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    Microchip Technology Inc 1N5195

    DIODE GEN PURP 180V 200MA DO35
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    Microchip Technology Inc 1N5195UR

    DIODE GP 180V 200MA DO213AA
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    Microchip Technology Inc 1N5195-TR

    DIODE GEN PURP 180V 200MA DO35
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    Microchip Technology Inc JAN1N5195

    DIODE GEN PURP 180V 200MA DO35
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    Microchip Technology Inc 1N5195UR-TR

    DIODE GP 180V 200MA DO213AA
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    1N5195 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5195 Microsemi GENERAL PURPOSE SILICON DIODE Original PDF
    1N5195 Microsemi LL-35 High Voltage - Current Low Leakage Glass Diodes Original PDF
    1N5195 BKC International 180 V, 500 mW silicon diode Scan PDF
    1N5195 Microsemi General Purpose Silicon Diodes Scan PDF
    1N5195 Microsemi Data Book 1983 Scan PDF
    1N5195 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5195 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5195 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N5195 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5195 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5195+JAN Defense Electronics Supply Center 200mA Iout, 200V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5195+JANTX Defense Electronics Supply Center 200mA Iout, 200V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5195.TR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5195UR Microsemi GENERAL PURPOSE SILICON DIODE Original PDF
    1N5195UR Microsemi LL-35 High Voltage / Current Low Leakage Glass Diodes Original PDF

    1N5195 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5195UR

    Abstract: CDLL5195 DO-213AA LL5195
    Text: FEATURES 1N5195UR • 1N5195UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL5195, CDLL5195, & MLL5195 MAXIMUM RATINGS AT 25 °C


    Original     		PDF 1N5195UR 1N5195UR LL5195, CDLL5195, MLL5195 500mW 200mA MILPRF-19500/118 DO-213AA CDLL5195 LL5195

    dc dc for CDI Circuit

    Abstract: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, dc dc for CDI Circuit 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34

    lN5401

    Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20


    Original     		PDF 1N5179 1N4512 1N415S 1N4953 BAT18 01FSO 01NSO 1N4005 1N4005L 1N3251 lN5401 4B20Y 4B10Y 4B40Y ln5400 E100S2 1N1088 PX4A01 1N3231

    1N5195

    Abstract: No abstract text available
    Text: FEATURES 1N5195 • • • • • 1N5195 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


    Original     		PDF 1N5195 1N5195 MIL-PRF-19500/118 500mW 200mA MILPRF-19500/118 DO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N5195+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)


    Original     		PDF 1N5195 Current200m Voltage200 Current25n StyleDO-35

    1N5194

    Abstract: 1N5195 1N5196
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


    Original     		PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5194 1N5195 1N5196

    Untitled

    Abstract: No abstract text available
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR,

    1N5196

    Abstract: 1N5194 JANTX 1N5194 1N5195
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


    Original     		PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5196 1N5194 JANTX 1N5194 1N5195

    CDLL5195

    Abstract: CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, CDLL5195 CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    LL-35

    Abstract: DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
    Text: 1N5194UR thru 1N5196UR LL-35 High Voltage / Current Use Advantages Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    Original     		PDF 1N5194UR 1N5196UR LL-35 DO-213AA 100mA 1N5194 1N5195 1N5196 DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR

    LDS-0034

    Abstract: 1N5195UR DO-213AA
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


    Original     		PDF MIL-PRF-19500/118 1N5195UR 500mW 200mA MILPRF-19500/118 DO-213AA LDS-0034 1N5195UR

    1N5195

    Abstract: LDS-0033
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


    Original     		PDF MIL-PRF-19500/118 1N5195 500mW 200mA MIL-PRF19500/118 DO-35 LDS-0033 1N5195

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    1N626

    Abstract: 1N658 DSAIH000251 1N661
    Text: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60


    OCR Scan     		PDF DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 DSAIH000251 1N661

    BKC Semiconductors

    Abstract: No abstract text available
    Text: DO-35 High Voltage I Current Use Advantages 1 1N5194 thru 1N5196 Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


    OCR Scan     		PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 BKC Semiconductors

    in5242

    Abstract: 1N5102 in5227 in5239 IN5228 IN5240 MZ240 IN5238 1N5104 IN5226
    Text: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0


    OCR Scan     		PDF 1N5102 1N5103 1N5104 1N5105 1N5106 1N5107 1N5108 1N5109 1N5110 1N5111 in5242 in5227 in5239 IN5228 IN5240 MZ240 IN5238 IN5226

    IC 7447 A

    Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
    Text: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194


    OCR Scan     		PDF DO-35 IC 7447 A 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B

    IN5240

    Abstract: in5239 in5242 IN5243 IN5228 in5247 zener diode IN5227 1N5110 1N5104 IN5245
    Text: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0


    OCR Scan     		PDF 1N5102 1N5103 1N5104 1N5105 1N5106 1N5107 1N5108 1N5109 1N5110 1N5111 IN5240 in5239 in5242 IN5243 IN5228 in5247 zener diode IN5227 IN5245

    Zener Diode 4148

    Abstract: zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER
    Text: B K C INTERNATIONAL □ 3E D | 1 1 7 3 r/HJ 1 W SILICON ZENER DIODES 1N4728 through I > .I Ï Ü Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation ELECTRICAL CHARACTERISTICS DO-41 500mW 3.33 mW/°C ,ii9* mim ait


    OCR Scan     		PDF DQQQ271 1N4728 1N4752 500mW DO-41 1N5194 1N5195 1N5196 Zener Diode 4148 zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER

    1N626

    Abstract: BA170 1N458 1N461A hep silicon diode 1N251 1N462A 1N627 BAV17 BAV18
    Text: 0 K C INTERNATIONAL • 30E D ■ 1171163 0000302 1 ■ " p BKC 2000 Series * General Purpose Silicon Diodes in DO-35 Package ■ ■ ■ ■ P eak Inverse VoHage PIV Max avg Rectified Current (l0 ) (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF)


    OCR Scan     		PDF U711M D0B0302 DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N458 hep silicon diode 1N627

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    diode 483b

    Abstract: 483B BY100 JAN1N marking E 1n diode
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).


    OCR Scan     		PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5194, 1N5196. 1N486B, 1N5194- diode 483b 483B BY100 JAN1N marking E 1n diode