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    1N4448 ITT Search Results

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    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    diode ITT

    Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
    Text: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark


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    PDF 4bfl2711 LL4448 1N4448 4ba2711 diode ITT 1n4448 itt 1N4448 LL4448 QQQ317D

    ITT9014C

    Abstract: TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu
    Text: Alphanumerical List of Types Type Page 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S 1N4149 1N4149S 1N4150 1N4150S 1N4151 1N4151S 1N4448 1N4448S 1N4454 1N4454S 1N4731 to 1N4764 1N5226 to 1N5262 1N5226S to 1N5262S 1N5817 1N5817M 1N5818


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    PDF 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S ITT9014C TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu

    1n4448 itt

    Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
    Text: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34


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    PDF 1N4448 DO-35 DO-34 4baP711 DO-35) 1n4448 itt Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448

    FD300 diode

    Abstract: BAX13 DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3
    Text: Sem iconductors Fairchild Sem iconductors Diodes C om puter D iodes B y A sce n d in g trr G la ss p acka g e REFEREN CE T A B L E Code trr nse c M ax. Bv v o lts M in nA M ax lR FD700 FD777 BAX13 BAY71 BAY74 1N914 1N916 1N4148 1N4448 0.7 0.75 4.0 4.0 4.0


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    PDF FD700 35200F FD777 35201D BAX13 35202B BAY71 35203X BAY74 3S204R FD300 diode DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3

    DIODE BA244

    Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
    Text: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline


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    PDF BA243 BA244 277MR 27729F BA157 3M13R BA158 30914G BA159 3091SE DIODE BA244 1n4148 ITT 30M5R DIODE BA243 ITT 1N4150 155pa3 BAX13 ITT44

    diode t 4148

    Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
    Text: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:


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    PDF -1N4446 1N914A IN4446 1N914B IN4448 diode t 4148 t 4148 diode din 4148 diode din 4148 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t

    1N914 ITT

    Abstract: s0103a 1k4148 S0103 SB101B 1N4154 1N444 1N914 K150 1N444A
    Text: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T* o 3 - o q SILICON DIODES General P urpose and S w itc h in g D iode s in DO-35 Package & DO-34 Package Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­


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    PDF D0014Q4 T-03-oq DO-35 DO-34 1N914 lF-10mA -evlBL-100Q 1K4148 -U-10to200mA 1K4152 1N914 ITT s0103a S0103 SB101B 1N4154 1N444 K150 1N444A

    2N3904 TO92

    Abstract: No abstract text available
    Text: IliUIGE HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 _ ' _ 1_ OPERATING/STORAGE TEMPERATURE RANGE -6 5 C to +200°C Peak Reverse voltage VRM (V) 100 100 100 100 50 75 35 100


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    PDF 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 250mW/500mW 2N3904 TO92

    CECC 50001

    Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
    Text: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera­• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C


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    PDF DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 100Qto BAV20 CECC 50001 BAV21 CECC WG713 1N45BA 1N483A Diode

    Untitled

    Abstract: No abstract text available
    Text: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T *o 3 -oq SILICON DIODES G e n e ra l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a c k a g e & D O -3 4 P a c k a g e Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0


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    PDF D0014D4 1K4146 1K4152 1H4154 1N4448 O-236

    WG713

    Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf


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    PDF 000232b DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 1N4449* WG713 1n4148 ITT ITT3002 1N914 ITT BAV20

    bav20 itt

    Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage


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    PDF DO-35 BA170 BA201 BAV17 BAV18 BAV19 1N4449* 1N4450* 1N4451* 1N4453* bav20 itt BAV21 ITT WG713 1n4148 ITT 1N914 ITT BAV20

    A2 diode

    Abstract: 1N414S
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G


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    PDF 00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode

    driver AAK

    Abstract: energy meter circuit diagram em 301 l and t make Ericsson vlr
    Text: ERICSSO N $ Preliminary October 1998 PBL 386 61/2 Subscriber Line Interface Circuit Description Key Features The PBL 386 61/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Central Office, MUX and other telecommunications equipment. The


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    PDF 2x900 1522-PBL S-164 driver AAK energy meter circuit diagram em 301 l and t make Ericsson vlr

    ERICSSON dual band tmb

    Abstract: Ericsson LTE
    Text: ERICSSON S October 1998 PBL 386 30/1 Subscriber Line Interface Circuit Description The PBL 386 30/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.


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    PDF 2x900 2x30ki2. 1522-PBL S-164 ERICSSON dual band tmb Ericsson LTE

    G2JS

    Abstract: MLE20 "Z7M"
    Text: ERICSSON g October 1998 PBL 386 21/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 21/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in DAML, FITL and other telecommunications equipment The PBL


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    PDF 1522-PBL S-164 G2JS MLE20 "Z7M"

    Thyristor Xo 602 MA

    Abstract: PED relay cross reference
    Text: Preliminary ERICSSON ^ May 1997 PBL 386 40/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 40/1 Subscriber Lina Interface C ircuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecom m unications equipment.


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    PDF 2x900 Thyristor Xo 602 MA PED relay cross reference

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram

    24S5.4000NT

    Abstract: 220 volt ac to 12 volt dc CONVERTER DIAGRAM 24S12 24S15 8s12 Calex
    Text: 20 Watt NT Series Features • Fully Self Contained, No External Parts Required for Operation ■ High Power Density, up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85% ■ Overcurrent Protected and Thermal Shutdown


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    PDF 94520-4S41 00D1311 24S5.4000NT 220 volt ac to 12 volt dc CONVERTER DIAGRAM 24S12 24S15 8s12 Calex

    Calex

    Abstract: No abstract text available
    Text: 20 Watt NT Single Series DC/DC Converters F ea tu res D e scrip tio n • Fully S elf C ontained, No External Parts R equired fo r O peration The compact 20 W att NT Series provides power densities of up to 11 W atts per cubic inch. Designed to save board space,


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    PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    general electric deif controls

    Abstract: Deif control 1N4448 BCP53 BD140 MJD350 STLC3080 TQFP44 4w-2w hybrid free circuit diagram of Crt Monitor with fault fi
    Text: STLC3080 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIMINARY DATA • MONOCHIP SLIC SUITABLE FOR PUBLIC APPLICATIONS ■ IMPLEMENTES ALL KEY FEATURES OF THE BORSHT FUNCTION ■ DUALCONTROL MODE CONFIGURATION: SLAVE MODE OR AUTOMATIC ACTIVATION MODE. ■ SOFT BATTERY REVERSAL WITH PRO­


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    PDF STLC3080 TQFP44 10x10) 60Vrms -48Volt general electric deif controls Deif control 1N4448 BCP53 BD140 MJD350 STLC3080 TQFP44 4w-2w hybrid free circuit diagram of Crt Monitor with fault fi