STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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diode ITT
Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Text: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark
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4bfl2711
LL4448
1N4448
4ba2711
diode ITT
1n4448 itt
1N4448
LL4448
QQQ317D
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ITT9014C
Abstract: TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu
Text: Alphanumerical List of Types Type Page 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S 1N4149 1N4149S 1N4150 1N4150S 1N4151 1N4151S 1N4448 1N4448S 1N4454 1N4454S 1N4731 to 1N4764 1N5226 to 1N5262 1N5226S to 1N5262S 1N5817 1N5817M 1N5818
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1N914
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4148
1N4148S
ITT9014C
TCA700Y
ITT9013H
jc5010
PVPU2204
TCA700
TVP02066
SAA1094-2
SAK215
itt8050cu
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1n4448 itt
Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Text: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34
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1N4448
DO-35
DO-34
4baP711
DO-35)
1n4448 itt
Color code diode DO-35
diode ITT specification
150D
1N4448
diode 1N4448
D1N4448
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FD300 diode
Abstract: BAX13 DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3
Text: Sem iconductors Fairchild Sem iconductors Diodes C om puter D iodes B y A sce n d in g trr G la ss p acka g e REFEREN CE T A B L E Code trr nse c M ax. Bv v o lts M in nA M ax lR FD700 FD777 BAX13 BAY71 BAY74 1N914 1N916 1N4148 1N4448 0.7 0.75 4.0 4.0 4.0
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FD700
35200F
FD777
35201D
BAX13
35202B
BAY71
35203X
BAY74
3S204R
FD300 diode
DIODE BA243
FD333
FD300
DIODE BA244
BA244
BA200
lN914
155pa3
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DIODE BA244
Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Text: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline
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BA243
BA244
277MR
27729F
BA157
3M13R
BA158
30914G
BA159
3091SE
DIODE BA244
1n4148 ITT
30M5R
DIODE BA243
ITT 1N4150
155pa3
BAX13
ITT44
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diode t 4148
Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
Text: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:
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-1N4446
1N914A
IN4446
1N914B
IN4448
diode t 4148
t 4148 diode
din 4148
diode din 4148
T 4148
diode IN 4148
din 4448
diode IN4448
4148 t
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1N914 ITT
Abstract: s0103a 1k4148 S0103 SB101B 1N4154 1N444 1N914 K150 1N444A
Text: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T* o 3 - o q SILICON DIODES General P urpose and S w itc h in g D iode s in DO-35 Package & DO-34 Package Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera
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D0014Q4
T-03-oq
DO-35
DO-34
1N914
lF-10mA
-evlBL-100Q
1K4148
-U-10to200mA
1K4152
1N914 ITT
s0103a
S0103
SB101B
1N4154
1N444
K150
1N444A
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2N3904 TO92
Abstract: No abstract text available
Text: IliUIGE HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 _ ' _ 1_ OPERATING/STORAGE TEMPERATURE RANGE -6 5 C to +200°C Peak Reverse voltage VRM (V) 100 100 100 100 50 75 35 100
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1N914
1N914A
1N914B
1N4148
1N4150
1N4151
1N4154
1N4448
1N4454
250mW/500mW
2N3904 TO92
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CECC 50001
Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
Text: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C
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DO-35
Tempera-at25Â
BA170
BA201
BAV17
BAV18
100fitoJB
BAV19
100Qto
BAV20
CECC 50001
BAV21 CECC
WG713
1N45BA
1N483A Diode
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Untitled
Abstract: No abstract text available
Text: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T *o 3 -oq SILICON DIODES G e n e ra l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a c k a g e & D O -3 4 P a c k a g e Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0
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D0014D4
1K4146
1K4152
1H4154
1N4448
O-236
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WG713
Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera Current l0 at25°C ture Tj Forward Voltage Drop Vf
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000232b
DO-35
Tempera-at25Â
BA170
BA201
BAV17
BAV18
100fitoJB
BAV19
1N4449*
WG713
1n4148 ITT
ITT3002
1N914 ITT
BAV20
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bav20 itt
Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Temperaat25°C ture Tf Forward Voltage
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DO-35
BA170
BA201
BAV17
BAV18
BAV19
1N4449*
1N4450*
1N4451*
1N4453*
bav20 itt
BAV21 ITT
WG713
1n4148 ITT
1N914 ITT
BAV20
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A2 diode
Abstract: 1N414S
Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G
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00Q13QÔ
DO-35
1N914
1N414S
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154
A2 diode
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driver AAK
Abstract: energy meter circuit diagram em 301 l and t make Ericsson vlr
Text: ERICSSO N $ Preliminary October 1998 PBL 386 61/2 Subscriber Line Interface Circuit Description Key Features The PBL 386 61/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Central Office, MUX and other telecommunications equipment. The
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2x900
1522-PBL
S-164
driver AAK
energy meter circuit diagram em 301 l and t make
Ericsson vlr
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ERICSSON dual band tmb
Abstract: Ericsson LTE
Text: ERICSSON S October 1998 PBL 386 30/1 Subscriber Line Interface Circuit Description The PBL 386 30/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.
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2x900
2x30ki2.
1522-PBL
S-164
ERICSSON dual band tmb
Ericsson LTE
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G2JS
Abstract: MLE20 "Z7M"
Text: ERICSSON g October 1998 PBL 386 21/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 21/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in DAML, FITL and other telecommunications equipment The PBL
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1522-PBL
S-164
G2JS
MLE20
"Z7M"
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Thyristor Xo 602 MA
Abstract: PED relay cross reference
Text: Preliminary ERICSSON ^ May 1997 PBL 386 40/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 40/1 Subscriber Lina Interface C ircuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecom m unications equipment.
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2x900
Thyristor Xo 602 MA
PED relay cross reference
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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24S5.4000NT
Abstract: 220 volt ac to 12 volt dc CONVERTER DIAGRAM 24S12 24S15 8s12 Calex
Text: 20 Watt NT Series Features • Fully Self Contained, No External Parts Required for Operation ■ High Power Density, up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85% ■ Overcurrent Protected and Thermal Shutdown
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94520-4S41
00D1311
24S5.4000NT
220 volt ac to 12 volt dc CONVERTER DIAGRAM
24S12
24S15
8s12
Calex
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Calex
Abstract: No abstract text available
Text: 20 Watt NT Single Series DC/DC Converters F ea tu res D e scrip tio n • Fully S elf C ontained, No External Parts R equired fo r O peration The compact 20 W att NT Series provides power densities of up to 11 W atts per cubic inch. Designed to save board space,
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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general electric deif controls
Abstract: Deif control 1N4448 BCP53 BD140 MJD350 STLC3080 TQFP44 4w-2w hybrid free circuit diagram of Crt Monitor with fault fi
Text: STLC3080 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIMINARY DATA • MONOCHIP SLIC SUITABLE FOR PUBLIC APPLICATIONS ■ IMPLEMENTES ALL KEY FEATURES OF THE BORSHT FUNCTION ■ DUALCONTROL MODE CONFIGURATION: SLAVE MODE OR AUTOMATIC ACTIVATION MODE. ■ SOFT BATTERY REVERSAL WITH PRO
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STLC3080
TQFP44
10x10)
60Vrms
-48Volt
general electric deif controls
Deif control
1N4448
BCP53
BD140
MJD350
STLC3080
TQFP44
4w-2w hybrid
free circuit diagram of Crt Monitor with fault fi
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