DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
DIODE 1N5822
1N5820RL
1N5821
1N5821RL
1N5822RL
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PDF
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FULL WAVE bridge RECTIFIER CIRCUITS
Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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Original
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE bridge RECTIFIER CIRCUITS
1N5821
TP2050
1N5820-D
Motorola 1N5820
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PDF
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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PDF
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1N5821
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
Surfa5820
1N5821
1N5821
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PDF
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1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
1N5822RL
1N5820RL
1N5821
1N5821RL
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
SurfaN5820
1N5821
1N5821
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PDF
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1N5822
Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
DIODE 1N5822
FULL WAVE RECTIFIER CIRCUITS
1N5820-D
1N5822 data sheet
1N5822 PACKAGE
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
sine wave inverter circuit diagram
1N5820RL
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PDF
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
FULL WAVE RECTIFIER CIRCUITS
half bridge LLC inverter
"Power Diode"
10 Ampere Schottky bridge
rectifier diode assembly
THERMAL RUNAWAY IN RECTIFIER
DIODE T28
3 diodes 3 phase half-wave rectifier
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PDF
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1N5822 PACKAGE
Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5822 PACKAGE
1N5821
half wave rectifier LLC
1N5820G
1N5820RL
1N5820RLG
1N5821G
1N5821RL
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PDF
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FULL WAVE RECTIFIER CIRCUITS
Abstract: schottky rectifier motorola mbr THERMAL RUNAWAY IN RECTIFIER TP2050 1N5820-D 1N5820 1N5821 1N5822
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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Original
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE RECTIFIER CIRCUITS
schottky rectifier motorola mbr
THERMAL RUNAWAY IN RECTIFIER
TP2050
1N5820-D
1N5821
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PDF
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5820
Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820RL
1N5821
1N5821RL
1N5822RL
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PDF
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1N5822
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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Original
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1N5820,
1N5821
1N5822
DO-201AD
2002/95/EC
2002/96/EC
DO-201AD
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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UF4007 SMD
Abstract: 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD
Text: General Semiconductor Rectifiers and Voltage Suppressors Schottky Rectifiers Mfr.Õs Type IF AV (A) 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SS14 SS16 SGL41-40 SS34 MBRB1045 MBRB1060 MBRB2045CT MBR745 MBR1045 MBR1060 MBR1645 MBR2045CT MBR2545CT MBR3045PT
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DO-204AC
DO-15)
1N5817
DO-204AL
DO-41)
1N5818
1N5819
UF4007 SMD
1N5822 SMD
smd UF4007
SS34 DO-214AC
1n5408 smd
SMD DO-214AC
SMA UF4007
smd package P6KE33a
1N5822 SMD PACKAGE
1N4004 SMD
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability
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Original
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1N5820,
1N5821,
1N5822
22-B106
DO-201AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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1N5822 data sheet
Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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Original
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1N5820,
1N5821
1N5822
DO-201AD
2002/95/EC
2002/96/EC
08-Apr-05
1N5822 data sheet
1N5820
1N5821
1N5822
JESD22-B102D
J-STD-002B
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PDF
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1N5822 PACKAGE
Abstract: 1N5820 1N5820-E3/54 1N5822 data sheet 1N5821 1N5822 JESD22-B102D J-STD-002B
Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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Original
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1N5820,
1N5821
1N5822
DO-201AD
2002/95/EC
2002/96/EC
08-Apr-05
1N5822 PACKAGE
1N5820
1N5820-E3/54
1N5822 data sheet
1N5821
1N5822
JESD22-B102D
J-STD-002B
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PDF
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mur860 diode
Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4933
1N4934
1N4935
mur860 diode
MR854 diode
rectifier diode 20 amp 800 volt
50 Amp current 512 volt diode
rectifier diode 4 amp 600 volt
MUR1560 DATA
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PDF
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n5822
Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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OCR Scan
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1N5820/D
1N5820
1N5821
1N5822
1N5B22
n5822
diode marking r6j
SCHOTTKY BRIDGE RECTIFIERS
Motorola 1N5820
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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OCR Scan
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
1N5821
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PDF
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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OCR Scan
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1N5817
1N5618
1N5818
1N5819
1N5820
1N5821
MDA2501
pbl302
g1756
g1756 Diode
MDA2502
MDA970A6
MDA3510
MDA2500
MDA3502 Bridge rectifier
mda970a1
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PDF
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1N5821
Abstract: 1N5820 1N5822 D0201AD
Text: 3 Amp Schottky Rectifier 1N5820, 1N5821, 1N5822 M illim eter Dim. Inches Minimum A B C D .188 1.00 .285 .0 « Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dio. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number Working
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OCR Scan
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1N582Q,
1N5821,
1N5822
D0201AD
1N5820
1N5821
1N5820,
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PDF
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