1n821
Abstract: LM390
Text: 1N821 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N821 Availability Online Store Diodes
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1N821
1N821
STV3208
LM3909N
LM390
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1N821
Abstract: 1N823 1N825A 1N825 ZENER 1N827 zener 1n825 1N825 Motorola motorola zener diodes 1N825 1N829
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
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1N821
1N823
1N825
1N827
1N829
DO-204AH
DO-35
1N825A
1N825 ZENER
zener 1n825
1N825 Motorola
motorola zener diodes
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1N821
Abstract: 1N827 1n829a 1N825 1N823 1N827A 1N823A 1N825A motorola ZENER 1N825 Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
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1N821
1N823
1N825
1N827
1N829
DO-35
1n829a
1N827A
1N823A
1N825A
motorola ZENER
1N825 Motorola
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Zener Diode 3v 400mW
Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current
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073713S
250mW,
I713S
DQQD114
Zener Diode 3v 400mW
1n821 "cross-reference"
1N825 apd
1N821-1N829
1n4575a "cross-reference"
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Untitled
Abstract: No abstract text available
Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current
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073713S
250mW,
DO-35
3713S
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1N3157A
Abstract: motorola 239 zener AMERICAN POWER DEVICES 1N938
Text: AMERICAN POWER DEVICES S'lE D LVJ 0737135 • • • • • 5 5 630 • A P D T r ^ - t o AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference to Motorola part numbers. For applications where output voltages must remain within narrow limits during changes in input voltage,
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DO-35
00DD115
1N3157A
motorola 239 zener
AMERICAN POWER DEVICES 1N938
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mc7812
Abstract: MTS102/D
Text: MOTOROLA Order this document by MTS102/D SEMICONDUCTOR TECHNICAL DATA MTS102 MTS103 MTS105 Silicon Temperature Sensors Designed for use in temperature sensing applications in automotive, consumer and industrial products requiring low cost and high accuracy.
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MTS102/D
MTS102
MTS103
MTS105
MTS102:
226AA
MTS102/D*
mc7812
MTS102/D
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1N935
Abstract: No abstract text available
Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case
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00000S1
DO-35
00DD115
1N935
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B0239A
Abstract: No abstract text available
Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781
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D73713S
DO-35
3713S
B0239A
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IN942
Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case
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00000S1
DO-35
00DD115
IN942
itt is 2.5-400
1N3156
1N3155
ITT GUIDE diode zener
ITT zener diode
AMERICAN POWER DEVICES 1N938
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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1N3155
Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781
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D73713S
DO-35
00DD115
1N3155
1N9351
AMERICAN POWER DEVICES 1N938
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UJT 2N2646
Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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HBD854/D
Jun-2005
DL150/D
NLAS3158/D
UJT 2N2646
2N2646 pin diagram
UJT-2N2646 PIN DIAGRAM DETAILS
UJT pin diagram 2N2646
pin diagram of UJT-2N2646
GE Transient Voltage Suppression Manual
UJT THEORY AND CHARACTERISTICS
957B
MDA2500
pn junction DIODE 1N4001
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UJT 2N2646
Abstract: UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode
Text: BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead
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BZX85C3V3RL
DO-41
204AL)
UJT 2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
UJT pin diagram 2N2646
UJT 2N2646 specification
diode zener BZX 61 C 10
UJT 2N2646 PIN VIEW
pin diagram of UJT-2N2646
varistor pdz 320
BZX 460 zener diode
1N4742A 12 volt zener diode
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UJT 2N2646 specification
Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6373
1N6381
ICTE-36,
MPTE-45)
UJT 2N2646 specification
GE Transient Voltage Suppression Manual
Triac motor speed control
UJT-2N2646 PIN DIAGRAM DETAILS
marking dp U1 sot363
UJT pin identification
TO-220 MOS
UJT 2N2646
DO41 PACKAGE diode marking S6
sine wave UPS inverter circuit diagram
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1N827A
Abstract: 1n825
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823.A 1N825.A 1N827.A 1N829.A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passi vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
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1N821
1N823
1N825
1N827
1N829
DO-204AH
DO-35
1N827A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passi vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
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1N821
1N823
1N825
1N827
1N829
DO-35
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DO-204AA
Abstract: JEDEC do-204aa MZ605 1N4782 1N4771A DO-204AA Package 1N4770A 1N4773A 1N4773 1N4772
Text: For applications w here output voltage must remain within narrow limits during changes in input voltage, load resistance and temperature. Motorola guarantees all References D e vices to fall within the specified maximum voltage variations, A V z, at the specifically indicated test temperatures and test
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DO-204AA
DO-204AH
DO-35)
PPM/1000
MZ605
MZ610
MZ620
JEDEC do-204aa
1N4782
1N4771A
DO-204AA Package
1N4770A
1N4773A
1N4773
1N4772
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1n4573
Abstract: 1n4573a die 1N827A 1n4579 10823a 1C45 1n829 1n4573 die
Text: M O T O R O L A SC O I O D E S / O P T O l 6367255 MOTOROLA SC 34 <D I O D E S / O P T O DE | b3fci7S55 0 0 3 0 1 1 0 3 | 34C 38118 T -//- D 0 5" SILICON ZENER DIODE DICE continued) 1C821 & 1C4565 — SERIES DIE NO. LINE SOURCE — DZD400 This die provides performance equal to or better than that
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b3fci7S55
DZD400
1C821
1C4565
1N821
1N829
1N4565
1N4584
1N4765
1N4784
1n4573
1n4573a die
1N827A
1n4579
10823a
1C45
1n4573 die
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MTS102 - silicon temperature sensor
Abstract: MTS102 motorola mts 102
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTS102 MTS103 MTS105 Silicon Tem perature Sensors D esign ed fo r use in te m p e ra tu re se n sin g a p p lic a tio n s in a u to m o tive , consum er and industrial products requiring low cost and high accuracy. •
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MTS102:
MTS102
MTS103
MTS105
O-226AA
MTS102,
1N821
MTS102 - silicon temperature sensor
motorola mts 102
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MTS102
Abstract: MTS102 - silicon temperature sensor MTS105 MTS103 ATC sensor transistor motorola 2n2646 2N2646 of595 CTO-92
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T S 1 02 M TS103 M T S 1 05 S ilico n T e m p e ra tu re Sensors Designed for use in tem perature sensing applications in automotive, consumer and industrial products requiring low cost and high accuracy. • Precise Temperature Accuracy Over Extreme Temperature MTS102: ± 2°C
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MTS102:
MTS102
MTS103
MTS105
O-226AA
CTO-92)
mts102,
MTS102 - silicon temperature sensor
MTS105
ATC sensor
transistor motorola 2n2646
2N2646
of595
CTO-92
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ma 1458
Abstract: MZ3157 IN821 MZ827A MZ3154 MZ3156 MZ821 MZ823 1n823 equivalent MZ827
Text: b £ O ?& > O UJ CO Ì¡ u lg io O O, lu ; s o n i a p è 2 « £ c 2 > . E3 £ o o u .5 n fa c « a 2 E <oz X o uj z U lte i§ s! I - P UJ < t oc acccc < Ui Ui CCÛ-z S uj UJ N S a i £0 ö> a» E . Q) E ? $ Q i H m m h . CM CM CM CM OOOOOO se io +i un u o o ,
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MZ821
MZ823
MZ825
MZ827
MZ935
MZ938
MZ941
MZ944
MZ3154
MZ3156
ma 1458
MZ3157
IN821
MZ827A
1n823 equivalent
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2u20 diode
Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors
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1-800-232-CODI
1N6003B
1N6004B
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
1N6010B
1N6011B
2u20 diode
2U39 diode
1N4C07
IN6016
IN4688
1N4C03
1N4C02
HRG1000
1N1989B
1N218
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MOTOROLA POWER TRANSISTOR
Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
Text: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.
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