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    1N914 DIE Search Results

    1N914 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    1N914 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LT150633

    Abstract: LT1506s 330nF capacitor EFFECTIVE marcon capacitor RB051L-40 1N914 DO3316P-682 LT1374 LT1506 MBRS330T3
    Text: DESIGN FEATURES Fixed Frequency, 500kHz, 4.5A Step-Down Converter in an SO-8 Operates from a 5V Input by Karl Edwards D2 1N914 Introduction 5V to 3.3V Buck Converter The circuit in Figure 1 is a step-down converter suitable for use as a local regulator to supply 3.3V logic from a


    Original     		500kHz, 1N914 225kHz LTC1625 LT150633 LT1506s 330nF capacitor EFFECTIVE marcon capacitor RB051L-40 1N914 DO3316P-682 LT1374 LT1506 MBRS330T3 PDF

    jx4148

    Abstract: J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


    Original     		MIL-PRF-19500/116L MIL-PRF-19500/116K 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, jx4148 J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1 PDF

    ne555 vco

    Abstract: how to convert 220v ac to 12v dc 220v DC MOTOR SPEED CONTROL USING ic regulator ic 555 timer gate drive scr AC OVERload PROTECTION CIRCUIT 555 timer DC motor speed control using 555 timer and mosfet ne555 220v dc motor 220V speed control with scr normal relay for controlling 230v ac by using 5v AN9318
    Text: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note An IGT’s few input requirements and low On-state resistance simplify drive circuitry and increase power efficiency in motorcontrol applications. The voltage-controlled, MOSFET-like


    Original     		PDF

    bistable multivibrator using ic 555

    Abstract: dc 220v motor speed control circuit with scr 12v dc 220v ac inverter circuit schematic diagram 555 Timer Voltage-Controlled Oscillator Circuit D 24V to 220V inverter schematic diagram motor schematic diagram inverter 24V to 3 PHASE how to control output voltage by using chip sg3524 DC motor speed control using 555 timer and mosfet 12v to 230v inverters circuit diagrams SG3524 application notes speed control
    Text: Harris Semiconductor No. AN9318 Harris Power September 1993 Insulated-Gate Transistors Simplify AC-Motor Speed Control Authors: Marvin Smith, William Sahm and Sridhar Babu An IGT’s few input requirements and low On-state resistance simplify drive circuitry and increase power efficiency in motorcontrol applications. The voltage-controlled, MOSFET-like


    Original     		AN9318 A139P 1N914 PE-63385 D66EV7 A114A 1000pF D44D6 bistable multivibrator using ic 555 dc 220v motor speed control circuit with scr 12v dc 220v ac inverter circuit schematic diagram 555 Timer Voltage-Controlled Oscillator Circuit D 24V to 220V inverter schematic diagram motor schematic diagram inverter 24V to 3 PHASE how to control output voltage by using chip sg3524 DC motor speed control using 555 timer and mosfet 12v to 230v inverters circuit diagrams SG3524 application notes speed control PDF

    SG3524 application notes speed control

    Abstract: how to convert 220v ac to 12v dc DC motor speed control using 555 timer 12v DC motor speed control using scr PZT61343 dc 220v motor speed control circuit with scr dc shunt motor ne555 220v h bridge sg3524 sg3524 drive motor shutdown techniques
    Text: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note [ /Title AN93 18 /Subject (InsulatedGate Transistors Simplify ACMotor Speed Control) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Avalanche Energy Rated, Switch ing


    Original     		PDF

    1n4148 die

    Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
    Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 die DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip PDF

    SG3524 application notes speed control

    Abstract: how to convert 220v ac to 12v dc PZT61343 ne555 220v dc 220v motor speed control circuit with scr 220v AC MOTOR star capacitor circuit sg3524 drive motor sg3524 drive motor shutdown techniques 24v dc to 12v dc chopper transformer DC motor speed control using 555 timer
    Text: Insulated-Gate Transistors Simplify AC-Motor Speed Control Application Note /Title AN75 1 Subect In ulated Gate ran istors imlify Cotor peed onrol) Autho ) Keyords Interil orpoation, emionuctor, vaanche nergy ated, witch ng ower uplie , ower An IGT’s few input requirements and low On-state resistance


    Original     		PDF

    CMPD2836

    Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914 PDF

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448 PDF

    1n4148 die chip

    Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1n4148 die chip 1n4448 die chip CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE PDF

    1n4148 die chip

    Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
    Text: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1n4148 die chip 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B PDF

    diode S 335

    Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 diode S 335 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836 PDF

    1n4148

    Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
    Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448 PDF

    eprom 92112

    Abstract: SPRAGUE 11Z-2003 AN3030 MALLORY CAPACITOR CATALOG hp5082-2810 STANCOR 11Z-2003 pe-6197 2N4391 MOTOROLA P50N05E stancor rectifier transformer
    Text: Application Note 30 February 1989 Switching Regulator Circuit Collection John Seago Switching regulators are of universal interest. Linear Technology has made a major effort to address this topic. A catalog of circuits has been compiled so that a design engineer can swiftly determine which converter type is


    Original     		2N2222 1N4148 LT1072CN8 VN2222LL 2N3906 5V-35V LT317AH MBR1535 eprom 92112 SPRAGUE 11Z-2003 AN3030 MALLORY CAPACITOR CATALOG hp5082-2810 STANCOR 11Z-2003 pe-6197 2N4391 MOTOROLA P50N05E stancor rectifier transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: Final Electrical Specifications LT1765 Monolithic 3A, 1.25MHz Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1765 is a 1.25MHz monolithic buck switching regulator. A high efficiency 3A, 0.09Ω switch is included on the die together with all the control circuitry required


    Original     		LT1765 25MHz 100kHz 1765i PDF

    DG4030J

    Abstract: diode 30Vp
    Text: [ /Title IH515 1 /Subject (Dual SPDT, CMOS Analog Switch ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Dual SPDT, CMOS Analog Switch ) /Creator () /DOCI NFO pdfmark IH5151 CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT G4030J rD E S DataoSheet


    Original     		IH515 IH5151 G4030J HI1-5051 IH5151 DG4030J diode 30Vp PDF

    jx4148

    Abstract: JANS1N6642US JV4148 J4148 JANS1N4148UR-1 1N4148UBD JX414 DIODE 1n4148 DO-213AA 1N4148 JANS1N6638U
    Text: INCH-POUND MIL-PRF-19500/116R w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/116R w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UBCA, 1N4148UBCC, 1N4148UBCCC, 1N4148UBD, 1N4148UBCD, 1N4148UB2,


    Original     		MIL-PRF-19500/116R 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UBCA, 1N4148UBCC, 1N4148UBCCC, 1N4148UBD, 1N4148UBCD, jx4148 JANS1N6642US JV4148 J4148 JANS1N4148UR-1 1N4148UBD JX414 DIODE 1n4148 DO-213AA 1N4148 JANS1N6638U PDF

    1N4148

    Abstract: 1N914 HV833 HV833MG LM 1n4148 murata RSW connector
    Text: HV833 EL Lamp Driver Circuits HV833 Application Note AN-H45 HV833 EL Lamp Driver Circuits by Roshanak Aflatouni, Applications Engineer This application note presents six EL driver circuits utilizing the Supertex HV833 integrated circuit. They have been optimized


    Original     		HV833 HV833 AN-H45 AN-H33, 1N4148 1N914 HV833MG LM 1n4148 murata RSW connector PDF

    1N4148

    Abstract: 1N914 HV833 HV833MG HV833X TRANSISTOR REPLACEMENT GUIDE
    Text: HV833 HV833 Demo Kit Available High Voltage EL Lamp Driver Features General Description ❏ 1.8V to 6.5V operating supply voltage The Supertex HV833 is a high voltage driver designed for driving EL lamps of up to 35nF 10-12in2 . The input supply voltage range is from 1.8V to 6.5V. The device uses a single inductor and


    Original     		HV833 HV833 10-12in2) 100nA 09/05/02rev 1N4148 1N914 HV833MG HV833X TRANSISTOR REPLACEMENT GUIDE PDF

    C3107A

    Abstract: 140 Watt 110 Vdc square wave generator CD4011 oscillator CD4011 APPLICATIONS CMP04 CMP04FP CD4011 CMP04BY CMP04FS SN7400
    Text: a Quad Low Power, Precision Comparator CMP04 FEATURES High Gain: 200 V/mV typ Single or Dual Supply Operation Input Voltage Range Includes Ground Low Power Consumption 1.5 mW/Comparator Low Input Bias Current: 100 nA max Low Input Offset Current: 10 nA max


    Original     		CMP04 LM139/239/339 14-Lead C3107A 140 Watt 110 Vdc square wave generator CD4011 oscillator CD4011 APPLICATIONS CMP04 CMP04FP CD4011 CMP04BY CMP04FS SN7400 PDF

    1N4148

    Abstract: 1N914 HV833 HV833MG HV833X
    Text: HV833 HV833 Demo Kit Available High Voltage EL Lamp Driver Features General Description ❏ 1.8V to 6.5V operating supply voltage The Supertex HV833 is a high voltage driver designed for driving EL lamps of up to 35nF 10-12in2 . The input supply voltage range is from 1.8V to 6.5V. The device uses a single inductor and


    Original     		HV833 HV833 10-12in2) 100nA 05/02/02rev 1N4148 1N914 HV833MG HV833X PDF

    ca3109

    Abstract: ca3019 CA3140 voltage comparator application ca3140 application circuit IC CA3140 DATA SHEET CA3140S Harris CA3019 CA3140 IC CA3140 ca3109 diode array
    Text: CA3140, CA3140A Data Sheet July 2004 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a


    Original     		CA3140, CA3140A CA3140A CA3140 ca3109 ca3019 CA3140 voltage comparator application ca3140 application circuit IC CA3140 DATA SHEET CA3140S Harris CA3019 IC CA3140 ca3109 diode array PDF

    I1N4148-1

    Abstract: MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094
    Text: MIL SPECS 44E □ □□ □1 55 J> □ □ 3 5 M b cî 1 • MILS The documentation and process conversion \ measures necessary to comply with this | revision shall be completed b y ^ , INCH POUND MIL-S-19500/116J 23 Julv 1992 SUPERSEDING MI L- S - 1 9 5 0 0 / 1 1 6 H


    OCR Scan     		MIL-S-19500/116J MIL-S-19500/116H 1NA531 MIL-S-19500/578 JANS16642 1N914| 1N4531 MIL-S-19500/578. 1N4148-1 1N6638 I1N4148-1 MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094 PDF

    MSD700

    Abstract: MSD7000 1n3600 die
    Text: »Ë~|b3b7S55 | 6367255 □□ 3 0 1 1 4 MOTOROLA t. SC CD I O D E S / O P T O 34C 3811^ oj-o SILICON SWITCHING DIODE DIE continued) sr 1C914 DIE NO. UNE SOURCE — DSD241 This die provides performance equal to or better than that of the following device types:


    OCR Scan     		b3b7S55 DSD241 1N914 1N3600 MMD6050 MMD7000 MSD7000* 1C914 MSD700 MSD7000 1n3600 die PDF