MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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BAV19
Abstract: BAV20 BAV21 FDH400
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
FDH400
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DG302 to220
Abstract: MAX724 equivalent 9532 zener MAX233 application notes MAX7219 equivalent MAX232CPE application sheet MAX238 MX7226 MAX249 MAX485 application notes
Text: November 1, 1996 RR-1J Product Reliability Report This report presents the product reliability data for Maxim’s analog products. The data was acquired from extensive reliability stress testing performed in 1995. It is separated into seven fabrication processes: 1 Standard
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DG302 to220
Abstract: MAX233 application notes zener 9514 MAX249 MAX238 9545 MAX232CPE application sheet max809 ICM7218AIPI MAX232 application notes
Text: November 1, 1996 RR-1J Product Reliability Report This report presents the product reliability data for Maxim’s analog products. The data was acquired from extensive reliability stress testing performed in 1995. It is separated into seven fabrication processes: 1 Standard
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marking 1E
Abstract: BC848
Text: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847A 1E BC847B 1F BC848A 1J BC848B 1K 2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENTS ARE RESPECTIVELY
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BC847
BC848
BC847A
BC847B
BC848A
BC848B
BC857
BC858
OT-23
marking 1E
BC848
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IN5225
Abstract: BAV19 BAV20 BAV21 DO-35 BLUE CATHODE
Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20
IN5225
BAV21
DO-35 BLUE CATHODE
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MMBT2369
Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol
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MMBT2369
MMBT2369
100mA.
OT-23
MARK 1J
HIGH SPEED SWITCHING NPN SOT23
MMBT2369 SOT23
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Untitled
Abstract: No abstract text available
Text: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol
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MMBT2369
PN2369
100mA.
MMBT2369
OT-23
PN2369
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MMBT2369
Abstract: HIGH SPEED SWITCHING NPN SOT23
Text: MMBT2369 MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. G S D SOT-23 Mark: 1J Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol
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MMBT2369
100mA.
OT-23
MMBT2369
HIGH SPEED SWITCHING NPN SOT23
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PN2369
Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
Text: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol
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MMBT2369
PN2369
100mA.
MMBT2369
OT-23
PN2369
PN2369 EQUIVALENT
HIGH SPEED SWITCHING NPN SOT23
FAIRCHILD SOT-23 MARK 30
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BAV19
Abstract: BAV20 BAV21 MARK GM DIODE IN5225A Color code diode DO-35
Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 COLOR BAND DENOTES CATHODE High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 100 150 200 200 V V V mA W IV Working Inverse Voltage
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20
BAV21
MARK GM DIODE
IN5225A
Color code diode DO-35
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BAV19
Abstract: BAV20 DIODE 1J BAV21 FDH400
Text: BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current
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BAV19
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
BAV20
DIODE 1J
BAV21
FDH400
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BC848
Abstract: No abstract text available
Text: SEMICONDUCTOR BC848 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1J 1 2 Item Marking Description Device Mark 1 BC848 hFE Grade J J, K, L * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC848
OT-23
BC848
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1nS pulse width circuit
Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
Text: FMMT2369 FMMT2369A ISSUE 3 AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns
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FMMT2369
FMMT2369A
FMMT2369R
FMMTA2369A
FMMTA2369AR
300ns
1nS pulse width circuit
9a sot23
FMMT2369A
FMMT2369
FMMT2369R
HIGH SPEED SWITCHING NPN SOT23
DSA003691
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MRGF
Abstract: LP73 UR73D LA73 LT73 NT73 RF73 RK73 RN73 SG73
Text: Appendix E pad dimensions standard soldering pad dimensions The optimum soldering pad dimensions may differ depending on soldering conditions, however, the following land dimensions are generally recommended. WK73 RK73 SG73 RN73 RN73H SR73 LT73 NT73 PT72 LA73
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RN73H
SDT73
MRGF
LP73
UR73D
LA73
LT73
NT73
RF73
RK73
RN73
SG73
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B 660 TG
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS
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BC847
BC849
BC846
BC848
BC850
BC848B
BC846A
BC846B
BC848C
BC849B
B 660 TG
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b45 sot23
Abstract: No abstract text available
Text: BC847 BC848 r i 7 SGS-THOMSON m 7# KaO B©SILECTI3 raC©i SMALL SIGNAL NPN TRANSISTORS Type M arking BC847A 1E BC847B 1F BC848A 1J BC848B 1K . SILICON EPITAXIAL PLANAR NPN TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS
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BC847
BC848
BC847A
BC847B
BC848A
BC848B
BC857
BC858
OT-23
b45 sot23
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Untitled
Abstract: No abstract text available
Text: • This Pro Electron Series ^ CES* V V Min By Its Respective TO-236 (49) 30 30 5 15 BC84BB (IK.) TO-236 (49) 30 30 5 BC&48C (1L.) TO-236 (49) 30 30 ■ (V) Min BC848A (1J.) BC849C (2C.) TO-236 (49) 30 BC850B (2F.) TO-236 (49) BC850C (2G.) (V) Min V V BE(SAT)
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OT-23
004G523
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Untitled
Abstract: No abstract text available
Text: Small Signal Diodes Type m in iR e e l O rd e r N um ber 500 pcs. d " / w 1 \ V - , 1J jL SOT23 R a tin g s m in iB a g Zlr M M ax VR 100 pcs. T rr M ax cD P a rt M a rk in g S c h e m a tic T o p V iew S ingle D iode B A S 16 M M B D 914 3 72-0016 72-0914
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100mA
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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Untitled
Abstract: No abstract text available
Text: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR
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FMMT2369
FMMT2369A
300ns
FMMT2369R
FMMTA2369A
FMMTA2369AR
FMMT2369
10iiA,
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Untitled
Abstract: No abstract text available
Text: Transistors Reel = 500pcs. SOT23 Case NPN Bag = 100pcs' m i n iR e e l O rd e r Type R a tin g s m in iB a g N um ber V j • O rd e r M d VCEO Ic hpE @Ic fx P a rt V mA M in -M a x V ce (M H z ) M a rk in g 25V 500m A N u m b e r K iS S S ! N P N G e n e ra l P u rp o se
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500pcs.
100pcs'
C848A
C848B
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23
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BCV27
BCV28
BCV47
BCV48
BCV47
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AW74
Abstract: No abstract text available
Text: SOT23 HIGH SPEED SWITCHING DIODE PAIR COMMON ANODE ISSUE 3 - JULY 1998 PIN CONFIGU RATIO N 1 A PARTM ARKING DETAILS B A W 74 - W 74 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o n tin u o u s Reverse V o lta g e VR A v e ra g e O u tp u t R e c tifie d C u rre n t
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BAV74
AW74
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