1N5337B
Abstract: 1N53 ma 1N5364B 1N53 1N5333B 1N5334B 1N5335B 1N5336B 1N5338B 1N5339B
Text: LESHAN RADIO COMPANY, LTD. 5W 1N53*B Series Zener Diodes . 5W DO-15 . Zener voltage regulator diodes . Modled plastic zener diodes . Complete voltage range_3.3 to 200volts . We declare that the material of product compliance with RoHS requirements. 1N53* B Series
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DO-15
200volts
IZT00
1N5337B
1N53 ma
1N5364B
1N53
1N5333B
1N5334B
1N5335B
1N5336B
1N5338B
1N5339B
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ka-band mixer
Abstract: 3004 diode Ka-band 1N53
Text: 1N53 SILICON MIXER DIODE PACKAGE STYLE DO- 36 DESCRIPTION: The ASI 1N53 is a Silicon Mixer Diode Designed for low noise performance in Ka-Band Applications Operating up to 35 GHz. FEATURES: • • Low Noise Fugure Wider Bandwith than cartridge diodes inX Band
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982-1200e
ka-band mixer
3004 diode
Ka-band
1N53
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1N53 ma
Abstract: 1N536 1N5333B-D 1N53XX 1N5334B
Text: 1N53 Series 5 Watt Surmetict 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead,
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1N5333B/D
1N53 ma
1N536
1N5333B-D
1N53XX
1N5334B
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1N5349B
Abstract: 1N5334B
Text: 1N53 Series 5 Watt Surmetict 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead,
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017AA
1N5333B/D
1N5349B
1N5334B
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Untitled
Abstract: No abstract text available
Text: 1N53 Series 5 Watt Surmetict 40 Zener Voltage Regulators This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial lead,
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017AA
1N5333B/D
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94GP
Abstract: 1N53 1N53 ON
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.4 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
14-Oct-05
94GP
1N53
1N53 ON
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1N53
Abstract: 1N5391G 1N5399G
Text: 1N5391G - 1N5399G 1.5A GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material - UL Flammability
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1N5391G
1N5399G
DO-15
MIL-STD-202,
DS30194
1N53
1N5399G
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1N53
Abstract: 1N5391G 1N5399G
Text: 1N5391G - 1N5399G 1.5A GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material - UL Flammability
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1N5391G
1N5399G
DO-15
MIL-STD-202,
DS30194
1N53
1N5399G
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Untitled
Abstract: No abstract text available
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.4 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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1N5391GP
1N5399GP
MIL-S-19500
22-B106
DO-204AC
DO-15)
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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1N53
Abstract: 1N5391GP 1N5399GP DO-204AC JESD22-B102 J-STD-002
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than
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1N5391GP
1N5399GP
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
18-Jul-08
1N53
1N5399GP
DO-204AC
JESD22-B102
J-STD-002
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1N5391G thru 1N5399G 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.5A * Construction utilizes void-free molded plastic technique
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1N5391G
1N5399G
DO-15,
MIL-STD-750,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
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DO-15
Abstract: No abstract text available
Text: 1N5391G THRU 1N5399G GENERAL PURPOSE GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A FEATURE DO-15\DO-204AC Molded case feature for auto insertion Glass Passivated junction High current capability Low leakage current High surge capability
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1N5391G
1N5399G
DO-15\DO-204AC
C/10sec/0
UL-94
DO-15
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1N53
Abstract: 1N5391G 1N5399G
Text: 1N5391G THRU 1N5399G GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction
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1N5391G
1N5399G
MIL-S-19500
DO-15
MIL-STD-750,
1N53
1N5399G
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Untitled
Abstract: No abstract text available
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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1N5391GP
1N5399GP
MIL-S-19500
DO-204AC
DO-15)
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
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1N53
Abstract: 1N5391G 1N5399G
Text: LESHAN RADIO COMPANY, LTD. 1N5391G thru 1N5399G 1.FEATURES General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.5A * Construction utilizes void-free molded plastic technique
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1N5391G
1N5399G
DO-15,
MIL-STD-750,
decla10
50mVp-p
DO-15
1N53
1N5399G
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1N53
Abstract: 1N5391GP 1N5399GP DO-204AC
Text: 1N5391GP THRU 1N5399GP Glass Passivated Junction Rectifier Reverse Voltage 50 to 1000 V Forward Current 1.5 A DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
50mVp-p
1N53
1N5399GP
DO-204AC
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Untitled
Abstract: No abstract text available
Text: 1N539xGP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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1N539xGP
22-B106
DO-204AC
DO-15)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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1N5391GP
Abstract: 1N5399GP DO-204AC JESD22-B102D J-STD-002B 94GP
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
1N5399GP
DO-204AC
JESD22-B102D
J-STD-002B
94GP
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1N53
Abstract: 1N5391GP 1N5399GP DO-204AC 1N53 ON
Text: 1N5391GP thru 1N5399GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers 0.034 0.86 0.028 (0.71) Dia. DO-204AC (DO-15) 1.0 (25.4) min. * d e t n e t Pa 0.300 (7.6) 0.230 (5.8) Dimensions in inches and (millimeters)
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1N5391GP
1N5399GP
DO-204AC
DO-15)
MIL-S-19500
50mVp-p
08-Jul-02
1N53
1N5399GP
DO-204AC
1N53 ON
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1N5391GP
Abstract: 1N5399GP DO-204AC J-STD-002 1N53 ON
Text: 1N5391GP thru 1N5399GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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1N5391GP
1N5399GP
MIL-S-19500
DO-204AC
DO-15)
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
1N5399GP
DO-204AC
J-STD-002
1N53 ON
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1N53
Abstract: 1N5391GP 1N5399GP DO-204AC
Text: 1N5391GP THRU 1N5399GP GLASS PASSIVATED JUNCTION RECTIFIER * Reverse Voltage - 50 to 1000 Volts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction
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1N5391GP
1N5399GP
MIL-S-19500
DO-204AC
50mVp-p
1N53
1N5399GP
DO-204AC
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zenor Diode 622
Abstract: No abstract text available
Text: 1N53 SERIES High Power Zener Diode Voltage Range 8.2 - 200 Volts 5 Watt Steady State 0.94 ( 1 . 09 ) FEATURES • ■ ■ ■ ■ ■ Glass Passivated Junction High surge capabilities +/-5% surge voltage tolerance on nominal Vz, as standard 100% Surge tested
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OCR Scan
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MIL-STD-202
st140
D00G4DS
zenor Diode 622
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