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1N831 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
1N831	MicroMetrics	X Band Point Contact Mixer Diode	Original	PDF
1N831	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N831	Unknown	Silicon Point Contact Mixer Diodes	Scan	PDF
1N831	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N831	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N831A	MicroMetrics		Original	PDF
1N831A	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF
1N831A	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N831A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N831A	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N831A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N831AM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N831B	MicroMetrics		Original	PDF
1N831B	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF

1N831B	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N831B	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N831B	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N831B	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N831BM	Advanced Semiconductor	Silicon Point Contact Mixer Diode	Scan	PDF
1N831BM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

1N831 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Microwave Mixer Diodes Abstract: No abstract text available Text: 1N831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 1N831 Availability Online Store Diodes	Original	PDF	1N831 1N831 Military/High-Rel00 STV3208 Microwave Mixer Diodes
1N831 Abstract: mixer diode Text: 1N831 SILICON MIXER DIODE DESCRIPTION: PACKAGE STYLE DO- 7 The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS	Original	PDF	1N831 1N831 mixer diode
cp4071 Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	PDF	68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
1N831 Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and	Original	PDF	1N831 1N831A 1N831B 1N831C 1N832 1N832A 1N832B 1N832C 1N831 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	PDF	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Untitled Abstract: No abstract text available Text: MIL-S-19$ÛO/35>2 EL AMENDMENT 1 10 September 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A Page 3 Paragraph h3«1 , T est co n d itio n s, change "P»5«0 raw” to read: "PO .i? ttw11 Custodian: Arrny-KT. Preparing a c t i v i t y :	OCR Scan	PDF	MIL-S-1950O/35 5961-A36U
JAN1N23WG Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED	OCR Scan	PDF
1N415C Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494 Text: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3	OCR Scan	PDF	1N21F. 1N26C A490D A490E. A490G. A492D MA494 MA494B A494C A494D 1N415C "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
1N8284 Abstract: 1N930B 1N8313 1N8311 1N526B 1n9303 Text: MILITARY APPROVED 1N5283 thru Current Regulator Reid Effect Diodes 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • Available a s JAN, JANfX, JAN-TX-v thru M ax • Current Constant Over Wide Voltage Range • High Source Impedance	OCR Scan	PDF	1N5283 1N5314 1N5283-1N5290) 1N529 -1N5314) 1N8284 1N930B 1N8313 1N8311 1N526B 1n9303
1N23 diode Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local	OCR Scan	PDF
IN23C Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff\|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR
1N23 diode Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for	OCR Scan	PDF	1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	PDF	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

MIS us army Abstract: ltsx 1N831A 1N831 Text: « « -T T n 1 A F * A A f n P C% / T ’ T \ I V l l l v - ö - I V ^ U U / ¿D Z ü iL . 25 MARCH 1966 MILITARY SPECIFICATION c rr iM r r n \ m T ì p t a dI I nJ - T rA \J 7Y il Vr ii U? i T l l L i V l ^ J L / U \ j 1 V O ^ T ìT A T ìT ? J L /X V J L /U j	OCR Scan	PDF	1N831A MIL-S-19500 MIS us army ltsx 1N831A 1N831
1N23C Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132 Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf\| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:	OCR Scan	PDF
1N21 Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26 Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di odes by basic construction, package style and frequency band. Type	OCR Scan	PDF	1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26
1N21* Diode Detector Holder Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description	OCR Scan	PDF
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	PDF	DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR
in23c Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
1N23 diode Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure	OCR Scan	PDF

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1N831 Datasheets (29)

1N831 Datasheets Context Search

Microwave Mixer Diodes

1N831

cp4071

1N831

c5088 transistor

Untitled

JAN1N23WG

1N415C

1N8284

1N23 diode

IN23C

1N23 diode

MC2259

transistor c2060

MIS us army

1N23C

1N21

1N21* Diode Detector Holder

1N23C diode

in23c

1N23 diode