3KL53
Abstract: 513KL 5KR11
Text: ΰp 3'7$:8 3'7&78 3'7$78 3'7&:8 3066 3066 6&
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diode 1gw
Abstract: marking DX DIODE dx 400 C1206 1KW marking
Text: 1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier TCDU1DW – TCDU1WW 1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability
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C1206
MIL-STD-750,
diode 1gw
marking DX DIODE
dx 400
C1206
1KW marking
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Untitled
Abstract: No abstract text available
Text: Sintered Glass Passivated Ultra Fast Recovery Rectifier TCDU1DW – TCDU1WW 1.0A Sintered Glass Passivated Ultra Fast Recovery Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability High surge capacity
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C1206
MIL-STD-750,
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C1206
Abstract: 1DW 65 marking 1gw
Text: 1.0A Sintered Glass Passivated Standard Rectifier TCDT1DW – TCDT1MW 1.0A Sintered Glass Passivated Standard Rectifier Features • • • • • • • • • • Leadless chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low profile package
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C1206
MIL-STD-750,
C1206
1DW 65
marking 1gw
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diode 1gw
Abstract: C1206
Text: 1.0A Sintered Glass Passivated Fast Recovery Rectifier TCDR1DW – TCDR1MW 1.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability High surge capacity
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C1206
MIL-STD-750,
diode 1gw
C1206
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Untitled
Abstract: No abstract text available
Text: Sintered Glass Passivated FAST RECOVERY RECTIFIER TCDR1DW – TCDR1WW 1.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • Low power loss, High efficiency For surface mounted applications C1206 High current capability High surge capacity
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C1206
MIL-STD-750,
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100 kilo OHM potentiometer
Abstract: 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm
Text: PRELIMINARY TECHNICAL DATA 2-Channel, 256 Position Digital Potentiometer a AD5207 FEATURES 256 Position, 2-Channel Potentiometer Replacement 10K, 50K, 100KΩ Power Shut Down-Less than 5µA Midscale Preset +2.7 to +5.5 Single-Supply ±2.7V Dual-Supply 3-Wire SPI Compatible Serial Data Input
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AD5207
19APR
100 kilo OHM potentiometer
1 kilo ohm variable resistor
RESISTOR 10 KILO OHM
AB Electronics potentiometer
1 kilo ohm resistor specifications
20 kilo OHM potentiometer
Schematic of 100K digital potentiometer
100 KILO OHM RESISTOR
Variable resistor 50K ohm
3 pins Variable resistor 5K ohm
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2SA1110
Abstract: 2SC2590
Text: AOK AOK Semiconductor P rod uct S p ecificatio n 2SA1110 Silicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O - 1 2 6 p a c k a g e • C o m p le m e n t to typ e 2 S C 2 5 9 0 • E x c e lle n t cu rren t lc ch ara c te ris tic s o f fo rw ard
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2SA1110
2SC2590
2SA1110
2SC2590
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at38w
Abstract: No abstract text available
Text: MI-JOO Product Highlights The Ml-jOO Family of m iniaturized D C-D C converters is designed fo r M ilitary applications utilizing distributed power architectures. Based on Vicor's second generation fam ily of "zero-current-switching," component-level, D C-D C converters, the
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1-J00
-704D
I-J20)
I-J60)
-1399A
IL-STD-810
P-4855-1A
at38w
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ic 4013 data
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. SUBSYSTEMS "FLEXI-PAK" FAMILY 32K X 32 128K x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4003 IDT7M4013 FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 are high-speed, high-density I m egabit/4 megabit C M O S static RAM modules constructed
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IDT7M4003
IDT7M4013
66-pin
IDT7M4003/4013
32K/128K
ic 4013 data
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lcd wrist watch ic
Abstract: 5V piezo buzzer "buzzer" 5v 100 khz crystal 5V buzzer "Piezo Buzzer" 5v dc operated buzzer 5v Quartz wrist watch ic C1935 20PF an 7591 1.5v watch chip transistor 2F I 36935
Text: Preliminary Specification_ RCL Semiconductors Ltd. Six Digits Multiplexed LCD Watch CMOS 1C C 1935 With Alarm and Chronograph_ GENERAL DESCRIPTION C1935 is a 6 digits and 6 function watch CMOS LSI circuit with an alarm and chronograph function. It
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C1935
intermit48
lcd wrist watch ic
5V piezo buzzer "buzzer" 5v 100 khz crystal 5V buzzer "Piezo Buzzer" 5v
dc operated buzzer 5v
Quartz wrist watch ic
20PF
an 7591
1.5v watch chip
transistor 2F I
36935
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SYNERGY TTL BICMOS STATIC RAM 6 4 K 1 6 K X 4-BIT S E M IC O N D U C T O R ' ' DESCRIPTION FEATURES • Address access time, tAA: 7/10/12ns max. ■ Chip select access time, tAcs: 4/6/7nsmax. ■ Popular 16K x 4 with common I/O organization
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SY61B98-7
SY61B98-10
SY61B98-12
7/10/12ns
200mA
24-pin,
300-mil
SY61B98
536-bit
384-words-by-4bits
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IDT7M135
Abstract: IDT7M134 IDT7M145 IDT7M135S IDT7M144 7M135 R270LC
Text: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • ■ • • • • • • • • High-density 64K /128K C M O S Dual-Port RAM modules 16K x 8 (ID T 7 M 1 3 5 ) or 8K x 8 (ID T7M 134)option
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IDT7M134S
IDT7M135S
64K/128K
IDT7M135)
IDT7M134
IDT7M134/IDT7M135
LL10R
RL10L
LW10R
IDT7M135
IDT7M145
IDT7M144
7M135
R270LC
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Untitled
Abstract: No abstract text available
Text: JdfJ 2M X 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7MB4084 In teg rated Dev1ce Technology, Inc. FEATURES: DESCRIPTION: • • • • High density 16 megabit 2M x 8 static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)
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IDT7MB4084
36-pin,
IDT7MB4084
16megabit
200mV
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Untitled
Abstract: No abstract text available
Text: IDT7MB4009 2 x 16K x 16 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High Density 512K CMOS static RAM Module • Cost effective surface mount components mounted on an epoxy laminate FR-4 substrate • Packaged in a 44 pin, 600 mil wide DIP (Dual In-line
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IDT7MB4009
IDT7MB4009
7MB4009
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Z38B
Abstract: 0D51 D27ID ITD014
Text: ’H Y U N D A I HY52V255B Series _ 3 2 K w B - b l t CM 0 5 5 RAM PRELIMINARY DESCRIPTION The HYB2V256B is ahigh-spsed, low power and 32,758 x B-bits CMOS static RAM fabricated using Hyundai's high pBrformancB twin lub CMOS prnCBss technology. The HY52V256B has a data retention modB that guarantees
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HY52V255B
HYB2V256B
HY52V256B
55/70/B5/1
-100/120/150/200ns
po319IB
D27ID
1DCD6-11-MAYB4
HY62V255B
Z38B
0D51
ITD014
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Untitled
Abstract: No abstract text available
Text: M O SEL VTTEUC MS62256CLL 3 2K x 8 CMOS STATIC RAM Features Descriptions • High-speed - 70/100 ns ■ Low Power dissipation: — 385mW Max Operating — 16.5mW (Max) Standby — 0.55mW (Max) Power-down — 5pA (Max) Iqcdr ■ Fully static operation ■ All inputs and outputs directly TTL compatible
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MS62256CLL
385mW
MS62256CLL
144-bit
MS62256CLL-70PC
MS62256CLL-70FC
MS62256CLL-70NC
MS62256CLL-10PC
MS62256CLL-10FC
MS62256CLL-10NC
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t71B6
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 8K x 8-BIT IDT71B64 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 8 organization • JEDEC standard 28-pin DIP and SOJ • Fast access time and cycle time — Commercial: 8/10/12 (max.) • Produced with advanced BiCMOS high-performance
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28-pin
IDT71B64
IDT71B64
536-bit
300-mil
28pin
200mV
t71B6
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Untitled
Abstract: No abstract text available
Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)
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KM616V4002A
KM616V4002A
KM616V4002AJ
44-SQJ-400
304-bit
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Untitled
Abstract: No abstract text available
Text: Integrated Device T echnology, Inc. SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4013 FEATURES: DESCRIPTION: • The IDT7M 4003/4013 are high-speed, high-density 1 megabit/4 megabit CMOS static RAM modules constructed
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IDT7M4003
IDT7M4013
IDT7M4003/4013
32K/128K
7M4003SxxCHx
7M4013SxxCHx
7M4013SxxNK
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Untitled
Abstract: No abstract text available
Text: In teg rated Device Technology, Inc. 128K x 16 64K x 16 32K x 16 CMOS DUAL-PORT RAM SHARED MEMORY MODULE IDT7MB6036 IDT7MB6046 IDT7MB6056 DESCRIPTION: FEATURES: • High density 2 m egabit/1 m e g a b it/5 1 2 K -b it C M O S D u a l- T h e S h a re d M e m o ry M o d u le provid es tw o ports with s e p a
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IDT7MB6036
IDT7MB6046
IDT7MB6056
IDT7MB6036/6046/6056
128K/64K/32K
7MB6036
7MB6046
7MB6056
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Untitled
Abstract: No abstract text available
Text: HY62V256-0 Series «HYUNDAI 32Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V256 is a high-speed, low power and 32,768 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that
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HY62V256
HY62V256-0)
32Kx8bit
HY62V256-TO
28pin
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Untitled
Abstract: No abstract text available
Text: KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* (Max.) - Low Power Dissipation The KM616V4002B/BL is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16
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KM616V4002B/BL,
KM616V4002B/BLI
256Kx
KM616V4002B/BL
304-bit
D03L7bb
44-SOJ-400
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71282
Abstract: MIL-STD-8831
Text: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and O utputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s
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IDT71281S/L
IDT71282S/L
IDT71281S/L:
IDT71282S/L:
30/35/45/55ns
25/35/45ns
IDT71281/2S
400mW
IDT71281/2L
350mW
71282
MIL-STD-8831
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