C694 Pentium hyperCache™ Chipset 128KB Expansion RAM Features • Interfaces directly to hyperCache™ Chipset at 66 MHz with 0 wait states » Synchronous pipelined operations with registered in puts and outputs • 16K x 64 common I/O architecture
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CY82C694
128KB
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PDF
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Micron Quantum Devices
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY M IC R O N I QkMMVUMMHBMlM G> FLASH MEMORY 512K x 16, 1 MEG x 8 S mart V oltage , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16K B /8K -w ord b o o t block (protected) T w o 8K B /4K -w ord p ara m e te r blocks
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MT28F800B1
100ns
110ns,
150ns
576x8
48-PIN
MT2SF80081
Micron Quantum Devices
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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OCR Scan
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KM416C254B,
KM416V254B
256Kx16
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PDF
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C254D
Abstract: KM416C
Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .
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OCR Scan
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KM416C254D,
KM416V254D
256Kx16
DQODQ15
C254D
KM416C
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5416283 2 6 2 ,1 4 4 -W o rd x 1 6 -B it M u ltip o rt D R A M DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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MSM5416283
MSM5416283
144-word
16-bit
512-word
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