1G50 Search Results

1G50 Result Highlights (5)

Part	Manufacturer	Description
53611-G50-8LF	Amphenol Communications Solutions	Quickie Header, Wire to Board Connector, Double Row, 50 Positions, 2.54 mm (0.1 in.), Vertical Header 0.76 um (30 u\\.) Gold Mating Plating.
52601-G50-6LF	Amphenol Communications Solutions	Quickie Header, Wire to Board Connector, Double Row, 50 Positions, 2.54 mm (0.1 in.), Vertical Header 0.76 um (30 u\\.) Gold Mating Plating.
53611-G50-4LF	Amphenol Communications Solutions	Quickie Header, Wire to Board Connector, Double Row, 50 Positions, 2.54 mm (0.1 in.), Vertical Header 0.76 um (30 u\\.) Gold Mating Plating.
53611-G50-6LF	Amphenol Communications Solutions	Quickie Header, Wire to Board Connector, Double Row, 50 Positions, 2.54 mm (0.1 in.), Vertical Header 0.76 um (30 u\\.) Gold Mating Plating.
64991-G50-4LF	Amphenol Communications Solutions	BergStik® 2.54mm, Board To Board, Vertical 2 Row Guide Pin Header 100 Positions 2.54mm Pitch 0.76um (30u\\.) Gold Mating plating.

1G50 Price and Stock

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Walsin Technology Corporation 0402N101G500CT CAP CER 100PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0402N101G500CT	Reel	380,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00425	Buy Now
Bristol Electronics	0402N101G500CT		60,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	0402N101G500CT		10,000	12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.00432	Buy Now
Walsin Technology Corporation 0603N221G500CT CAP CER 220PF 50V C0G/NP0 0603
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DigiKey	0603N221G500CT	Cut Tape	25,881		1	1 $0.1 10 $0.045 100 $0.0201 1000 $0.01186 10000 $0.01186	Buy Now
Newark	0603N221G500CT	Reel	72,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.007	Buy Now
	0603N221G500CT	Cut Tape	24,543		10	1 - 10 $0.093 100 $0.032 1000 $0.014 10000 $0.014	Buy Now
Cal-Chip Electronics GMC10CG161G50NT CAP0603 COG 160PF 2% 50V
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DigiKey	GMC10CG161G50NT	Digi-Reel	11,850		1	1 $0.2 10 $0.114 100 $0.0701 1000 $0.04691 10000 $0.04691	Buy Now
	GMC10CG161G50NT	Cut Tape	11,850		1	1 $0.2 10 $0.114 100 $0.0701 1000 $0.04691 10000 $0.04691	Buy Now
	GMC10CG161G50NT	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.03581	Buy Now
Cal-Chip Electronics GMC21CG151G50NTD CAP0805 COG 150PF 2% 50V
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DigiKey	GMC21CG151G50NTD	Cut Tape	10,000		1	1 $0.33 10 $0.192 100 $0.1213 1000 $0.08374 10000 $0.06852	Buy Now
	GMC21CG151G50NTD	Digi-Reel	10,000		1	1 $0.33 10 $0.192 100 $0.1213 1000 $0.08374 10000 $0.06852	Buy Now
	GMC21CG151G50NTD	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.06377	Buy Now
Cal-Chip Electronics GMC21CG911G50NT CAP0805 COG 910PF 2% 50V
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DigiKey	GMC21CG911G50NT	Digi-Reel	4,000		1	1 $1.19 10 $0.741 100 $0.5039 1000 $0.37772 10000 $0.37772	Buy Now
	GMC21CG911G50NT	Cut Tape	4,000		1	1 $1.19 10 $0.741 100 $0.5039 1000 $0.37772 10000 $0.37772	Buy Now
	GMC21CG911G50NT	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.31517	Buy Now

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1G50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: C orporate Hom e \| Electronic Components \| Se gm e nts \| W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8058-1G50 Product Details	Original	8058-1G50 8058-1G50	PDF
Untitled Abstract: No abstract text available Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8058-1G50 Product Details Live Product Chat	Original	8058-1G50 8058-1G50	PDF
dynamic ram binary cell Abstract: QBA-1 qab1 Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only	Original	VG36643241AT 86-pin 1G5-0172 dynamic ram binary cell QBA-1 qab1	PDF
CI 576 Abstract: No abstract text available Text: VG26 V 18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only	Original	18165C 42-pin 400mil 50/60ns 1G5-0179 CI 576	PDF
dba1 Abstract: VG3617161ET Text: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V	Original	VG3617161ET VG3617161ET 288-word 16-bit 50-pin 166MHz, 143MHz, 125MHz 1G5-0189 dba1	PDF
VG36648041DT Abstract: VS1664648041D VS864648041D Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4	Original	VS864648041D VS1664648041D 16MX64-Bit VS1664648041D VG36648041DT) VS864648041D, PC100/JEDEC PC133 VG36648041DT	PDF
TL431I Abstract: 1G43 Text: Precision Adjustable Shunt Reference CORPORATION TL431I FEATURES • • • • • • • DESCRIPTION Trimmed 1% Bandgap Reference Nominal Temperature Range Extended to 105oC Temperature-Compensated: 30ppm/ oC Internal Amplifier with 150mA Capability Low Output Noise	Original	TL431I TL431I TL431ILP TL431ID TL4310-656-2900, 100kHz 1H-03 1H-02 1G43	PDF
5555 FAIRCHILD optocoupler Abstract: MC74HC374N 74hc14n equivalent NC7S125M5 14069 HCF4541BEY APPLICATION HCF4013BE 4026 fairchild datasheet 14543 motorola Motorola DM74LS139N Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference	Original	SCYB017A A010203 5555 FAIRCHILD optocoupler MC74HC374N 74hc14n equivalent NC7S125M5 14069 HCF4541BEY APPLICATION HCF4013BE 4026 fairchild datasheet 14543 motorola Motorola DM74LS139N	PDF
Untitled Abstract: No abstract text available Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single	Original	26/24-pin 50/60ns 127mm) 025mm) 1G5-0124	PDF
dynamic ram binary cell Abstract: No abstract text available Text: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced	Original	VG3664321 1G5-0099 dynamic ram binary cell	PDF
dba1 Abstract: VG3617161ET RR111 Text: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V	Original	VG3617161ET VG3617161ET 288-word 16-bit 50-pin 166MHz, 143MHz, 125MHz 1G5-0189 dba1 RR111	PDF
VG36641641 Abstract: VG36641641BT Text: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only	Original	VG36641641BT 16-bit 8/10ns 1G5-0127 VG36641641 VG36641641BT	PDF
sub-micro CMOS technology Abstract: No abstract text available Text: VG26 V S4260D 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicro CMOS technology and advanced CMOS circuit design technologies. Fast Page Mode allows 512 random	Original	S4260D 144-word 16-bit 40pin, 400mil VG26S4260D) VG26VS4260D) sub-micro CMOS technology	PDF
Untitled Abstract: No abstract text available Text: VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only	Original	18165C/VG26 18165D 42-pin 400mil 50/60ns 1G5-0179	PDF

tras 36ns Abstract: No abstract text available Text: VIS Preliminary VG468321C 131,072X32X2 - Bit CMOS Synchronous Graphic RAM Overview The VG468321C SGRAM is a high-speed CMOS synchronous graphics RAM containing 8M bits. It is internally configured as a dual 128K x 32 DRAM with a synchronous interface all signals are registered on	Original	VG468321C 072X32X2 12mmM 1G5-0182 tras 36ns	PDF
Untitled Abstract: No abstract text available Text: VIS VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x	Original	VG36128401BT VG36128801BT VG36128161BT VG36128401B, VG36128801B VG3664128161B 728-bit 54-pin 1G5-0183	PDF
Untitled Abstract: No abstract text available Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only	Original	18165C 42-pin 400mil 50/60ns 1G5-0179	PDF
lmg5040 Abstract: lmg5040xufc 1G5042XUFC Text: HITACHI/iOPTOELECTRONICS blE J> 44^205 D 0 1 2 b 02 3 T7 « H I T M Hi L' 1G5042XUFC LMG5040XUFC) T 'V Z '3 9 LMG5040XUFC — Built in DF signal generation pin 7 Not Connected FEATURES • ■ ■ ■ ■ OPTICAL DATA 640(W )x 480(H) dot CFL backlit type	OCR Scan	1G5042XUFC LMG5040XUFC) LMG5040XUFC HD66841 xl60H 183WX137H x480H INVC132 lmg5040 1G5042XUFC	PDF
VM83 Abstract: VG2617405C VM83217405 Text: VM 43217405C, VM83 217405C 4M ,8M x 32-Bit Dynamic RAM Module_ v/,SH Description T h e V M 4 3 2 1 7 4 0 5 C and V M 8 3 2 1 7 4 0 5 C are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/1 6 pieces of 4M x 4 DR AM V G 2617405C , and each in a standard	OCR Scan	43217405C, 217405C 32-Bit 2617405C 43217405C 50/60ns 1G5-0094 43217405C VM83 VG2617405C VM83217405	PDF
CAC10 Abstract: No abstract text available Text: VG26V4265BJ 262,144 x 16-Bit CMOS Dynamic RAM Preliminary VISJffi Description The device is CMOS Dynam ic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced C M OS circuit design technologies, it is packaged in JEDEC standard 40-pin plastic	OCR Scan	VG26V4265BJ 16-Bit 40-pin 50/60/70ns CAC10	PDF
VG46VS8325 Abstract: ic 3645 sh xaxs Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)	OCR Scan	VG46VS8325 100/83MHz 32-bit cycles/16ms 100-pin 1G5-0057 IG5-0057 ic 3645 sh xaxs	PDF
Untitled Abstract: No abstract text available Text: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM D escription The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits w ith extended d ata out access m ode. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single	OCR Scan	304x4-B 26/24-pin 26/24-P 7405E 127mm) 1G5-0124 age27	PDF
Untitled Abstract: No abstract text available Text: VIS VG26 V (S)17400E 4 ,1 9 4 ,3 0 4 x 4 - Bit CMOS Dynamic RAM D escription The device is C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single 5V only	OCR Scan	17400E 17400EJ 26/24-Pin 127mm) 1G5-0142 age25	PDF
Untitled Abstract: No abstract text available Text: VG 26 V (S)18160B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used	OCR Scan	18160B 16-Bit 42-pin 50/44-pin lG5-0037 18160BT-6 18160BT-7	PDF

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1G50 Search Results

1G50 Result Highlights (5)

1G50 Price and Stock

Walsin Technology Corporation 0402N101G500CT

Walsin Technology Corporation 0603N221G500CT

Cal-Chip Electronics GMC10CG161G50NT

Cal-Chip Electronics GMC21CG151G50NTD

Cal-Chip Electronics GMC21CG911G50NT

1G50 Datasheets Context Search

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dynamic ram binary cell

CI 576

dba1

VG36648041DT

TL431I

5555 FAIRCHILD optocoupler

Untitled

dynamic ram binary cell

dba1

VG36641641

sub-micro CMOS technology

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tras 36ns

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lmg5040

VM83

CAC10

VG46VS8325

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