Untitled
Abstract: No abstract text available
Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · Guard Ring Die Construction for Transient Protection · Lead Free Finish, RoHS Compliant Note 5 Low Power Loss, High Efficiency High Surge Capability
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1N5817
1N5818
1N5819
DO-41
J-STD-020C
MIL-STD-202,
DS23001
1N5817-1N5819
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1N5817 SPICE
Abstract: 1N5819a 1n5818b
Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 5 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency
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1N5817
1N5818
1N5819
DO-41
J-STD-020C
MIL-STD-202,
1N5817-A
1N5817-B
1N5817 SPICE
1N5819a
1n5818b
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Untitled
Abstract: No abstract text available
Text: 1N5817 . 1N5819 1N5817 . 1N5819 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 DO-15 DO-204AC Weight approx. Gewicht ca. 0.4 g
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1N5817
1N5819
DO-15
DO-204AC
UL94V-0
1N5818
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1N5817
Abstract: 1n5819 die datasheets diode 1n5818 datasheets diode 1n5819 1N5818 1N5819 DO-204AC
Text: 1N5817 . 1N5819 1N5817 . 1N5819 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-15 DO-204AC Weight approx. Gewicht ca.
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1N5817
1N5819
DO-15
DO-204AC
UL94V-0
1N5818
1N5817
1n5819 die
datasheets diode 1n5818
datasheets diode 1n5819
1N5818
1N5819
DO-204AC
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1N5817 SPICE
Abstract: No abstract text available
Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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PDF
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1N5817
1N5818
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
1N5817 SPICE
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1n5819 die
Abstract: datasheets diode 1n5819 1N5817 1N5818 1N5819 DO-204AC
Text: 1N5817 . 1N5819 1N5817 . 1N5819 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 DO-15 DO-204AC Weight approx. Gewicht ca. 0.4 g
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Original
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PDF
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1N5817
1N5819
DO-15
DO-204AC
UL94V-0
1N5818
1n5819 die
datasheets diode 1n5819
1N5817
1N5818
1N5819
DO-204AC
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1n5819
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1n5819
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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PDF
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-1N5819TR-M3
VS-1N5819-M3
1n5819 vishay make
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Untitled
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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Original
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PDF
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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Original
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PDF
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
VS-1N5819TR-M3
VS-1N5819-M3
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diode 1N5819
Abstract: No abstract text available
Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low
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1N5819
1N5819
diode 1N5819
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1N5819
Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819
1N5817-1N5819
datasheets diode 1n5818
DIODE 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
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1N5817-1N5819
Abstract: 1N5817 1N5818 1N5819
Text: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
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Original
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
1N5818
DS23001
1N5817-1N5819
1N5817-1N5819
1N5818
1N5819
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1n5819 die
Abstract: 1N5817 1N5817-1N5819 1N5818 1N5819
Text: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
1N5818
DS23001
1N5817-1N5819
1n5819 die
1N5817-1N5819
1N5818
1N5819
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|
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datasheets diode 1n5818
Abstract: datasheets diode 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB 1N5819 1N5819-T3
Text: 1N5817 – 1N5819 W TE PO WE R SEM IC O ND UC TO R S 1.0A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
datasheets diode 1n5818
datasheets diode 1n5819
1N5817
1N5817-T3
1N5817-TB
1N5818
1N5818-T3
1N5818-TB
1N5819
1N5819-T3
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UF4007 SMD
Abstract: 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD
Text: General Semiconductor Rectifiers and Voltage Suppressors Schottky Rectifiers Mfr.Õs Type IF AV (A) 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SS14 SS16 SGL41-40 SS34 MBRB1045 MBRB1060 MBRB2045CT MBR745 MBR1045 MBR1060 MBR1645 MBR2045CT MBR2545CT MBR3045PT
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DO-204AC
DO-15)
1N5817
DO-204AL
DO-41)
1N5818
1N5819
UF4007 SMD
1N5822 SMD
smd UF4007
SS34 DO-214AC
1n5408 smd
SMD DO-214AC
SMA UF4007
smd package P6KE33a
1N5822 SMD PACKAGE
1N4004 SMD
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DS23001
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
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1N5819/50SQ100
Abstract: No abstract text available
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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Original
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PDF
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1N5817
1N5819
DO-41
DO-41,
MIL-STD-202,
1N5819/50SQ100
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Untitled
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
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Original
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
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1N5817
Abstract: 1N5818 1N5819 DRL754
Text: SILICON RECTIFIER DICE continued IC5819 DIE NO. LINE SOURCE — DRL754 This die provides performance equal to or better than that of the following device types: 1N5817 1N5818 1N5819 Designed for Schottky Barrier low-voltage high-frequency rectifier applications.
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OCR Scan
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PDF
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IC5819
DRL754
1N5817
1N5818
1N5819
30x30
1N5819
DRL754
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N5818
Abstract: 1N581s 1n5819 die 1N58 1N5817 1N5817-1N5819 1N5818 1N5819
Text: 1N5817-1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
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OCR Scan
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PDF
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1N5817
1N5819
MIL-STD-202,
DO-41
DS23001
1N5817-1N5819
N5818
1N581s
1n5819 die
1N58
1N5818
1N5819
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N5818
Abstract: n5819
Text: 1N5817 - 1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER / u T E M ir I POWERSEMICONDUCTOR J Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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PDF
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1N5817
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
N5818
n5819
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N5817
Abstract: N5818 1N58 N5819 1N581 1n5819 die 1N5817 1N5817-1N5819 1N5818 1N5819
Text: 1N5817-1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER /l i t e w i i / POWERSEMICONDUCTOR I Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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PDF
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1N5817-1N5819
MIL-STD-202,
DS23001
N5817-1N5819
N5817
N5818
1N58
N5819
1N581
1n5819 die
1N5817
1N5817-1N5819
1N5818
1N5819
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Untitled
Abstract: No abstract text available
Text: • 1N5819 AVAILABLE IN JANHC AND JANKC • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD5817 thru CD5819 and CD6759 thru CD6761 and CD1A20 thru CD1A100 MAXIMUM RATINGS
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OCR Scan
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PDF
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1N5819
CD5817
CD5819
CD6759
CD6761
CD1A20
CD1A100
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