M5M4V18165CJ
Abstract: MITSUBISHI date code mitsubishi date year M5M4V18165C mitsubishi assembly year mitsubishi Manufacturing year mitsubishi year code 1048576bit DRAM
Text: MITSUBISHI LSIs Preliminary Spec. MH1V645CWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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MH1V645CWXPJ-6
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
M5M4V18165CJ
MITSUBISHI date code
mitsubishi date year
M5M4V18165C
mitsubishi assembly year
mitsubishi Manufacturing year
mitsubishi year code
1048576bit DRAM
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HY51V18164B
Abstract: HY51V18164
Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy
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HYM5V64124A
1Mx64-bit
64-bit
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
DQ0-DQ63)
1CE16-10-APR96
144pin
HY51V18164
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE Revision History Version 0.0 June 1998 • The 4th. generation of 16M DRAM components are applied for this module. KMM466F104CT1-L KMM466F124CT1-L KMM466F104CT1-L KMM466F124CT1-L DRAM MODULE KMM466F104CT1-L & KMM466F124CT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh
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KMM466F104CT1-L
KMM466F124CT1-L
KMM466F124CT1-L
1Mx16,
KMM466F10
1Mx64bits
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Untitled
Abstract: No abstract text available
Text: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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V645C
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
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ADQ37
Abstract: No abstract text available
Text: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung
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KMM466F104BT1-L
KMM466F124BT1-L
466F104BT1-L
KMM466F124BT1-L
1Mx16,
KMM466F10
1Mx64bits
1Mx16bits
400mil
ADQ37
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HY51V18164
Abstract: No abstract text available
Text: • ' M Y U H D A I — • H Y M 5 V 6 4 1 2 4 A Q - S e r ie s SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin S O J or 44/50 pin TSO PII and one 2048 bit EEPRO M on a 144 Zig Zag Dual pin glass-epoxy
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OCR Scan
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1Mx64-bit
HYM5V64124A
64-bit
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
1Mx64-blt
HYM5V64124AQG
HYM5V64124ASLQG
HYM6V64124ATQG
HYM5VS4124ASLTQG
HY51V18164
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