Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
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1gm transistor
Abstract: 1GM sot-23 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
100mA
100mA,
100MHz
1gm transistor
1GM sot-23 transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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LMBTA05WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05WT1G
LMBTA06WT1G
S-LMBTA05WT1G
S-LMBTA06WT1G
AEC-Q101
LMBTA05
LMBTA06
LMBTA05WT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
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Untitled
Abstract: No abstract text available
Text: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23
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MMBTA06
OT-23
-55OC
150OC
OT-23
MIL-STD-202E
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SMD 1GM 2
Abstract: 1gm smd MMBTA06 SMD SOT-23 TYPE 1GM sot-23 1gm sot 23 sot-23 Marking 1h MMBTA05 MMBTA06 Marking 1GM
Text: Transistors IC SMD Type Driver Transistors MMBTA05, MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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MMBTA05,
MMBTA06
OT-23
MMBTA05
SMD 1GM 2
1gm smd
MMBTA06 SMD SOT-23 TYPE
1GM sot-23
1gm sot 23
sot-23 Marking 1h
MMBTA05
MMBTA06
Marking 1GM
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100-6 SOT-23
Abstract: 1GM x
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
OT-23
100-6 SOT-23
1GM x
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56
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MMBTA05
MMBTA06
OT-23
MMBTA55/MMBTA56)
MMBTA06
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DigRF
Abstract: N5343A DigRF v4 n534 N5344U CRC lte DIGRFv4 LTE RFIC
Text: Agilent RDX Test Solutions for DigRF N5343A DigRF Exerciser Module N5344A DigRF Analyzer Module Data Sheet • Easily debug and integrate your DigRF based RF-IC and BB-IC components • Get insight from bit level to IQ modulated RF signals • Get the greatest
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N5343A
N5344A
5989-9575EN
DigRF
DigRF v4
n534
N5344U
CRC lte
DIGRFv4
LTE RFIC
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5
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OT-23
MMBTA06LT1
100MHz
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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OT-23
MMBTA05
MMBTA06
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Untitled
Abstract: No abstract text available
Text: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central
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T0-92
CS92A
100i2,
100fi,
30TYP
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CS92A
Abstract: CS92B CS92D CS92M CS92N
Text: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue
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0DDD32cÃ
T0-92
CS92A
CS92B
CS92D
100i2,
67xVDRM,
30TYP
CS92M
CS92N
CS92A
CS92D
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55C100B
Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Text: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,
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55C60B
55C60BF
55C80B
55C80BF
55C100B
55C100BF
55C120B
55C120BF
00V/usec.
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1GM sot-23 transistor
Abstract: No abstract text available
Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage
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MMBTA06LT1
OT-23
950TPY
037TPY
550REF
022REF
1GM sot-23 transistor
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CQ92
Abstract: No abstract text available
Text: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE
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CQ92A
CQ92B
CQ92D
21o1s
CQ92
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDM — 0 8 2 88 N REV, A 5 .9 0 PIN 16 E.C.N. NUMBER AND REVISION COMMENTS [0,177] MIN PEAK WAVELENGTH PIN 1 C 0 .7 9 5 : 15.00 [0 .5 9 1 ] 0 0 .5 1 [0 .0 2 0 ] 1 6 COL 20.20 [0 .7 9 5 ] MAX 1 2.2 2.6 EMITTED COLOR:
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565nm
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Untitled
Abstract: No abstract text available
Text: Silicon Controlled Rectifiers 2N1794-1 804; 2N4371 - 4 5 7 7 Dim. Inches JJ Minimum ?= r c ^ 1 1 A B C D E F G H J K M N P R S T U “ 1 f . — ' ' ' I ’ Y f ï 1 rV - \A (TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi
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2N1794-1
2N4371
2N1794
2N1795
2N1796
2N1797
2N1798
2N1799
2N1800
2N1801
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SF500EX26
Abstract: SF500U26 thyristor tt 250 BA 250G SF500U
Text: THYRISTOR S F 5 SILICON DIFFUSED TYPE U , Y , E X 2 6 H IGH P OW E R C O NT R OL A PP LI C A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage : VpR^-. Repetitive Peak Reverse Voltage : Vrrm | •¿~0b.2±O.'¿ -1600 - 2500V . Average On-State Current
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00V//xs
SF500EX26
SF500U26
thyristor tt 250
BA 250G
SF500U
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