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    1FF4000 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


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    P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512 PDF

    S29WS128R

    Abstract: sa512 S29WS512R wireless design guide 13th S29WS WS512R
    Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)


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    S29WS-R S29WS512R, S29WS256R, S29WS128R 32/16/8M S29WS128R sa512 S29WS512R wireless design guide 13th S29WS WS512R PDF

    RC28F256P33BF

    Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
    Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


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    P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KBcument; RC28F256P33BF JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E PDF

    ws512P

    Abstract: D1191 SA517 S29WS-P SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P
    Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29WS-P S29WS512P, S29WS256P, S29WS128P S29WS-P ws512P D1191 SA517 SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P PDF

    js28f256p

    Abstract: RC48F4400P0TB0EJ
    Text: 256Mb and 512Mb 256Mb/256Mb , P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE


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    256Mb 512Mb 256Mb/256Mb) P33-65nm P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, js28f256p RC48F4400P0TB0EJ PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


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    512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, PDF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


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    P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF PDF

    TSOP 48 pin flash gbit

    Abstract: JS28F00AP33BF 1FFC000
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


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    P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s TSOP 48 pin flash gbit JS28F00AP33BF 1FFC000 PDF

    MICRON mcp

    Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


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    256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, MICRON mcp PC28F256P30B PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F PDF

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507 PDF

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 PDF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


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    P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30 PDF

    JS28F256P33

    Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
    Text: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


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    P3365nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte JS28F256P33 PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,


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    512Mb, P30-65nm P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


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    P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-KByte PDF

    JS28F512P33BF

    Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


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    P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-ing JS28F512P33BF JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF PDF

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258 PDF

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM PDF

    AOS PACKING

    Abstract: No abstract text available
    Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit® Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)


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    S29WS-R S29WS512R, S29WS256R, S29WS128R 32/16/8M AOS PACKING PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


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    512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, PDF

    transistor sa210

    Abstract: SA516
    Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29WS-P S29WS512P, S29WS256P, S29WS128P S29WS-P transistor sa210 SA516 PDF

    PC28F256P30BF

    Abstract: PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE
    Text: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP


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    P30-65nm) 256-Mbit, 512-Mbit 256M/256M) 16-word 512-word 512-word 130nm; P30-65nm 130nm. PC28F256P30BF PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE PDF

    PC28F00AP

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode


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    P33-65nm) 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 128-KByte P33-65nm PC28F00AP PDF

    Untitled

    Abstract: No abstract text available
    Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29WS-P S29WS512P, S29WS256P, S29WS128P S29WS-P PDF