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    1HC SOT23 Search Results

    1HC SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    1HC SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series 3 FEATURE ƽHigh current capacity in compact package. IC =1.5 A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HQLTIG L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.2A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HQLTIG L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G

    sot-23 Marking 1Hc

    Abstract: L8050HRLT1G L8050 L8050HPLT1G L8050HQLT1G L8050HSLT1G L8050HRLT1 marking 1Hc L8050HQLTIG
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HQLTIG L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G sot-23 Marking 1Hc L8050HRLT1G L8050 L8050HPLT1G L8050HQLT1G L8050HSLT1G L8050HRLT1 marking 1Hc L8050HQLTIG

    L8050HRLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series S-L8050HQLTIG Series FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050H ƽPb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L8050HQLTIG S-L8050HQLTIG L8050H AEC-Q101 L8050HPLT1G S-L8050HPLT1G 3000/Tape L8050HPLT3G S-L8050HPLT3G 10000/Tape L8050HRLT1G

    sot-23 Marking 1Hc

    Abstract: 1HC SOT23 L8050HPLT1 L8050HPLT1G L8050HQLT1 L8050HQLT1G L8550H marking 1Hc
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050H*LT1 FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050H L8550H L8050HPLT1G L8050HQLT1 L8050HQLT1G 3000/Tape L8050HPLT1 sot-23 Marking 1Hc 1HC SOT23 L8050HPLT1 L8050HPLT1G L8050HQLT1 L8050HQLT1G L8550H marking 1Hc

    sot-23 Marking 1Hc

    Abstract: SOT-23 1HC
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series 3 FEATURE ƽHigh current capacity in compact package. IC =1.2A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HQLTIG L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G sot-23 Marking 1Hc SOT-23 1HC

    L8050HPLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. L8050HQLTIG Series S-L8050HQLTIG Series General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. 3 ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is available. 1


    Original     		PDF L8050HQLTIG S-L8050HQLTIG L8050H AEC-Q101 L8050HPLT1G S-L8050HPLT1G 3000/Tape L8050HPLT3G S-L8050HPLT3G 10000/Tape L8050HPLT1G

    L8050HQLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series S-L8050HQLTIG Series FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L8050HQLTIG S-L8050HQLTIG L8050H AEC-Q101 L8050HPLT1G S-L8050HPLT1G 3000/Tape L8050HPLT3G S-L8050HPLT3G 10000/Tape L8050HQLT1G

    sot-23 Marking 1Hc

    Abstract: SOT-23 1HC
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 27-Jul-2012 80mAdc) OT-23 sot-23 Marking 1Hc SOT-23 1HC

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050HXLT1G L8050H L8050HPLT1G 3000/Tape L8050HPLT3G 10000/Tape L8050HQLT1G L8050HQLT3G

    sot-23 Marking 1Hc

    Abstract: TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 O E=20 Vdc, I E= 0 ) 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 0.15 u Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 10-Apr-09 80mAdc) OT-23 sot-23 Marking 1Hc TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLT1 3 1 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC Max Unit 25 40 5 1500 SOT–23 V V V


    Original     		PDF L8050HQLT1 OT-23

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 200 mW EPITAXIAL PLANAR DIODES Semiconductor Mechanical Dimensions Description Pin 3 Pin 1HC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 200 mW POWER DISSIPATION E le c tr ic a l C h a r a c te r is tic s 9


    OCR Scan     		PDF OT-23 B4148 21X21X5 48X22X36cm 21X9X8 51X25X30cm