1N4149
Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end
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1N914
1N4454
1N4149,
1N4447,
1N4449
DO-34
DO-35
13gram
1N4450
1N4451
1N4149
1N4150
1N4152
1N4153
1N4447
1N4454
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Untitled
Abstract: No abstract text available
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
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1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N4451
1N4453
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1n4149
Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
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1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N914
1N4453
1n4149
1N4153 silicon diodes
1N4151
1N4152
1N4153
1N4454
1N914
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1N4149
Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
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1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N914R
1N4453
1N4149
1N4151
1N4152
1N4153
1N4454
1N914
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11202-1
Abstract: mil-prf-19500 1n4151
Text: 1N4149-1,51-1,54-1 & 1N4446-1 – 1N4449-1 Available Screening in reference to MIL-PRF-19500 available Computer Switching Diode DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These
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1N4149-1
1N4446-1
1N4449-1
MIL-PRF-19500
1N4149,
1N4151,
1N4154
1N4446
1N4449
DO-35
11202-1
mil-prf-19500 1n4151
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1N4149
Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914 1N44471
Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature
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1N914.
1N4454
1N4149,
1N4447
1N4449
DO-34.
1N914
DO-34:
300mW
1N4149
1N4151
1N4152
1N4153
1N4454
1N914
1N44471
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1N4149
Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm
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1N4149,
1N4447
1N4449
DO-34.
DO-35
DO-34
1N914
1N41491*
1N44491'
1N4450
1N4149
1N4150
1N4151
1N4152
1N4153
1N44491
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1S2473
Abstract: 1S2471 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt 1S2787 SC-40
Text: # -f ^ — K /D io d e s ROHM CO LTD 1S2471 /1S2472/1S2473/1S2787/1SS41 40E D n 7020=]=]=] 0DDb4fiS 1 S 3 RHfl 1S2471/1S2472/1S2473 1S2787/1SS41 7: 03-0 9 y IJ 3 > X fcfii + v t - K Silicon Epitaxial Planar High-Speed Switching Diodes • iiJ I: • ^ i-ffi^ììlS l/D im e n s io n s Unit : mm
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1S2471
/1S2472/1S2473/1S2787/1SS41
1S2471/1S2472/1S2473
1S2787/1SS41
DO-35)
DO-35
SC-40
1S2787
1S2473
1s2472
1N3606
1SS41
1S247
1n4148 ITT
1n914b itt
SC-40
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